TY  - JOUR
A1  - Hagemann, Hans-Jürgen
A1  - Ihrig, H.
T1  - Valence change and phase stability of 3d-doped BaTiO3 annealed in oxygen and hydrogen. Hagemann, H. J.; Ihrig, H.
JF  - Physical Review B.. 20 (1979), H. 9
Y1  - 1979
SN  - 1095-3795
SP  - 3871
EP  - 3878
ER  - 
TY  - JOUR
A1  - Hagemann, Hans-Jürgen
A1  - Bachmann, P. K.
A1  - Lade, H.
A1  - Leers, D.
T1  - Thermal properties of C/H-, C/H/O-, C/H/N- and C/H/X-grown polycrystalline CVD diamond. P. K. Bachmann, H. J. Hagemann, H. Lade,  ...
JF  - Diamond and Related Material. Vol 4. (1995), H. Issue 5-6
Y1  - 1995
N1  - <a href="http://dx.doi.org/10.1016/0925-9635(94)05229-8">abstract online:</a>
SP  - 820
EP  - 826
PB  - Elsevier Science
CY  - New York, NY [u.a.]
ER  - 
TY  - JOUR
A1  - Hagemann, Hans-Jürgen
A1  - Hero, A.
A1  - Gonser, U.
T1  - The valence change of Fe in BaTiO3 studied by Mößbauer effect and gravimetry. Hagemann, H. J.; Hero, A.; Gonser, U.
JF  - Physica Status Solidi (A) - Applied Research. 61 (1980)
Y1  - 1980
SN  - 0031-8965
SP  - 63
EP  - 72
ER  - 
TY  - JOUR
A1  - Hagemann, Hans-Jürgen
A1  - Lade, H.
A1  - Warnier, J.
A1  - Wiechert, D. U.
T1  - The performance of Depressed-Cladding Single-Mode Fibres with Different b/a Ratios. Hagemann, H.-J.; Lade, H.; Warnier, J.; Wiechert, D. U.
JF  - Journal of Lightwave Technology (J-LT) / Institute of Electrical and Electronics Engineers (IEEE). 9 (1991), H. 6
Y1  - 1991
SN  - 0733-8724
SP  - 689
EP  - 694
ER  - 
TY  - JOUR
A1  - Hagemann, Hans-Jürgen
A1  - Stumpe, R.
A1  - Wagner, D.
A1  - Bäuerle, D.
T1  - The influence of contact effects on the dielectric behavior of diffuse phase transitions. Stumpe, R.; Wagner, D.; Bäuerle, D.; Hagemann, H. J.
JF  - Ferroelectrics : the international journal devoted to the theoretical, experimental, and applied aspects of ferroelectrics and related materials / Letters section. 4 (1985)
Y1  - 1985
SN  - 0731-5171
SP  - 143
EP  - 147
ER  - 
TY  - JOUR
A1  - Hagemann, Hans-Jürgen
T1  - Störstellengleichgewichte in eisendotierten Titanaten. Hagemann, H. J.
JF  - Philips - Unsere Forschung in Deutschland / Hrsg.: Philips Forschungslaboratorium GmbH Aachen und Hamburg. 4 (1989)
Y1  - 1989
SP  - 170
EP  - 172
ER  - 
TY  - JOUR
A1  - Hagemann, Hans-Jürgen
A1  - Hennings, D.
T1  - Reversible Weight change of acceptor-doped BaTiO3. Hagemann, H. J.; Hennings, D.
JF  - Journal of the American Ceramic Society. 64 (1981)
Y1  - 1981
SN  - 0002-7820
SP  - 590
EP  - 594
ER  - 
TY  - JOUR
A1  - Hagemann, Hans-Jürgen
T1  - Reduction of hysteresis losses of ferroelectric BaTiO3. Hagemann, H. J.
JF  - Ferroelectrics. 22 (1978)
Y1  - 1978
SN  - 0015-0193
SP  - 743
EP  - 743
ER  - 
TY  - JOUR
A1  - Hagemann, Hans-Jürgen
A1  - Geittner, P.
A1  - Warnier, J.
A1  - Weling, F.
T1  - Reduction of geometric taper losses in the PCVD process. Geittner, P.; Hagemann, H. J.; Warnier, J.; Weling, F.; Wilson, H.
JF  - Electronics letters : an intern. publication / The Institution of Electrical Engineers. 21 (1985), H. 13
Y1  - 1985
SN  - 0013-5194
SP  - 870
EP  - 871
ER  - 
TY  - JOUR
A1  - Hagemann, Hans-Jürgen
A1  - Gudat, W.
A1  - Kunz, C.
T1  - Photoabsorption of alloys of Al with transition metals V, Fe, Ni and Cu and Pr near the Al L₂,₃-edge
JF  - Solid State Communications
N2  - The onset of Al 2p transitions of VAl₃, FeAl, NiAl, NiAl₃, CuAl₂, PrAl₂ and the disordered alloys V-Al (16 at % Al, 28%, 41%), Fe-Al (11%) is shifted up to 1.1 eV. New pronounced structure develops close to the onset which for NiAl agrees with a density of states calculation by Connolly and Johnson.
Y1  - 1974
SN  - 0038-1098
U6  - http://dx.doi.org/10.1016/0038-1098(74)91165-X
VL  - 15
IS  - 3
SP  - 655
EP  - 658
PB  - Elsevier
CY  - Amsterdam
ER  -