TY  - CHAP
A1  - Gligorevic, Snjezana
A1  - Epple, Ulrich
A1  - Schnell, Michael
T1  - The LDACS1 physical layer design
T2  - Future aeronautical communications
Y1  - 2011
SN  - 978-953-307-625-6
SP  - 317
EP  - 332
PB  - Intech
CY  - London
ER  - 
TY  - JOUR
A1  - Faßbender, Heinz
A1  - Bühler, Gerhard
T1  - The join of a geographical situation display system and a platform independent C2 information system
JF  - Proceedings of the 2000 Command and Control Research and Technology Symposium, Juni 2000, Monterey, USA
Y1  - 2000
SP  - 1
EP  - 7
ER  - 
TY  - JOUR
A1  - Ferrein, Alexander
A1  - Steinbauer, Gerald
T1  - The Interplay of Aldebaran and RoboCup
JF  - KI - Künstliche Intelligenz
Y1  - 2016
U6  - http://dx.doi.org/10.1007/s13218-016-0440-1
SN  - 1610-1987
VL  - 30
IS  - 3-4
SP  - 325
EP  - 326
PB  - Springer
CY  - Berlin
ER  - 
TY  - THES
A1  - Bragard, Michael
T1  - The integrated emitter turn-off thyristor : an innovative MOS-gated high-power device. - (Aachener Beiträge des ISEA ; 62)
N2  - This thesis introduces the Integrated Emitter Turn-Off (IETO) Thyristor as a new high-power device. Known state-of-the-art research activities like the Dual GCT, the ETO thyristor and the ICT were presented and critically reviewed. A comparison with commercialized solutions identifies the pros and cons of each type of device family. Based on this analysis, the IETO structure is proposed, covering most benefits of each device class. In particular the combination of a MOS-assisted turn-off with a thyristor-based device allows a voltage-controlled MOS switching and the low on-state voltage of the thyristors. The following synthesis of an IETO device stands on a three-dimensional field of optimization spanned by electric, mechanical and thermal aspects. From an electric point of view, the lowest possible parasitic inductance and resistance within the commutation path are optimization criteria. The mechanical construction has to withstand the required contact pressure of multiple kilo Newtons. Finally, thermal borders limit the maximum average current of the device. FEM simulations covering these three aspects are performed for several design proposals. An IETO prototype is constructed and measurements on various test benches attest thermal, mechanical and electric performance. A local decoupling of the external driver stage and the presspack housing is presented by a cable connection. This separation enables a thermal and mechanical independence, which is advantageous in terms of vibrations and thermal cycles including increased reliability. The electric pulse performance of the prototype device is a factor of 3.1 above today''s solutions. In single-pulse measurements, a current up to 1600 A was successfully turned off at 115°C with an active silicon area of 823 mm². One reason for this increased turn-off capability is the extremely low-inductive construction. Additional functionality of the IETO thyristor like over-current self-protection and defined short-circuit failure state are successfully verified.
Y1  - 2012
SN  - 978-3-8440-1152-4
N1  - Zugl.: Aachen, Techn. Hochsch., Diss., 2012
PB  - Shaker
CY  - Aachen
ER  - 
TY  - JOUR
A1  - Bragard, Michael
A1  - Conrad, M.
A1  - van Hoek, H.
A1  - De Doncker, R. W.
T1  - The integrated emitter turn-off thyristor (IETO) : an innovative thyristor-based high power semiconductor device using MOS assisted turn-off
JF  - IEEE transactions on industry applications
Y1  - 2011
U6  - http://dx.doi.org/10.1109/TIA.2011.2161432
SN  - 0093-9994
VL  - 47
IS  - 5
SP  - 2175
EP  - 2182
PB  - IEEE
CY  - New York
ER  - 
TY  - CHAP
A1  - Bragard, Michael
A1  - Conrad, M.
A1  - De Doncker, R. W.
T1  - The integrated emitter turn-off thyristor (IETO) : an innovative thyristor based high power semiconductor device using MOS assisted turn-off
T2  - 2010 IEEE Energy Conversion Congress and Exposition (ECCE 2010) : Atlanta, Georgia, USA, 12 - 16 September 2010 / [sponsored by the IEEE Power Electronics and Industry Applications Societies]
Y1  - 2010
SN  - 978-1-4244-5286-6 (Print)
SN  - 978-1-4244-5287-3 (Online)
U6  - http://dx.doi.org/10.1109/ECCE.2010.5618410
SP  - 4551
EP  - 4557
PB  - IEEE
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Hagemann, Hans-Jürgen
A1  - Stumpe, R.
A1  - Wagner, D.
A1  - Bäuerle, D.
T1  - The influence of contact effects on the dielectric behavior of diffuse phase transitions. Stumpe, R.; Wagner, D.; Bäuerle, D.; Hagemann, H. J.
JF  - Ferroelectrics : the international journal devoted to the theoretical, experimental, and applied aspects of ferroelectrics and related materials / Letters section. 4 (1985)
Y1  - 1985
SN  - 0731-5171
SP  - 143
EP  - 147
ER  - 
TY  - JOUR
A1  - Heuermann, Holger
A1  - Schiek, Burkhard
T1  - The In-Fixture Calibration Procedure Line-Network-Network-LNN
JF  - Conference proceedings : monday 6th to thursday 9th september 1993, Palacio de Congresos, Madrid, Spain ; [the international conference and exhibition designed for the Microwave Community]
Y1  - 1992
SN  - 0-946821-23-2
N1  - European Microwave Conference <23, 1993, Madrid>
SP  - 500
EP  - 505
PB  - Reed Exhibition Companies
CY  - Tunbridge Wells
ER  - 
TY  - BOOK
A1  - Hüning, Felix
T1  - The fundamentals of electrical engineering for mechatronics
Y1  - 2014
SN  - 978-3-11-034991-7 (Druckausg.)
SN  - 978-3-11-030840-2 (E-Book)
PB  - de Gruyter
CY  - Berlin
ER  - 
TY  - CHAP
A1  - Wolf, Martin
A1  - Lenz, Laura L.
T1  - The economic effectiveness of serious games in the healthcare environment : application and evaluation of the Comparative Transformation Model (CTM)
T2  - IEEE 3rd International Conference on Serious Games and Applications for Health : SeGAH 2014 ; Rio de Janeiro, Brazil, May 14 - 16
Y1  - 2015
SN  - 978-1-4799-4823-9
U6  - http://dx.doi.org/10.1109/SeGAH.2014.7067089
SP  - 135
EP  - 142
PB  - IEEE [u.a.]
CY  - Piscataway, NJ
ER  -