TY - JOUR A1 - Förster, Arnold A1 - Zamdmer, N. A1 - Hu, Qing A1 - McIntosh, K. A. T1 - On-chip frequency domain submillimeter-wave transceiver. Zamdmer, N.; Hu, Qing ; McIntosh K. A. ; Verghise, S. ; Förster, A. JF - Applied Physics Letters. 75 (1999), H. 24 Y1 - 1999 SN - 1077-3118 SP - 3877 EP - 3879 ER - TY - JOUR A1 - Förster, Arnold A1 - Wensorra, J. A1 - Indlekofer, K. M. A1 - Lüth, H. T1 - Resonant tunneling in nanocolumns improved by quantum collimation. Wensorra, J.; Indlekofer, K. M.; Förster, A.; Lüth, H. JF - Nano Letters. 5 (2005) Y1 - 2005 SN - 0587-4246 SP - 2470 EP - 2475 ER - TY - JOUR A1 - Förster, Arnold A1 - Vitusevich, S. A. A1 - Belyaev, B. A. T1 - Intrinsic bistability effect in delta doped tunneling diodes / S. A. Vitusevich ; A. Förster ; B. A. Belyaev ... JF - Proceedings of the XXVIII International School on Physics of Semiconducting Compounds : Jaszowiec, Poland, June 6 - 11, 1999 / Polish Academy of Sciences, Institute of Physics. Ed. of the proceedings Wojciech Szuszkiewicz Y1 - 1999 N1 - International School on Physics of Semiconducting Compounds <28, 1999, Jaszowiec> ; Acta physica Polonica : A ; 96, no. 5 CY - Warsaw ER - TY - JOUR A1 - Förster, Arnold A1 - Vitusevich, S. A. A1 - Belyaev, A. E. A1 - Sheka, D. I. T1 - Resonant tunneling effect in a periodically modulated electrical field. Vitusevich, S.A.; Forster, A.; Belyaev, A.E.; Sheka, D.I.; Luth, H.; Klein, N.; Danylyuk, S.V.; Konakova, R. JF - Proceedings of the Tenth International Conference on Modulated Semiconductor Structures : held at the Johannes Kepler University, Linz, Austria, July 23 - 27, 2001 / MSS 10. Guest ed.: Günther Bauer ... Y1 - 2002 N1 - International Conference on Modulated Semiconductor Structures ; (10, 2001, Linz). Zugleich: Physica E: Low-dimensional Systems and Nanostructures. 13(2002)2-4. ISSN 1386-9477 SP - 811 EP - 813 PB - Elsevier CY - Amsterdam [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Vitusevich, S. A. A1 - Belyaev, A. E. A1 - Indlekofer, K. M. T1 - Resonant tunneling effect in delta p-n GaAs junction. Vitusevich, S. A.; Förster, A.; Belyaev, A. E.; Indlekofer, K. M.; Lüth, H.; Konakova, R. V. JF - Microelectronic Engineering. 46 (1999), H. 1-4 Y1 - 1999 SN - 0167-9317 N1 - International Conference on Micro- and Nanofabrication SP - 169 EP - 172 ER - TY - JOUR A1 - Förster, Arnold A1 - Vitusevich, S. A. A1 - Belyaev, A. E. T1 - Optically controlled 2D tunneling in GaAs delta-doped p-n junction / S. A. Vitusevich ; A. Förster ; A. E. Belyaev ... JF - Semiconductor Physics, Quantum Electronics & Optoelectronics (SQO) : International Scientific Journal. 2 (1999), H. 1 Y1 - 1999 SN - 1605-6582 SP - 7 EP - 10 ER - TY - JOUR A1 - Förster, Arnold A1 - Verghese, S. A1 - Zamdmer, N. A1 - Hu, Qing T1 - An optical correlator using a low-temperature-grown GaAs photoconductor / S. Verghese ; N. Zamdmer ; Qing Hu .... A. Förster JF - Applied physics letters. 69 (1996), H. 6 Y1 - 1996 SN - 0003-6951 N1 - ISSN der E-Ausg.: 1077-3118 SP - 842 EP - 844 ER - TY - JOUR A1 - Förster, Arnold A1 - Verghese, S. A1 - Zamdmer, N. A1 - Hu, Qing T1 - Cryogenic picosecond sampling using fiber-coupled photoconductive switch / S. Verghese ; N. Zamdmer ; Qing Hu ; A. Förster JF - Applied physics letters. 70 (1997), H. 20 Y1 - 1997 SN - 0003-6951 N1 - ISSN der E-Ausg.: 1077-3118 SP - 2644 EP - 2646 ER - TY - JOUR A1 - Förster, Arnold A1 - Tulke, A. A1 - Lüth, H. T1 - The Schottky barrier at the InSb(110)–Sn interface JF - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 5 (1987), H. 4 Y1 - 1987 SN - 1071-1023 N1 - ISSN der E-Ausg.: 0734-211X SP - 1054 EP - 1056 ER - TY - JOUR A1 - Förster, Arnold A1 - Tillmann, K. A1 - Thust, M. T1 - Determination of segregation, elastic strain and thin-foil relaxation in InxGa-1-x As islands on GaAs(001) by high resolution transmission electron microscopy / K. Tillmann ; A. Thust ; M. Lentzen ... A. Förster ... JF - Philosophical magazine / Letters. 74 (1996), H. 5 Y1 - 1996 SN - 1362-3036 SP - 309 EP - 315 ER - TY - JOUR A1 - Förster, Arnold A1 - Tillmann, K. A1 - Gerthsen, D. A1 - Pfundstein, P. T1 - Structural transformations and strain relaxation mechanisms of In0.6Ga0.4As islands grown by molecular beam epitaxy on GaAs(001) substrates / Tillmann, K. ; Gerthsen, D. ; Pfundstein, P. ; Förster, A. ; Urban, K. JF - Journal of applied physics. 78 (1995), H. 6 Y1 - 1995 SN - 0021-8979 SP - 3824 EP - 3832 ER - TY - JOUR A1 - Förster, Arnold A1 - Tillmann, K. A1 - Gerthsen, D. T1 - Growth morphology and misfit relaxation of MBE-grown In0.6 G0.4 As on GaAs(001) / K. Tillmann ; D. Gerthsen ; A. Förster ... JF - Thin solid films. 261 (1995), H. 1-2 Y1 - 1995 SN - 0040-6090 SP - 139 EP - 147 ER - TY - JOUR A1 - Förster, Arnold A1 - Tillmann, K. A1 - Gerthsen, D. T1 - Morphological transformations of MBE-grown In0.6Ga0.4As island on GaAs(001) substrates / K. Tillmann ; D. Gerthsen ; P. Pfundstein ; A. Förster ... JF - Microscopy of semiconducting materials 1995 : proceedings of the Institute of Physics Conference held at Oxford University, 20 - 23 March 1995 / Ed. by A G Cullis ... - (Conference series / Institute of Physics ; 146) Y1 - 1995 SN - 0-7503-0347-6 N1 - MSM <9, 1995, Oxford> ; Institut of Physics SP - 195 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Stock, J. A1 - Indlekofer, K. M. T1 - Perspectives of resonant tunneling diodes JF - Recent research developments in materials science & engineering/ 1,2 Y1 - 2002 SN - 81-7895-057-X N1 - Nebent.: Materials science & engineering SP - 527 EP - 556 PB - Transworld Research Network CY - Trivandrum, India ER - TY - JOUR A1 - Förster, Arnold A1 - Spitzer, A. A1 - Lüth, H. T1 - The adsorption of fluor-carbon complexes on GaAs(110) studied by electron energy loss spectroscopy JF - Surface Science. 172 (1986), H. 1 Y1 - 1986 SN - 0039-6028 N1 - ISSN der E-Ausg.: 0039-6028 SP - 174 EP - 182 ER - TY - JOUR A1 - Förster, Arnold A1 - Schönhut, J. A1 - Metzner, C. T1 - Optical investigation of impurity bands in a delta-doped n-layer / J. Schönhut ; C. Metzner ; S. Müller ... A. Förster ... JF - Solid state electronics. 40 (1996), H. 1-8 Y1 - 1996 SN - 0038-1101 SP - 701 EP - 705 ER - TY - JOUR A1 - Förster, Arnold A1 - Schäpers, T. A1 - Müller, F. A1 - Lengeler, B. T1 - Reflection and transmission of ballistic electrons at a potential barrier / Schäpers, T. ; Müller, F. ; Förster, A. ; Lengeler, B. ; Lüth, H. JF - Superlattices and microstructures . 14 (1993), H. 1 Y1 - 1993 SN - 0749-6036 SP - 57 ER - TY - JOUR A1 - Förster, Arnold A1 - Schäpers, T. A1 - Müller, F. T1 - Control of ballistic electrons in (AlGa)As/GaAs heterostructures by means of superconducting niobium gate structures / T. Schäpers ; F. Müller ; A. Förster ... JF - Surface Science. 305 (1994), H. 1-3 Y1 - 1994 SN - 0039-6028 N1 - ISSN der E-Ausg.: 0039-6028 SP - 460 EP - 464 ER - TY - JOUR A1 - Förster, Arnold A1 - Schäpers, T. A1 - Krüger, M. A1 - Appenzeller, J. T1 - Effect of electron-electron interaction on hot ballistic electron beams / Th. Schäpers ; M. Krüger ; J. Appenzeller ; A. Förster ... JF - Applied physics letters. 66 (1995), H. 26 Y1 - 1995 SN - 0003-6951 N1 - ISSN der E-Ausg.: 1077-3118 SP - 3603 EP - 3606 ER - TY - JOUR A1 - Förster, Arnold A1 - Schäfer, B.-J. A1 - Londschien, M. T1 - Arsenic passivation of MOMBE grown GaAs surfaces / B. -J. Schäfer ; A. Förster ; M. Londschien ... JF - Surface Science. 204 (1988), H. 3 Y1 - 1988 SN - 0039-6028 N1 - ISSN der E-Ausg.: 0039-6028 SP - 485 EP - 490 ER - TY - JOUR A1 - Förster, Arnold A1 - Schmidt, T. A1 - Tewordt, M. A1 - Haug, R. J. T1 - Peak-to-valley ratio of small resonant-tunneling diodes with various barrier-thickness asymmetries / T. Schmidt ; M. Tewordt ; R. J. Haug ... A. Förster ... JF - Applied physics letters. 68 (1996), H. 6 Y1 - 1996 SN - 0003-6951 N1 - ISSN der E-Ausg.: 1077-3118 SP - 838 EP - 840 ER - TY - JOUR A1 - Förster, Arnold A1 - Schmidt, T. A1 - Tewordt, M. A1 - Blick, R. H. T1 - Quantum-dot ground states in a magnetic field studied by single-electron tunneling spectroscopy on double-barrier heterostructures / T. Schmidt ; M. Tewordt ; R. H. Blick ... A. Förster ... JF - Physical Review B . 51 (1995), H. 8 Y1 - 1995 SN - 0163-1829 N1 - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795 SP - 5570 EP - 5573 ER - TY - JOUR A1 - Förster, Arnold A1 - Schmidt, T. A1 - Tewordt, M. T1 - Single-electron-tunneling spectroscopy of asymmetric laterally confined double-barrier heterostructures / T. Schmidt ; M. Tewordt ; R. J. Haug ... A. Förster ... JF - Solid state electronics. 40 (1996), H. 1-8 Y1 - 1996 SN - 0038-1101 SP - 15 EP - 19 ER - TY - JOUR A1 - Förster, Arnold A1 - Schmidt, T. A1 - Haug, R. J. T1 - Single-electron transport in small resonant-tunneling diodes with various barrier-thickness asymmetries / T. Schmidt ; R. J. Haug ; K. v. Klitzing ; A. Förster ... JF - Physical review / B, Condensed matter and materials physics. 55 (1997), H. 4 Y1 - 1997 SN - 1095-3795 SP - 2230 EP - 2236 ER - TY - JOUR A1 - Förster, Arnold A1 - Schmidt, T. A1 - Haug, R. J. T1 - Imaging the local density of states in a disordered semiconductor / T. Schmidt ; R. J. Haug ; V. I. Fal'ko ... A. Förster ... JF - 23rd International Conference on the Physics of Semiconductors : Berlin, Germany, July 21 - 26, 1996 / ed.: Matthias Scheffler ... - Vol. 3 Y1 - 1996 SN - 981-02-2947-X N1 - International Conference on the Physics of Semiconductors <23, 1996, Berlin> SP - 2251 EP - ff. PB - World Scientific CY - Singapore [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Schmidt, T. A1 - Haug, R. J. T1 - Spectroscopy of local density of states fluctuations in a disordered conductor / T. Schmidt ; R. J. Haug ; V. I. Fal'ko ... A. Förster ... JF - Europhysics letters. 36 (1996), H. 1 Y1 - 1996 SN - 1286-4854 SP - 61 EP - 66 ER - TY - JOUR A1 - Förster, Arnold A1 - Schmidt, T. A1 - Haug, R. J. T1 - Spectroscopy of the single-particle states of a quantum-dot molecule / T. Schmidt ; R. J. Haug ; K. v. Klitzing ; A. Förster ... JF - Physical review letters. 78 (1997), H. 8 Y1 - 1997 SN - 0031-9007 N1 - ISSN der E-Ausg.: 1079-7114 SP - 1544 EP - 1547 ER - TY - JOUR A1 - Förster, Arnold A1 - Schmidt, T. A1 - Haug, R. J. T1 - Observation of the local structure of landau bands in a disordered conductor / T. Schmidt ; R. J. Haug ; Vladimir I. Fal'ko ... A. Förster ... JF - Physical review letters. 78 (1997), H. 8 Y1 - 1997 SN - 0031-9007 N1 - ISSN der E-Ausg.: 1079-7114 SP - 1540 EP - 1543 ER - TY - JOUR A1 - Förster, Arnold A1 - Rosenauer, A. A1 - Remmele, T. T1 - Strain determination in mismatched semiconductor heterostructures by the digital analysis of lattice images / A. Rosenauer ; T. Remmele ; U. Fischer ; A. Förster ... JF - Microscopy of semiconducting materials 1997 : proceedings of the Royal Microscopical Society Conference held at Oxford University, 7 - 10 April 1997 / ed. by A. G. Cullis ... - (Conference series / Institute of Physics ; 157) Y1 - 1997 SN - 0-7503-0464-2 N1 - MSM <10, 1997, Oxford> ; Conference on Microscopy of Semiconducting Materials <10, 1997, Oxford> ; Institut of Physics SP - 39 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Rosenauer, A. A1 - Remmele, T. T1 - Atomic scale strain measurements by the digital analysis of transmission electron microscopic lattice images / A. Rosenauer ; T. Remmele ; D. Gerthsen ... A. Förster JF - Optik : international journal for light and electron optics. 105 (1997), H. 3 Y1 - 1997 SN - 0030-4026 SP - 99 EP - 107 ER - TY - JOUR A1 - Förster, Arnold A1 - Rosenauer, A. A1 - Oberst, W. A1 - Gerthsen, D. T1 - Atomic scale analysis of the indium distribution in InGaAs/GaAs (001) heterostructures: segregation, lateral indium redistribution and the effect of growth interruptions. Rosenauer, A. ; Oberst, W. ; Gerthsen, D. ; Förster, A. JF - Thin Solid Films. 357 (1999) Y1 - 1999 SN - 0040-6090 SP - 18 EP - 21 ER - TY - JOUR A1 - Förster, Arnold A1 - Rosenauer, A. A1 - Fischer, U. A1 - Gerthsen, D. T1 - Composition evaluation by lattice fringe analysis. Rosenauer, A.; Fischer U.; Gerthsen D.; Förster A. JF - Ultramicroscopy. 72 (1998), H. 3-4 Y1 - 1998 SN - 0304-3991 SP - 121 EP - 133 ER - TY - JOUR A1 - Förster, Arnold A1 - Rosenauer, A. A1 - Fischer, U. A1 - Gerthsen, D. T1 - Composition evaluation of InxGa1 – xAs Stranski-Krastanow-island structures by strain state analysis / A. Rosenauer ; U. Fischer ; D. Gerthsen ; A. Förster JF - Applied physics letters. 71 (1997), H. 26 Y1 - 1997 SN - 0003-6951 N1 - ISSN der E-Ausg.: 1077-3118 SP - 3868 EP - 3870 ER - TY - JOUR A1 - Förster, Arnold A1 - Rose, D. A1 - Pietsch, U. A1 - Metzger, T. H. T1 - Depth resolved investigations of the relaxation behaviour in strained GaInAs/GaAs superlattices using grazing incidence X-ray diffraction / Rose, D. ; Pietsch, U. ; Förster, A. ; Metzger, T. H. JF - Nuclear instruments and methods in physics research / Section B, Beam interactions with materials and atoms. 97 (1995), H. 1-4 Y1 - 1995 SN - 0168-583X SP - 333 EP - 336 ER - TY - JOUR A1 - Förster, Arnold A1 - Rose, D. A1 - Pietsch, U. A1 - Metzger, H. T1 - Depth resolved investigation of the relaxation behaviour in strained GaInAs/GaAs superlattices / Rose, D. ; Pietsch, U. ; Förster, A. ; Metzger, H.... JF - Physica B: condensed matter. 198 (1994), H. 1-3 Y1 - 1994 SN - 0921-4526 SP - 256 EP - 258 ER - TY - JOUR A1 - Förster, Arnold A1 - Rizzi, Angela A1 - Lüth, H. T1 - Epitaxial growth and characterization of Si/NiSi2/Si(111) heterostructures / Angela Rizzi ; A. Förster ; H. Lüth JF - Surface Science. 211 - 212 (1989) Y1 - 1989 SN - 0039-6028 N1 - ISSN der E-Ausg.: 0039-6028 SP - 620 EP - 629 ER - TY - JOUR A1 - Förster, Arnold A1 - Resch, U. A1 - Scholz, S. M. T1 - Thermal desorption of amorphous arsenic caps from GaAs(100) monitored by reflection anisotropy spectroscopy / U. Resch ; S. M. Scholz ; U. Rossow ... A. Förter ... JF - Applied Surface Science. 63 (1993), H. 1-4 Y1 - 1993 SN - 0169-4332 N1 - ISSN der E-Ausg.: 0169-4332 SP - 106 EP - 110 ER - TY - JOUR A1 - Förster, Arnold A1 - Resch, U. A1 - Essera, N. A1 - Raptis, Y. S. T1 - Arsenic passivation of MBE grown GaAs(100): structural and electronic properties of the decapped surfaces / U. Resch ; N. Essera ; Y. S. Raptis ... A. Förster ... JF - Surface Science. 269-270 (1992) Y1 - 1992 SN - 0039-6028 N1 - ISSN der E-Ausg.: 0039-6028 SP - 797 EP - 803 ER - TY - JOUR A1 - Förster, Arnold A1 - Ohler, C. A1 - Moers, J. T1 - Band offsets at heavily strained III - V interfaces / C. Ohler ; A. Förster ; J. Moers... JF - Journal of Physics D: Applied Physics. 30 (1997), H. 10 Y1 - 1997 SN - 0022-3727 N1 - ISSN der E-Ausg.: 1361-6463 SP - 1436 EP - 1441 ER - TY - JOUR A1 - Förster, Arnold A1 - Ohler, C. A1 - Moers, J. T1 - Strain dependence of the valence-band offset in arsenide compound heterojunctions determined by photoelectron spectroscopy / C. Ohler ; J. Moers ; A. Förster ... JF - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13 (1993), H. 4 Y1 - 1993 SN - 1071-1023 N1 - ISSN der E-Ausg.: 0734-211X SP - 1728 EP - 1735 ER - TY - JOUR A1 - Förster, Arnold A1 - Ohler, C. A1 - Kohleick, R. T1 - Strain dependence of the valence-band offset in InAs/GaAs heterojunctions determined by ultraviolet photoelectron spectroscopy / C. Ohler ; R. Kohleick ; A. Förster ... JF - Physical Review B . 50 (1994), H. 11 Y1 - 1994 SN - 0163-1829 N1 - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795 SP - 7833 EP - 7837 ER - TY - JOUR A1 - Förster, Arnold A1 - Ohler, C. A1 - Daniels, C. T1 - Heterojunction band offsets and Schottky-barrier heights: Tersoff’s theory in the presence of strain / C. Ohler ; C. Daniels ; A. Förster ... JF - Physical review / B, Condensed matter and materials physics. 58 (1998), H. 12 Y1 - 1998 SN - 1095-3795 SP - 7864 EP - 7871 ER - TY - JOUR A1 - Förster, Arnold A1 - Ohler, C. A1 - Daniels, C. T1 - Barrier height at clean Au/InAs(100) interfaces / C. Ohler ; C. Daniels ; A. Förster ... JF - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15 (1997), H. 3 Y1 - 1997 SN - 0169-4332 SP - 702 EP - 706 ER - TY - JOUR A1 - Förster, Arnold A1 - Novák, J. A1 - Morvic, M. T1 - Wet chemical separation of low-temperature GaAs layers from their GaAs substrates / J. Novák ; M. Morvic ; J. Betko ; A. Förster ... JF - Materials science and engineering / B, Solid state materials for advanced technology. 40 (1996), H. 1 Y1 - 1996 SN - 0921-5107 SP - 58 EP - 62 ER - TY - JOUR A1 - Förster, Arnold A1 - Novak, J. A1 - Kucera, M. A1 - Morvic, M. T1 - Characterization of low-temperature GaAs by galvanomagnetic an photoluminescence measurements / J. Novák ; M. Kucera ; M. Morvic ... A. Förster ... JF - Materials science and engineering B: Solid– state materials for advanced technology. 44 (1997), H. 1-3 Y1 - 1997 SN - 0921-5107 SP - 341 EP - 344 ER - TY - JOUR A1 - Förster, Arnold A1 - Müller, F. A1 - Lengeler, B. A1 - Schäpers, T. T1 - Electron-electron interaction in ballistic electron beams / F. Müller ; B. Lengeler ; Th. Schäpers ... A. Förster... JF - Physical Review B . 51 (1995), H. 8 Y1 - 1995 SN - 0163-1829 N1 - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795 SP - 5099 EP - 5105 ER - TY - JOUR A1 - Förster, Arnold A1 - Morvic, M. A1 - Betko, J. A1 - Novak, J. T1 - Characterization of low-temperature GaAs by conductivity, Hall effect and magnetoresistance measurements. Morvic, M., Betko, J.; Novak, J.; Förster, A.; Kordos, P. JF - 2nd Symposium on Non-Stoichiometric III-V Compounds : [4th - 6th October 1999, Erlangen] / [ed. by T. Marek ...] Friedrich-Alexander-Universität Erlangen-Nürnberg Y1 - 1999 SN - 3-932392-19-1 N1 - Symposium on Non-Stoichiometric III-V Compounds <2, 1999, Erlangen> SP - 79 EP - 85 PB - Lehrstuhl für Mikrocharakterisierung CY - Erlangen ER - TY - JOUR A1 - Förster, Arnold A1 - Morvic, M. A1 - Betko, J. T1 - On the hopping and band conductivity in molecular-beam epitaxial low-temperature grown GaAs / M. Morvic ; J. Betko ; J. Novák ... A. Förster JF - Physica status solidi / B, Basic research. 205 (1998), H. 1 Y1 - 1998 SN - 1521-3951 SP - 125 EP - 128 ER - TY - JOUR A1 - Förster, Arnold A1 - Montanari, Simone A1 - Lepsa, Mihail Ion A1 - Lüth, Hans T1 - High frequency investigation of graded gap injectors for GaAs Gunn diodes / Simone Montanari ; Arnold Förster ; Mihail Ion Lepsa ; Hans Lüth JF - Solid-state electronics. 49 (2005), H. 2 Y1 - 2005 SN - 0038-1101 SP - 245 EP - 250 ER - TY - JOUR A1 - Förster, Arnold A1 - Mikulics, M. A1 - Wu, S. A1 - Marso, M. T1 - Ultrafast and Highly Sensitive Photodetectors With Recessed Electrodes Fabricated on Low-Temperature-Grown GaAs. Mikulics, M.; Wu, S.; Marso, M.; Adam, R.; Förster, A.; van der Hart, A.; Kordos, P.; Lüth, H.; Sobolewski, R. JF - IEEE Photonics Technology Letters. 18 (2006), H. 7 Y1 - 2006 SP - 820 EP - 822 ER - TY - JOUR A1 - Förster, Arnold A1 - Mikulics, M. A1 - Siebe, F. A1 - Fox, A. T1 - Generation of 460 GHz radiation by photomixing in low-temperature-grown MBE GaAs. Mikulics, M.; Siebe, F.; Fox, A.; Marso, M.; Forster, A.; Stuer, H.; Schafer, F.; Gusten, R.; Kordos, P. JF - Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza Y1 - 2002 SN - 0-7803-7276-X N1 - International Conference on Advanced Semiconductor Devices and Microsystems ; (4, 2002, Smolenice). ASDAM '02 ; (4 : ; 2002.10.14-16 : ; Smolenice) SP - 129 EP - 132 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Mikulics, M. A1 - Marso, M. A1 - Adam, R. T1 - Low-temperature-grown MBE GaAs for terahertz photomixers. Mikulics, M.; Marso, M.; Adam, R.; Fox, A.; Buca, D.; Förster, A.; Kordos, P.; Xu, Y.; Sobolewski, R. JF - 2001 Symposium on Electron Devices for Microwave and Optoelectronic Applications ; [Vienna University of Technology, Institute of Electrical Measurements and Circuit Design, 15 - 16 November 2001, Vienna, Austria ; proceedings] / EDMO 2001. Organised by: Institute of Electrical Measurements and Circuit Design, Vienna University of Technology, Austria. With technical co-sponsorship from IEEE Electron Devices Society Y1 - 2001 SN - 078037049X N1 - IEEE catalog number: 01TH8567 SP - 155 EP - 155 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Marso, M. A1 - Mikulics, V. V. A1 - Adam, R. T1 - Ultrafast Phenomena in Freestanding LT-GaAs Devices. Marso, M.; Mikulics, V. V.; Adam, R.; Wu, S.; Zheng, X.; Camara, I.; Siebe, N. Y.; Förster, A.; Güsten, R.; Kordos, P.; Sobolewski, R. JF - Acta physica Polonica / A. 107 (2005), H. 1 Y1 - 2005 SN - 0587-4246 SP - 109 EP - 117 ER - TY - JOUR A1 - Förster, Arnold A1 - Marso, M. A1 - Gersdorf, P. A1 - Fox, A. T1 - An InAlAs-InGaAs OPFET with responsivity above 200 A/W at 1.3-μm wavelength. Marso, M.; Gersdorf, P.; Fox, A.; Hodel, U.; Lambertini, R.; Kordos, P. JF - IEEE Photonics Technology Letters. 11 (1999), H. 1 Y1 - 1999 SN - 1041-1135 SP - 117 EP - 119 ER - TY - JOUR A1 - Förster, Arnold A1 - Malzer, S. A1 - Heber, J. A1 - Peter, M. T1 - Vertical transport and relaxation mechanisms in d-doping superlattices. Malzer, S.; Heber, J.; Peter, M.; Eckl, S.; Elpelt, R.; Doehler, G. H.; Förster, A.; Lüth, H. JF - Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4 Y1 - 1998 SN - 1386-9477 SP - 349 EP - 352 ER - TY - JOUR A1 - Förster, Arnold A1 - Malindretos, Jörg A1 - Indlekofer, Klaus Michael A1 - Lepsa, Mihail Ion T1 - Homogeneity analysis of ion-implanted resonant tunnelling diodes for applications in digital logic circuits. Malindretos, Jörg; Förster, Arno; Indlekofer, Klaus Michael; Lepsa, Mihail Ion; Hardtdegen, Hilde; Schmidt, Roland; Luth, Hans JF - Superlattices and Microstructures. 31 (2002), H. 6 Y1 - 2002 SN - 0749-6036 SP - 315 EP - 325 ER - TY - JOUR A1 - Förster, Arnold A1 - Lüth, H. T1 - Surface reactions of trimethylgallium and trimethylarsenic on silicon surfaces JF - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 7 (1989), H. 4 Y1 - 1989 SN - 1071-1023 N1 - ISSN der E-Ausg.: 0734-211X SP - 720 EP - 724 ER - TY - JOUR A1 - Förster, Arnold A1 - Lüth, H. T1 - Investigation of the InSb(110)-Sn schottky barrier by means of electron energy loss spectroscopy JF - Surface Science. 189-190 (1987) Y1 - 1987 SN - 0039-6028 N1 - ISSN der E-Ausg.: 0039-6028 SP - 307 EP - 314 ER - TY - JOUR A1 - Förster, Arnold A1 - Lohe, C. A1 - Leuther, A. T1 - Quasi-two-dimensional plasmons of a single δ-doped layer in GaAs studied by high-resolution electron-energy-loss spectroscopy / C. Lohe ; A. Leuther ; A. Förster ... JF - Physical Review B . 47 (1993), H. 7 Y1 - 1993 SN - 0163-1829 N1 - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795 SP - 3819 EP - 3826 ER - TY - JOUR A1 - Förster, Arnold A1 - Leuther, A. A1 - Lüth, H. T1 - DX centres, conduction band offsets and Si-dopant segregation in heterostructures / A. Leuther ; A. Förster ; H. Lüth ... JF - Semiconductor science and technology. 11 (1996), H. 5 Y1 - 1996 SN - 1361-6641 SP - 766 EP - 771 ER - TY - JOUR A1 - Förster, Arnold A1 - Lepsa, M. I. A1 - Freundt, D. T1 - Hot electron injector Gunn diode for advanced driver assistance systems JF - Applied physics A: materials science and processing. 87 (2007), H. 3 Y1 - 2007 SN - 0947-8396 N1 - ISSN der E-Ausg.: 1432-0630 ; Special issue SP - 545 EP - 558 ER - TY - JOUR A1 - Förster, Arnold A1 - Lentzen, M. A1 - Gerthsen, D. T1 - Growth mode and strain relaxation during the initial stage of InxGa1–xAs growth on GaAs(001) / M. Lentzen ; D. Gerthsen ; A. Förster ... JF - Applied physics letters. 60 (1992), H. 1 Y1 - 1992 SN - 0003-6951 N1 - ISSN der E-Ausg.: 1077-3118 SP - 74 EP - 76 ER - TY - JOUR A1 - Förster, Arnold A1 - Lentzen, M. A1 - Gerthsen, D. T1 - Strain relaxation of lattice-mismatched In0.2Ga0.8As/GaAs superlattices on GaAs(001) substrates / M. Lentzen ; D. Gerthsen ; A. Förster ... JF - Microscopy of semiconducting materials 1995 : proceedings of the Institute of Physics Conference held at Oxford University, 20 - 23 March 1995 / Ed. by A G Cullis ... - (Conference series / Institute of Physics ; 146) Y1 - 1995 SN - 0-7503-0347-6 N1 - MSM <9, 1995, Oxford> ; Institut of Physics SP - 357 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Layet, J. M. A1 - Lüth, H. T1 - The effect of inhomogeneous dopant profiles on the electron energy loss spectra of Si(100) / JF - Applied Physics A: Materials Science & Processing. 47 (1988), H. 1 Y1 - 1988 SN - 0947-8396 N1 - ISSN der E-Ausg.: 1432-0630 SP - 95 EP - 97 ER - TY - JOUR A1 - Förster, Arnold A1 - Layet, J. M. A1 - Lüth, H. T1 - Evaluation of dopant profiles and diffusion constants by means of electron energy loss spectroscopy JF - Applied Surface Science. 41 - 42 (1989) Y1 - 1989 SN - 0169-4332 N1 - ISSN der E-Ausg.: 0169-4332 SP - 306 EP - 311 ER - TY - JOUR A1 - Förster, Arnold A1 - Lauter, J. A1 - Protic, D. A1 - Lüth, H. T1 - AlGaAs/GaAs SAM-avalanche photodiode : an X-ray detector for low energy photons / J. Lauter ; D. Protic ; A. Förster ; H. Lüth JF - Nuclear instruments and methods in physics research section A: Accelerators, spectrometers, detectors and associated equipment. 356 (1995), H. 2-3 Y1 - 1995 SN - 0168-9002 SP - 324 EP - 329 ER - TY - JOUR A1 - Förster, Arnold A1 - Lauter, J. A1 - Lüth, H. T1 - AlGaAs/GaAs avalanche detector array -1 GBit/s X-ray receiver for timing measurements / J. Lauter ; A. Förster ; H. Lüth ... JF - 1995 IEEE conference record : October 21 - 28, 1995, San Francisco / Patricia A. Moonier, guest ed. - Vol. 1 Y1 - 1996 SN - 0-7803-3180-X N1 - Nuclear Science Symposium <1995, San Francisco, Calif.> ; Medical Imaging Conference <1995, San Francisco, Calif.> ; IEEE catalog number: 95CH35898 SP - 579 EP - ff. PB - IEEE Service Center CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Lauter, J. A1 - Lüth, H. T1 - AlGaAs/GaAs avalanche detector array-1 GBit/s X-ray receiver fortiming measurements / J. Lauter ; A. Förster ; H. Lüth ... JF - IEEE Transactions on Nuclear Science (T-NS). 43 (1996), H. 3, Part 2 Y1 - 1996 SN - 0018-9499 SP - 1446 EP - 1451 ER - TY - JOUR A1 - Förster, Arnold A1 - Lauter, J. A1 - Bauser, E. T1 - Epitaxial gallium arsenide for nuclear radiation detector applications / J. Lauter ; E. Bauser ; A. Förster ... JF - Nuclear physics B / Proceedings supplements. 44 (1995), H. 1-3 Y1 - 1995 SN - 0920-5632 SP - 381 EP - 385 ER - TY - JOUR A1 - Förster, Arnold A1 - Lange, J. A1 - Gerthsen, D. T1 - The effect of growth temperature on AlAs/GaAs resonant tunnelling diodes JF - Journal of Physics D: Applied Physics. 27 (1994), H. 1 Y1 - 1994 SN - 0022-3727 N1 - ISSN der E-Ausg.: 1361-6463 SP - 175 EP - 178 ER - TY - JOUR A1 - Förster, Arnold A1 - Lange, J. A1 - Gerthsen, D. T1 - Effect of interface roughness and scattering on the performance of AlAs/InGaAs resonant tunneling diodes JF - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11 (1993), H. 4 Y1 - 1993 SN - 1071-1023 N1 - ISSN der E-Ausg.: 0734-211X SP - 1743 EP - 1747 ER - TY - JOUR A1 - Förster, Arnold A1 - Lachenmann, S. G. A1 - Kastalsky, A. A1 - Uhlisch, D. T1 - Hybrid superconductor/semiconductor step junction with three terminals. Lachenmann, S. G.; Kastalsky, A.; Förster A.; Uhlisch, D.; Neurohr, K.; Schäpers, Th. JF - Journal of Applied Physics. 83 (1998), H. 12 Y1 - 1998 SN - 1089-7550 SP - 8077 EP - 8079 ER - TY - JOUR A1 - Förster, Arnold A1 - Lachenmann, S. G. A1 - Kastalsky, A. T1 - Novel hybrid Nb/InAs/Nb step junctions / S. G. Lachenmann ; A. Kastalsky ; I. Friedrich ; A. Förster ... JF - Czechoslovak journal of physics . 46 (1996), H. S2 Y1 - 1996 SN - 0011-4626 SP - 659 ER - TY - JOUR A1 - Förster, Arnold A1 - Lachenmann, S. G. A1 - Kastalsky, A. T1 - Properties of Nb/InAs/Nb hybrid step junctions / S. G. Lachenmann ; A. Kastalsky ; I. Friedrich ; A. Förster ... JF - Journal of low temperature physics. 106 (1997), H. 3-4 Y1 - 1997 SN - 0022-2291 N1 - ISSN der E-Ausg.: 1573-7357 SP - 321 EP - 326 ER - TY - JOUR A1 - Förster, Arnold A1 - Lachenmann, S. G. A1 - Friedrich, I. A1 - Uhlisch, D. T1 - Superconductor/semiconductor step junctions: the basic element for hybrid three terminal devices. Lachenmann, S. G., Förster, A.; Friedrich, I.; Uhlisch, D.; Schäpers, Th.; Kastalsky, A.; Golubov, A. A. JF - Applied Superconductivity. 6 (1999), H. 10-12 Y1 - 1999 SN - 0964-1807 SP - 681 EP - 688 ER - TY - JOUR A1 - Förster, Arnold A1 - Lachenmann, S. G. A1 - Friedrich, I. T1 - Charge transport in superconductor/semiconductor/normal-conductor step junctions / S. G. Lachenmann ; I. Friedrich ; A. Förster ... JF - Physical review / B, Condensed matter and materials physics. 56 (1997), H. 21 Y1 - 1997 SN - 1095-3795 SP - 14108 EP - 14115 ER - TY - JOUR A1 - Förster, Arnold A1 - Lachenmann, S. G. A1 - Fridrich, I. A1 - Schäpers, T. T1 - Supression of the surface-inversion layer of p-type InAs. Lachenmann, S. G.; Fridrich, I.; Förster, A.; Schäpers, Th. JF - Journal of Applied Physics. 85 (1999), H. 12 Y1 - 1999 SN - 1089-7550 SP - 8242 EP - 8246 ER - TY - JOUR A1 - Förster, Arnold A1 - Kordos, P. A1 - Ruders, F. T1 - Properties of LT MBE GaAs for photomixing up to THz frequencies / P. Kordos ; F. Ruders ; M. Marso ; A. Förster JF - Proceedings : 8 - 11 December 1996, Australian National University, Canberra, Australia / ed.: C. Jagadish Y1 - 1997 SN - 0-7803-3374-8 N1 - Conference on Optoelectronic and Microelectronic Materials and Devices <1996, Canberra> ; IEEE catalog number: 96TH8197 SP - 71 EP - ff. PB - IEEE Service Center CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Kordos, P. A1 - Marso, M. A1 - Rüders, F. T1 - 550 GHz bandwidth photodetector on low-temperature grown molecular-beam epitaxial GaAs. Kordos, P., Förster, A.; Marso, M.; Rüders, F. JF - Electronics Letters. 34 (1998), H. 1 Y1 - 1998 SN - 1350-911X SP - 119 EP - 120 ER - TY - JOUR A1 - Förster, Arnold A1 - Kordos, P. A1 - Marso, M. T1 - Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs / P. Kordos ; M. Marso, ; A. Förster ... JF - Applied physics letters. 71 (1997), H. 8 Y1 - 1997 SN - 0003-6951 N1 - ISSN der E-Ausg.: 1077-3118 SP - 1118 EP - 1120 ER - TY - JOUR A1 - Förster, Arnold A1 - Kordos, P. A1 - Betko, J. T1 - Semi-insulating GaAs layers grown by molecular-beam epitaxy / P. Kordos ; A. Förster ; J. Betko ... JF - Applied physics letters. 67 (1995), H. 7 Y1 - 1995 SN - 0003-6951 N1 - ISSN der E-Ausg.: 1077-3118 SP - 983 EP - 985 ER - TY - JOUR A1 - Förster, Arnold A1 - Kordos, P. A1 - Betko, J. T1 - Electrical and structural characterization of MBE GaAs grown at temperatures between 200 and 600 °C / P. Kordos ; J. Betko; A. Förster ... JF - Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141) Y1 - 1995 SN - 0-7503-0226-7 N1 - International Symposium on Compound Semiconductors <21, 1994, San Diego, Calif.> ; Institute of Physics SP - 295 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Kohleick, R. A1 - Lüth, H. T1 - Ga segregation and the effect of Si and Ge interlayers at the GaAs(100)/AlAs heterostructure / R. Kohleick ; A. Förster ; H. Lüth JF - Physical Review B . 48 (1993), H. 20 Y1 - 1993 SN - 0163-1829 N1 - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795 SP - 15138 EP - 15143 ER - TY - JOUR A1 - Förster, Arnold A1 - Klemradt, U. A1 - Funke, M. A1 - Fromm, M T1 - Growth-induced interface roughness of GaAs/AlAs-layers studied by X-ray scattering under grazing angles / U. Klemradt ; M. Funke ; M. Fromm ... A Förster JF - Physica B: condensed matter. 221 (1996), H. 1-4 Y1 - 1996 SN - 0921-4526 SP - 27 EP - 33 ER - TY - JOUR A1 - Förster, Arnold A1 - Kiesslich, G. A1 - Wacker, A. A1 - Scholl, E. T1 - Nonlinear charging effect of quantum dots in a p-i-n diode. Kiesslich, G.; Wacker, A.; Scholl, E.; Vitusevich, S.A.; Belyaev, A.E.; Danylyuk, S.V.; Forster, A.; Klein, N.; Henini, M. JF - Physical Review B. 68 (2003) Y1 - 2003 SN - 1550-235X N1 - 125331 (6 Seiten) ER - TY - JOUR A1 - Förster, Arnold A1 - Kicin, S A1 - Cambel, V. A1 - Kuliffayova, M. T1 - Fabrication of GaAs symmetric pyramidal mesas prepared by wet-chemical etching using AlAs interlayer. Kicin, S.; Cambel, V.; Kuliffayova, M.; Gregusova, D.; Kovacova, E.; Novak, J.; Kostic, I.; Forster, A. JF - Journal of Applied Physics. 91 (2002), H. 2 Y1 - 2002 SN - 1089-7550 SP - 878 EP - 880 ER - TY - JOUR A1 - Förster, Arnold A1 - Janssen, G. A1 - Roer, T. G. van de T1 - Logic Circuits with reduced complexity based on devices with higher functionality / G. Janssen ; T. G. van de Roer ; W. Prost ... A. Förster JF - Proceedings / STW/SAFE 2nd Annual Workshop on Semiconductor Advances for Future Electronics, Safe '99 - ProRISC/IEEE 10th Annual Workshop on Circuits, Systems and Signal Processing, ProRISC 99 : November 24 - 26, 1999, Mierlo, The Netherlands [Elektronische Ressource] Y1 - 1999 N1 - SAFE <2, 1999, Mierlo> ; Workshop on Circuits, Systems and Signal Processing <10, 1999, Mierlo> ; Stichting voor de Technische Wetenschappen SP - 219 PB - Technology Foundation, STW CY - Utrecht ER - TY - JOUR A1 - Förster, Arnold A1 - Indlekofer, K.M. A1 - Lüth, H. T1 - Density-matrix description of a quantum dot system with variable lateral confinement in the single-electron tunneling regime. Indlekofer, K.M.; Förster, A.; Lüth, H. JF - Physica B: Condensed Matter. 314 (2002), H. 1-4 Y1 - 2002 SN - 0921-4526 SP - 499 EP - 502 ER - TY - JOUR A1 - Förster, Arnold A1 - Indlekofer, K. A1 - Lange, J. T1 - Theory of single-electron tunneling in resonant-tunneling diodes including scattering and multiple subbands at finite temperature / K. M. Indlekofer ; J. Lange ; A. Förster ... JF - Physical review / B, Condensed matter and materials physics. 53 (1996), H. 11 Y1 - 1996 SN - 1095-3795 SP - 7392 EP - 7402 ER - TY - JOUR A1 - Förster, Arnold A1 - Hu, Quing A1 - Verghese, S. T1 - High-frequency (f ~ 1 THz) studies of quantum-effect devices / Qing Hu ; S. Verghese ; R. A. Wyss ... A. Förster JF - Semiconductor science and technology. 11 (1996), H. 12 Y1 - 1996 SN - 1361-6641 SP - 1888 EP - 1894 ER - TY - JOUR A1 - Förster, Arnold A1 - Hauke, M. A1 - Jakumeit, J. A1 - Krafft, B. T1 - DX Centers in Al0.3Ga0.7As/GaAs Analyzed by Point Contact Measurements. Hauke, M.; Jakumeit, J.; Krafft, B.; Nimtz, G.; Förster, A.; Lüth, H. JF - Journal of Applied Physics. 84 (1998), H. 4 Y1 - 1998 SN - 1089-7550 SP - 2034 EP - 2039 ER - TY - JOUR A1 - Förster, Arnold A1 - Hartmann, A. A1 - Dieker, Ch. A1 - Hollfelder, M. T1 - Spontaneous formation of tilted AlGaAS/GaAs superlattice during AlGaAs growth. Hartmann, A.; Dieker, Ch.; Hollfelder, M.; Hardtdegen, H.; Förster, A.; Lüth, H. JF - Applied Surface Science. 123-124 (1998) Y1 - 1998 SN - 0169-4332 N1 - = Proceedings of the Sixth International Conference on the Formation of Semiconductor Interfaces SP - 704 EP - 709 ER - TY - JOUR A1 - Förster, Arnold A1 - Hardtdegen, Hilde A1 - Ungermanns, C. T1 - Comparative investigation of electrical and optical characteristics of AlxGa1-xAs/GaAs structures deposited by LP-MOVPE and MBE / H. Hardtdegen ; M. Hollfelder ; C. Ungermanns ... A. Förster ... JF - Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141) Y1 - 1995 SN - 0-7503-0226-7 N1 - International Symposium on Compound Semiconductors <21, 1994, San Diego, Calif.> ; Institute of Physics SP - 81 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Griebel, M. A1 - Indlekofer, M. A1 - Lüth, H. T1 - Transport through a buried double barrier single electron transistor at low temperatures JF - Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4 Y1 - 1998 SN - 1386-9477 SP - 502 EP - 506 ER - TY - JOUR A1 - Förster, Arnold A1 - Griebel, M. A1 - Indlekofer, K.M. A1 - Lüth, H. T1 - Single electron transport in resonant tunnelling diodes laterally confined by ion implantation. Griebel, M.; Indlekofer, K.M.; Förster, A.; Lüth, H. JF - Journal of Physics D: Applied Physics. 32 (1999), H. 14 Y1 - 1999 SN - 1361-6463 SP - 1729 EP - 1733 ER - TY - JOUR A1 - Förster, Arnold A1 - Griebel, M. A1 - Indlekofer, K. M. A1 - Lüth, H. T1 - Transport properties of gated resonant tunneling diodes in the single electron regime. Griebel, M.; Indlekofer, K. M.; Förster, A.; Lüth, H. JF - Journal of Applied Physics. 84 (1998), H. 12 Y1 - 1998 SN - 1089-7550 SP - 6719 EP - 6724 ER - TY - JOUR A1 - Förster, Arnold A1 - Döhler, G. H A1 - Heber, J. T1 - Hot electrons in n-i-p.i-based devices / G. H. Döhler ; J. Heber ... A. Förster ... JF - Hot electrons in semiconductors : physics and devices / ed. by N. Balkan. - (Series on semiconductor science and technology ; 5) Y1 - 1998 SN - 0-19-850058-0 SP - 478 EP - 504 PB - Clarendon Press CY - Oxford ER - TY - JOUR A1 - Förster, Arnold A1 - Dubecky, F.. A1 - Darmo, J. T1 - Investigation of deep-level states in bulk and low temperature MBE semiinsulating GaAs by admittance transient spectroscopy / F. Dubecky ; J. Darmo ; M. Darviras ; A. Förster ... JF - Semi-insulating III-V materials, Ixtapa, Mexico 1992 : proceedings of the 7th Conference on Semi-insulating III-V Materials, Ixtapa, Mexico, 21 - 24 April 1992 / ed. by C. J. Miner ... Y1 - 1994 SN - 0-7503-0242-9 N1 - Conference on Semi-Insulating III-V Materials <7, 1992, Ixtapa> SP - 265 EP - 272 PB - Inst. of Physics Publ. CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Dieker, C. A1 - Gerthsen, D. T1 - Microstructure of the AlAs/GaAs and AlAs/InGaAs resonant tunneling diodes and its correlation with the electrical properties / C. Dieker ; D. Gerthsen ; A. Förster ... JF - Microscopy of semiconducting materials 1993 : proceedings of the Royal Microscopical Society Conference held at Oxford University, 5 - 8 April 1993 / ed. by A. G. Cullis ... - (Conference series / Institute of Physics ; 134) Y1 - 1993 SN - 0-7503-0290-9 N1 - Royal Microscopical Society Conference on Microscopy of Semiconducting Materials <8, 1993, Oxford> ; MSM <8, 1993, Oxford> SP - 253 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Dekorsy, T. A1 - Kim, A. T. M. T1 - Subpicosecond coherent carrier-phonon dynamics in semiconductor heterostructures / T. Dekorsy ; A. M. T. Kim ; G. C. Cho ... A. Förster JF - Physical review / B, Condensed matter and materials physics. 53 (1996), H. 3 Y1 - 1996 SN - 1095-3795 SP - 1531 EP - 1538 ER -