TY  - JOUR
A1  - Förster, Arnold
A1  - Resch, U.
A1  - Scholz, S. M.
T1  - Thermal desorption of amorphous arsenic caps from GaAs(100) monitored by reflection anisotropy spectroscopy / U. Resch ; S. M. Scholz ;  U. Rossow ... A. Förter ...
JF  - Applied Surface Science. 63 (1993), H. 1-4
Y1  - 1993
SN  - 0169-4332
N1  - ISSN der E-Ausg.: 0169-4332
SP  - 106
EP  - 110
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Darmo, J.
A1  - Schafer, F.
A1  - Kordos, P.
T1  - Thermal resistance of the semiconductor structures for a photomixing device. Darmo, J.; Schafer, F.; Forster, A.; Kordos, P.; Gusten, R
JF  - Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza
Y1  - 2002
SN  - 0-7803-7276-X
N1  - International Conference on Advanced Semiconductor Devices and Microsystems ; (4, 2002, Smolenice). ASDAM '02 ; (4 : ; 2002.10.14-16 : ; Smolenice)
SP  - 87
EP  - 90
PB  - IEEE Operations Center
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Griebel, M.
A1  - Indlekofer, K. M.
A1  - Lüth, H.
T1  - Transport properties of gated resonant tunneling diodes in the single electron regime. Griebel, M.; Indlekofer,  K. M.; Förster, A.; Lüth, H.
JF  - Journal of Applied Physics. 84 (1998), H. 12
Y1  - 1998
SN  - 1089-7550
SP  - 6719
EP  - 6724
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Griebel, M.
A1  - Indlekofer, M.
A1  - Lüth, H.
T1  - Transport through a buried double barrier single electron transistor at low temperatures
JF  - Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4
Y1  - 1998
SN  - 1386-9477
SP  - 502
EP  - 506
ER  - 
TY  - JOUR
A1  - Vitusevich, S. A.
A1  - Förster, Arnold
A1  - Indlekofer, K.-M.
A1  - Lüth, H.
A1  - Belyaev, A. E.
A1  - Glavin, B. A.
A1  - Konakova, R. V.
T1  - Tunneling Through X-Valley-Related Impurity States in GaAs/AlAs Resonant-Tunneling Diodes
JF  - Physical  Review . B. 61 (2000), H. 16
Y1  - 2000
SN  - 1550-235X
SP  - 10898
EP  - 10904
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Mikulics, M.
A1  - Wu, S.
A1  - Marso, M.
T1  - Ultrafast and Highly Sensitive Photodetectors With Recessed Electrodes Fabricated on Low-Temperature-Grown GaAs. Mikulics, M.; Wu, S.; Marso, M.; Adam, R.; Förster, A.; van der Hart, A.; Kordos, P.; Lüth, H.; Sobolewski, R.
JF  - IEEE Photonics Technology Letters. 18 (2006), H. 7
Y1  - 2006
SP  - 820
EP  - 822
ER  - 
TY  - JOUR
A1  - Mikulics, M.
A1  - Adam, R.
A1  - Kordos, P.
A1  - Förster, Arnold
A1  - Lüth, H.
A1  - Wu, S.
A1  - Zheng, X.
A1  - Sobolewski, R.
T1  - Ultrafast low-temperature-grown epitaxial GaAs photodetectors transferred on flexible plastic substrates
JF  - IEEE photonics technology letters : IEEE PTL. 17 (2005), H. 8
Y1  - 2005
SN  - 1041-1135
SP  - 1725
EP  - 1727
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Marso, M.
A1  - Mikulics, V. V.
A1  - Adam, R.
T1  - Ultrafast Phenomena in Freestanding LT-GaAs Devices. Marso, M.; Mikulics, V. V.; Adam, R.; Wu, S.; Zheng, X.; Camara, I.; Siebe, N. Y.; Förster, A.; Güsten, R.; Kordos, P.; Sobolewski, R.
JF  - Acta physica Polonica / A. 107 (2005), H. 1
Y1  - 2005
SN  - 0587-4246
SP  - 109
EP  - 117
ER  - 
TY  - JOUR
A1  - Förster, Arnold
T1  - Ultrahigh frequency measurements of magnetic penetration length and surface impedance of YBa2Cu3O7–x microstriplines on Si and GaAs substrates . Rüders, F; Hollricher, O.;  Copetti, C. A. ; Förster,  A. ; Buchal, Ch. ; Prusseit, W.  ; Kinder, H.
JF  - Journal of Applied Physics. 77 (1995), H. 10
Y1  - 1995
SN  - 1089-7550
SP  - 5282
EP  - 5286
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Malzer, S.
A1  - Heber, J.
A1  - Peter, M.
T1  - Vertical transport and relaxation mechanisms in d-doping superlattices. Malzer, S.; Heber, J.; Peter, M.; Eckl, S.; Elpelt, R.; Doehler, G. H.; Förster, A.; Lüth, H.
JF  - Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4
Y1  - 1998
SN  - 1386-9477
SP  - 349
EP  - 352
ER  -