TY  - JOUR
A1  - Förster, Arnold
A1  - Dekorsy, T.
A1  - Kim, A. T. M.
T1  - Subpicosecond coherent carrier-phonon dynamics in semiconductor heterostructures / T. Dekorsy ; A. M. T. Kim ; G. C. Cho ... A. Förster
JF  - Physical review / B, Condensed matter and materials physics. 53 (1996), H. 3
Y1  - 1996
SN  - 1095-3795
SP  - 1531
EP  - 1538
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Dieker, C.
A1  - Gerthsen, D.
T1  - Microstructure of the AlAs/GaAs and AlAs/InGaAs resonant tunneling diodes and its correlation with the electrical properties / C. Dieker ; D. Gerthsen ; A. Förster ...
JF  - Microscopy of semiconducting materials 1993 : proceedings of the Royal Microscopical Society Conference held at Oxford University, 5 - 8 April 1993 / ed. by A. G. Cullis ... - (Conference series / Institute of Physics ; 134)
Y1  - 1993
SN  - 0-7503-0290-9
N1  - Royal Microscopical Society Conference on Microscopy of Semiconducting Materials <8, 1993, Oxford> ; MSM <8, 1993, Oxford>
SP  - 253
EP  - ff.
PB  - Institute of Physics
CY  - Bristol [u.a.]
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Dubecky, F..
A1  - Darmo, J.
T1  - Investigation of deep-level states in bulk and low temperature MBE semiinsulating GaAs by admittance transient spectroscopy /  F. Dubecky ; J. Darmo ; M. Darviras ; A. Förster ...
JF  - Semi-insulating III-V materials, Ixtapa, Mexico 1992 : proceedings of the 7th Conference on Semi-insulating III-V Materials, Ixtapa, Mexico, 21 - 24 April 1992 / ed. by C. J. Miner ...
Y1  - 1994
SN  - 0-7503-0242-9
N1  - Conference on Semi-Insulating III-V Materials <7, 1992, Ixtapa>
SP  - 265
EP  - 272
PB  - Inst. of Physics Publ.
CY  - Bristol [u.a.]
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Döhler, G. H
A1  - Heber, J.
T1  - Hot electrons in n-i-p.i-based devices / G. H. Döhler ; J. Heber ... A. Förster ...
JF  - Hot electrons in semiconductors : physics and devices / ed. by N. Balkan. - (Series on semiconductor science and technology ; 5)
Y1  - 1998
SN  - 0-19-850058-0
SP  - 478
EP  - 504
PB  - Clarendon Press
CY  - Oxford
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Griebel, M.
A1  - Indlekofer, K. M.
A1  - Lüth, H.
T1  - Transport properties of gated resonant tunneling diodes in the single electron regime. Griebel, M.; Indlekofer,  K. M.; Förster, A.; Lüth, H.
JF  - Journal of Applied Physics. 84 (1998), H. 12
Y1  - 1998
SN  - 1089-7550
SP  - 6719
EP  - 6724
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Griebel, M.
A1  - Indlekofer, K.M.
A1  - Lüth, H.
T1  - Single electron transport in resonant tunnelling diodes laterally confined by ion implantation. Griebel, M.; Indlekofer, K.M.; Förster, A.; Lüth, H.
JF  - Journal of  Physics D: Applied  Physics. 32 (1999), H. 14
Y1  - 1999
SN  - 1361-6463
SP  - 1729
EP  - 1733
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Griebel, M.
A1  - Indlekofer, M.
A1  - Lüth, H.
T1  - Transport through a buried double barrier single electron transistor at low temperatures
JF  - Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4
Y1  - 1998
SN  - 1386-9477
SP  - 502
EP  - 506
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Hardtdegen, Hilde
A1  - Ungermanns, C.
T1  - Comparative investigation of electrical and optical characteristics of AlxGa1-xAs/GaAs structures deposited by LP-MOVPE and MBE / H. Hardtdegen ; M. Hollfelder ; C. Ungermanns ... A. Förster ...
JF  - Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141)
Y1  - 1995
SN  - 0-7503-0226-7
N1  - International Symposium on Compound Semiconductors <21, 1994, San Diego, Calif.> ;  Institute of Physics <London>
SP  - 81
EP  - ff.
PB  - Institute of Physics
CY  - Bristol [u.a.]
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Hartmann, A.
A1  - Dieker, Ch.
A1  - Hollfelder, M.
T1  - Spontaneous formation of tilted AlGaAS/GaAs superlattice during AlGaAs growth. Hartmann, A.; Dieker, Ch.; Hollfelder, M.; Hardtdegen, H.; Förster, A.; Lüth, H.
JF  - Applied Surface Science. 123-124 (1998)
Y1  - 1998
SN  - 0169-4332
N1  - = Proceedings of the Sixth International Conference on the Formation of Semiconductor Interfaces
SP  - 704
EP  - 709
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Hauke, M.
A1  - Jakumeit, J.
A1  - Krafft, B.
T1  - DX Centers in Al0.3Ga0.7As/GaAs Analyzed by Point Contact Measurements. Hauke, M.; Jakumeit, J.; Krafft, B.; Nimtz, G.; Förster, A.; Lüth, H.
JF  - Journal of Applied Physics. 84 (1998), H. 4
Y1  - 1998
SN  - 1089-7550
SP  - 2034
EP  - 2039
ER  -