TY - JOUR A1 - Mikulics, M. A1 - Camara, I. A1 - Hardt, A. van der A1 - Fox, A. A1 - Förster, Arnold A1 - Gusten, R. A1 - Lüth, H. A1 - Kordos, P. T1 - Generation of THz radiation by photomixing in low-temperature-grown MBE GaAs JF - Fifth International Conference on Advanced Semiconductor Devices and Microsystems : conference proceedings ; Smolenice Castle, Slovakia, October 17 - 21, 2004 / [organizers: Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by J. Osvald Y1 - 2004 SN - 0-7803-8335-7 N1 - International Conference on Advanced Semiconductor Devices and Microsystems <5, 2004, Smolenice> ; ASDAM <5, 2004, Smolenice> ; IEEE catalog numer: 04EX867 SP - 231 EP - 234 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Lentzen, M. A1 - Gerthsen, D. T1 - Growth mode and strain relaxation during the initial stage of InxGa1–xAs growth on GaAs(001) / M. Lentzen ; D. Gerthsen ; A. Förster ... JF - Applied physics letters. 60 (1992), H. 1 Y1 - 1992 SN - 0003-6951 N1 - ISSN der E-Ausg.: 1077-3118 SP - 74 EP - 76 ER - TY - JOUR A1 - Förster, Arnold A1 - Tillmann, K. A1 - Gerthsen, D. T1 - Growth morphology and misfit relaxation of MBE-grown In0.6 G0.4 As on GaAs(001) / K. Tillmann ; D. Gerthsen ; A. Förster ... JF - Thin solid films. 261 (1995), H. 1-2 Y1 - 1995 SN - 0040-6090 SP - 139 EP - 147 ER - TY - JOUR A1 - Förster, Arnold A1 - Klemradt, U. A1 - Funke, M. A1 - Fromm, M T1 - Growth-induced interface roughness of GaAs/AlAs-layers studied by X-ray scattering under grazing angles / U. Klemradt ; M. Funke ; M. Fromm ... A Förster JF - Physica B: condensed matter. 221 (1996), H. 1-4 Y1 - 1996 SN - 0921-4526 SP - 27 EP - 33 ER - TY - JOUR A1 - Förster, Arnold A1 - Betko, J. A1 - Morvic, M. A1 - Novak, J. T1 - Hall mobility analysis in low-temperature-grown molecular-beam epitaxial GaAs / J. Betko , M. Morvic ; J. Novák ... A. Förster ... JF - Applied physics letters. 69 (1996), H. 17 Y1 - 1996 SN - 0003-6951 N1 - ISSN der E-Ausg.: 1077-3118 SP - 2563 EP - 2565 ER - TY - JOUR A1 - Förster, Arnold A1 - Ohler, C. A1 - Daniels, C. T1 - Heterojunction band offsets and Schottky-barrier heights: Tersoff’s theory in the presence of strain / C. Ohler ; C. Daniels ; A. Förster ... JF - Physical review / B, Condensed matter and materials physics. 58 (1998), H. 12 Y1 - 1998 SN - 1095-3795 SP - 7864 EP - 7871 ER - TY - JOUR A1 - Förster, Arnold A1 - Montanari, Simone A1 - Lepsa, Mihail Ion A1 - Lüth, Hans T1 - High frequency investigation of graded gap injectors for GaAs Gunn diodes / Simone Montanari ; Arnold Förster ; Mihail Ion Lepsa ; Hans Lüth JF - Solid-state electronics. 49 (2005), H. 2 Y1 - 2005 SN - 0038-1101 SP - 245 EP - 250 ER - TY - JOUR A1 - Förster, Arnold A1 - Brugger, H. A1 - Meiners, U. T1 - High quality GaAs-based resonant tunneling diodes for high frequency device applications / H. Brugger ; U. Meiners ; C. Wölk ... A. Förster ... JF - Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman Y1 - 1991 SN - 0-7803-0491-8 N1 - Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits <1991, Ithaca, NY> SP - 39 EP - ff. PB - Inst. of Electrical and Electronics Engineers CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Hu, Quing A1 - Verghese, S. T1 - High-frequency (f ~ 1 THz) studies of quantum-effect devices / Qing Hu ; S. Verghese ; R. A. Wyss ... A. Förster JF - Semiconductor science and technology. 11 (1996), H. 12 Y1 - 1996 SN - 1361-6641 SP - 1888 EP - 1894 ER - TY - JOUR A1 - Förster, Arnold A1 - Malindretos, Jörg A1 - Indlekofer, Klaus Michael A1 - Lepsa, Mihail Ion T1 - Homogeneity analysis of ion-implanted resonant tunnelling diodes for applications in digital logic circuits. Malindretos, Jörg; Förster, Arno; Indlekofer, Klaus Michael; Lepsa, Mihail Ion; Hardtdegen, Hilde; Schmidt, Roland; Luth, Hans JF - Superlattices and Microstructures. 31 (2002), H. 6 Y1 - 2002 SN - 0749-6036 SP - 315 EP - 325 ER -