TY - CHAP A1 - Köllensperger, P. A1 - Bragard, Michael A1 - Plum, T. A1 - De Doncker, R. W. T1 - The dual GCT : a new high-power device using optimized GCT technology T2 - Conference record of the 2007 IEEE Industry Applications Conference : 42. IAS annual meeting ; September 23 - 27, 2007, New Orleans, Louisiana, USA Y1 - 2007 SN - 978-1-4244-1260-0 (Online) SN - 978-1-4244-1259-4 (Print) U6 - http://dx.doi.org/10.1109/07IAS.2007.76 SP - 358 EP - 365 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - PAT A1 - Bragard, Michael A1 - Budde, W. O. A1 - Hente, D. A1 - Jacobs, J. H. A. M. A1 - Waffenschmidt, E. T1 - Lighting system : [patent of invention] T1 - Beleuchtungssystem : [Patentschrift] Y1 - 2008 N1 - Außerdem veröffentlicht als: TW200817630 (A), TWI402458 (B), RU2009106047 (A), RU2440636 (C2), KR20090042806 (A), KR101423467 (B1), JP2009545103 (A), JP5265540 (B2), CN101490772 (A) und CN101490772 (B) PB - WIPO / United States Patent and Trademark Office CY - Geneva / Alexandria, VA ER - TY - JOUR A1 - Köllensperger, P. A1 - Bragard, Michael A1 - Plum, T. A1 - De Doncker, R. W. T1 - The dual GCT : new high-power device using optimized GCT technology JF - IEEE transactions on industry applications Y1 - 2009 U6 - http://dx.doi.org/10.1109/TIA.2009.2027364 SN - 0093-9994 VL - 45 IS - 5 SP - 1754 EP - 1762 ER - TY - CHAP A1 - Bragard, Michael A1 - Soltau, N. A1 - De Doncker, R. W. A1 - Schmiegel, A. T1 - Design and implementation of a 5 kW photovoltaic system with li-ion battery and additional DC-DC converter T2 - 2010 IEEE Energy Conversion Congress and Exposition (ECCE 2010) : Atlanta, Georgia, USA, 12 - 16 September 2010 / [sponsored by the IEEE Power Electronics and Industry Applications Societies] Y1 - 2010 SN - 978-1-4244-5286-6 (Print) SN - 978-1-4244-5287-3 (Online) U6 - http://dx.doi.org/10.1109/ECCE.2010.5618220 SP - 2944 EP - 2949 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Bragard, Michael A1 - Conrad, M. A1 - De Doncker, R. W. T1 - The integrated emitter turn-off thyristor (IETO) : an innovative thyristor based high power semiconductor device using MOS assisted turn-off T2 - 2010 IEEE Energy Conversion Congress and Exposition (ECCE 2010) : Atlanta, Georgia, USA, 12 - 16 September 2010 / [sponsored by the IEEE Power Electronics and Industry Applications Societies] Y1 - 2010 SN - 978-1-4244-5286-6 (Print) SN - 978-1-4244-5287-3 (Online) U6 - http://dx.doi.org/10.1109/ECCE.2010.5618410 SP - 4551 EP - 4557 PB - IEEE CY - Piscataway, NJ ER - TY - JOUR A1 - Bragard, Michael A1 - Soltau, N. A1 - Thomas, S. A1 - De Doncker, R. W. T1 - The balance of renewable sources and user demands in grids : power electronics for modular battery energy storage systems JF - IEEE transactions on power electronics N2 - The continuously growing amount of renewable sources starts compromising the stability of electrical grids. Contradictory to fossil fuel power plants, energy production of wind and photovoltaic (PV) energy is fluctuating. Although predictions have significantly improved, an outage of multi-MW offshore wind farms poses a challenging problem. One solution could be the integration of storage systems in the grid. After a short overview, this paper focuses on two exemplary battery storage systems, including the required power electronics. The grid integration, as well as the optimal usage of volatile energy reserves, is presented for a 5- kW PV system for home application, as well as for a 100- MW medium-voltage system, intended for wind farm usage. The efficiency and cost of topologies are investigated as a key parameter for large-scale integration of renewable power at medium- and low-voltage. Y1 - 2010 U6 - http://dx.doi.org/10.1109/TPEL.2010.2085455 SN - 0885-8993 VL - 25 IS - 12 SP - 3049 EP - 3056 PB - IEEE CY - New York ER - TY - CHAP A1 - Bragard, Michael A1 - Ronge, C. A1 - De Doncker, R. W. T1 - Sandwich design of high-power thyristor based devices with integrated MOSFET structure T2 - Proceedings of the 2011 - 14th - European Conference on Power Electronics and Applications (EPE 2011) : Aug. 30, 2011 - Sept. 1, 2011, Birmingham, United Kingdom Y1 - 2011 SN - 978-1-61284-167-0 (Print) SN - 978-90-75815-15-3 (Online) PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Bragard, Michael A1 - Gottschlich, J. A1 - De Doncker, R. W. T1 - Design and realization of a credit card size driver stage for high power thyristor based devices with integrated MOS structure T2 - 2011 IEEE 8th International Conference on Power Electronics and ECCE Asia (ICPE & ECCE 2011) : Jeju, South Korea, 30 May 2011 - 3 June 2011 / [co-sponsored by the Korean Institute of Power Electronics ...] Y1 - 2011 SN - 978-1-61284-958-4 (Print) SN - 978-1-61284-956-0 (Online) U6 - http://dx.doi.org/10.1109/ICPE.2011.5944661 SP - 1182 EP - 1189 PB - IEEE CY - Piscataway, NJ ER - TY - JOUR A1 - Bragard, Michael A1 - Conrad, M. A1 - van Hoek, H. A1 - De Doncker, R. W. T1 - The integrated emitter turn-off thyristor (IETO) : an innovative thyristor-based high power semiconductor device using MOS assisted turn-off JF - IEEE transactions on industry applications Y1 - 2011 U6 - http://dx.doi.org/10.1109/TIA.2011.2161432 SN - 0093-9994 VL - 47 IS - 5 SP - 2175 EP - 2182 PB - IEEE CY - New York ER - TY - JOUR A1 - Bragard, Michael A1 - van Hoek, H. A1 - De Doncker, R. W. T1 - A major design step in IETO concept realization that allows overcurrent protection and pushes limits of switching performance JF - IEEE transactions on power electronics N2 - This paper presents the latest prototype of the integrated emitter turn-off thyristor concept, which potentially ranks among thyristor high-power devices like the gate turn-off thyristor and the integrated gate-commutated thyristor (IGCT). Due to modifications of the external driver stage and mechanical press-pack design optimization, this prototype allows for full device characterization. The turn-off capability was increased to 1600 A with an active silicon area of 823mm2 . This leads to a transient peak power of 672.1kW/cm² . Within this paper, measurements and concept assessment are presented and a comparison to state-of-the-art IGCT devices is provided. Y1 - 2012 U6 - http://dx.doi.org/10.1109/TPEL.2012.2189136 SN - 0885-8993 VL - 27 IS - 9 SP - 4163 EP - 4171 PB - IEEE CY - New York ER -