TY - JOUR A1 - Förster, Arnold A1 - Rosenauer, A. A1 - Oberst, W. A1 - Gerthsen, D. T1 - Atomic scale analysis of the indium distribution in InGaAs/GaAs (001) heterostructures: segregation, lateral indium redistribution and the effect of growth interruptions. Rosenauer, A. ; Oberst, W. ; Gerthsen, D. ; Förster, A. JF - Thin Solid Films. 357 (1999) Y1 - 1999 SN - 0040-6090 SP - 18 EP - 21 ER - TY - JOUR A1 - Förster, Arnold A1 - Rosenauer, A. A1 - Fischer, U. A1 - Gerthsen, D. T1 - Composition evaluation by lattice fringe analysis. Rosenauer, A.; Fischer U.; Gerthsen D.; Förster A. JF - Ultramicroscopy. 72 (1998), H. 3-4 Y1 - 1998 SN - 0304-3991 SP - 121 EP - 133 ER - TY - JOUR A1 - Förster, Arnold A1 - Rosenauer, A. A1 - Fischer, U. A1 - Gerthsen, D. T1 - Composition evaluation of InxGa1 – xAs Stranski-Krastanow-island structures by strain state analysis / A. Rosenauer ; U. Fischer ; D. Gerthsen ; A. Förster JF - Applied physics letters. 71 (1997), H. 26 Y1 - 1997 SN - 0003-6951 N1 - ISSN der E-Ausg.: 1077-3118 SP - 3868 EP - 3870 ER - TY - JOUR A1 - Förster, Arnold A1 - Rose, D. A1 - Pietsch, U. A1 - Metzger, T. H. T1 - Depth resolved investigations of the relaxation behaviour in strained GaInAs/GaAs superlattices using grazing incidence X-ray diffraction / Rose, D. ; Pietsch, U. ; Förster, A. ; Metzger, T. H. JF - Nuclear instruments and methods in physics research / Section B, Beam interactions with materials and atoms. 97 (1995), H. 1-4 Y1 - 1995 SN - 0168-583X SP - 333 EP - 336 ER - TY - JOUR A1 - Förster, Arnold A1 - Rose, D. A1 - Pietsch, U. A1 - Metzger, H. T1 - Depth resolved investigation of the relaxation behaviour in strained GaInAs/GaAs superlattices / Rose, D. ; Pietsch, U. ; Förster, A. ; Metzger, H.... JF - Physica B: condensed matter. 198 (1994), H. 1-3 Y1 - 1994 SN - 0921-4526 SP - 256 EP - 258 ER - TY - JOUR A1 - Förster, Arnold A1 - Rizzi, Angela A1 - Lüth, H. T1 - Epitaxial growth and characterization of Si/NiSi2/Si(111) heterostructures / Angela Rizzi ; A. Förster ; H. Lüth JF - Surface Science. 211 - 212 (1989) Y1 - 1989 SN - 0039-6028 N1 - ISSN der E-Ausg.: 0039-6028 SP - 620 EP - 629 ER - TY - JOUR A1 - Förster, Arnold A1 - Resch, U. A1 - Scholz, S. M. T1 - Thermal desorption of amorphous arsenic caps from GaAs(100) monitored by reflection anisotropy spectroscopy / U. Resch ; S. M. Scholz ; U. Rossow ... A. Förter ... JF - Applied Surface Science. 63 (1993), H. 1-4 Y1 - 1993 SN - 0169-4332 N1 - ISSN der E-Ausg.: 0169-4332 SP - 106 EP - 110 ER - TY - JOUR A1 - Förster, Arnold A1 - Resch, U. A1 - Essera, N. A1 - Raptis, Y. S. T1 - Arsenic passivation of MBE grown GaAs(100): structural and electronic properties of the decapped surfaces / U. Resch ; N. Essera ; Y. S. Raptis ... A. Förster ... JF - Surface Science. 269-270 (1992) Y1 - 1992 SN - 0039-6028 N1 - ISSN der E-Ausg.: 0039-6028 SP - 797 EP - 803 ER - TY - JOUR A1 - Förster, Arnold A1 - Ohler, C. A1 - Moers, J. T1 - Band offsets at heavily strained III - V interfaces / C. Ohler ; A. Förster ; J. Moers... JF - Journal of Physics D: Applied Physics. 30 (1997), H. 10 Y1 - 1997 SN - 0022-3727 N1 - ISSN der E-Ausg.: 1361-6463 SP - 1436 EP - 1441 ER - TY - JOUR A1 - Förster, Arnold A1 - Ohler, C. A1 - Moers, J. T1 - Strain dependence of the valence-band offset in arsenide compound heterojunctions determined by photoelectron spectroscopy / C. Ohler ; J. Moers ; A. Förster ... JF - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13 (1993), H. 4 Y1 - 1993 SN - 1071-1023 N1 - ISSN der E-Ausg.: 0734-211X SP - 1728 EP - 1735 ER - TY - JOUR A1 - Förster, Arnold A1 - Ohler, C. A1 - Kohleick, R. T1 - Strain dependence of the valence-band offset in InAs/GaAs heterojunctions determined by ultraviolet photoelectron spectroscopy / C. Ohler ; R. Kohleick ; A. Förster ... JF - Physical Review B . 50 (1994), H. 11 Y1 - 1994 SN - 0163-1829 N1 - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795 SP - 7833 EP - 7837 ER - TY - JOUR A1 - Förster, Arnold A1 - Ohler, C. A1 - Daniels, C. T1 - Heterojunction band offsets and Schottky-barrier heights: Tersoff’s theory in the presence of strain / C. Ohler ; C. Daniels ; A. Förster ... JF - Physical review / B, Condensed matter and materials physics. 58 (1998), H. 12 Y1 - 1998 SN - 1095-3795 SP - 7864 EP - 7871 ER - TY - JOUR A1 - Förster, Arnold A1 - Ohler, C. A1 - Daniels, C. T1 - Barrier height at clean Au/InAs(100) interfaces / C. Ohler ; C. Daniels ; A. Förster ... JF - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15 (1997), H. 3 Y1 - 1997 SN - 0169-4332 SP - 702 EP - 706 ER - TY - JOUR A1 - Förster, Arnold A1 - Novák, J. A1 - Morvic, M. T1 - Wet chemical separation of low-temperature GaAs layers from their GaAs substrates / J. Novák ; M. Morvic ; J. Betko ; A. Förster ... JF - Materials science and engineering / B, Solid state materials for advanced technology. 40 (1996), H. 1 Y1 - 1996 SN - 0921-5107 SP - 58 EP - 62 ER - TY - JOUR A1 - Förster, Arnold A1 - Novak, J. A1 - Kucera, M. A1 - Morvic, M. T1 - Characterization of low-temperature GaAs by galvanomagnetic an photoluminescence measurements / J. Novák ; M. Kucera ; M. Morvic ... A. Förster ... JF - Materials science and engineering B: Solid– state materials for advanced technology. 44 (1997), H. 1-3 Y1 - 1997 SN - 0921-5107 SP - 341 EP - 344 ER - TY - JOUR A1 - Förster, Arnold A1 - Müller, F. A1 - Lengeler, B. A1 - Schäpers, T. T1 - Electron-electron interaction in ballistic electron beams / F. Müller ; B. Lengeler ; Th. Schäpers ... A. Förster... JF - Physical Review B . 51 (1995), H. 8 Y1 - 1995 SN - 0163-1829 N1 - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795 SP - 5099 EP - 5105 ER - TY - JOUR A1 - Förster, Arnold A1 - Morvic, M. A1 - Betko, J. A1 - Novak, J. T1 - Characterization of low-temperature GaAs by conductivity, Hall effect and magnetoresistance measurements. Morvic, M., Betko, J.; Novak, J.; Förster, A.; Kordos, P. JF - 2nd Symposium on Non-Stoichiometric III-V Compounds : [4th - 6th October 1999, Erlangen] / [ed. by T. Marek ...] Friedrich-Alexander-Universität Erlangen-Nürnberg Y1 - 1999 SN - 3-932392-19-1 N1 - Symposium on Non-Stoichiometric III-V Compounds <2, 1999, Erlangen> SP - 79 EP - 85 PB - Lehrstuhl für Mikrocharakterisierung CY - Erlangen ER - TY - JOUR A1 - Förster, Arnold A1 - Morvic, M. A1 - Betko, J. T1 - On the hopping and band conductivity in molecular-beam epitaxial low-temperature grown GaAs / M. Morvic ; J. Betko ; J. Novák ... A. Förster JF - Physica status solidi / B, Basic research. 205 (1998), H. 1 Y1 - 1998 SN - 1521-3951 SP - 125 EP - 128 ER - TY - JOUR A1 - Förster, Arnold A1 - Montanari, Simone A1 - Lepsa, Mihail Ion A1 - Lüth, Hans T1 - High frequency investigation of graded gap injectors for GaAs Gunn diodes / Simone Montanari ; Arnold Förster ; Mihail Ion Lepsa ; Hans Lüth JF - Solid-state electronics. 49 (2005), H. 2 Y1 - 2005 SN - 0038-1101 SP - 245 EP - 250 ER - TY - JOUR A1 - Förster, Arnold A1 - Mikulics, M. A1 - Wu, S. A1 - Marso, M. T1 - Ultrafast and Highly Sensitive Photodetectors With Recessed Electrodes Fabricated on Low-Temperature-Grown GaAs. Mikulics, M.; Wu, S.; Marso, M.; Adam, R.; Förster, A.; van der Hart, A.; Kordos, P.; Lüth, H.; Sobolewski, R. JF - IEEE Photonics Technology Letters. 18 (2006), H. 7 Y1 - 2006 SP - 820 EP - 822 ER - TY - JOUR A1 - Förster, Arnold A1 - Mikulics, M. A1 - Siebe, F. A1 - Fox, A. T1 - Generation of 460 GHz radiation by photomixing in low-temperature-grown MBE GaAs. Mikulics, M.; Siebe, F.; Fox, A.; Marso, M.; Forster, A.; Stuer, H.; Schafer, F.; Gusten, R.; Kordos, P. JF - Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza Y1 - 2002 SN - 0-7803-7276-X N1 - International Conference on Advanced Semiconductor Devices and Microsystems ; (4, 2002, Smolenice). ASDAM '02 ; (4 : ; 2002.10.14-16 : ; Smolenice) SP - 129 EP - 132 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Mikulics, M. A1 - Marso, M. A1 - Adam, R. T1 - Low-temperature-grown MBE GaAs for terahertz photomixers. Mikulics, M.; Marso, M.; Adam, R.; Fox, A.; Buca, D.; Förster, A.; Kordos, P.; Xu, Y.; Sobolewski, R. JF - 2001 Symposium on Electron Devices for Microwave and Optoelectronic Applications ; [Vienna University of Technology, Institute of Electrical Measurements and Circuit Design, 15 - 16 November 2001, Vienna, Austria ; proceedings] / EDMO 2001. Organised by: Institute of Electrical Measurements and Circuit Design, Vienna University of Technology, Austria. With technical co-sponsorship from IEEE Electron Devices Society Y1 - 2001 SN - 078037049X N1 - IEEE catalog number: 01TH8567 SP - 155 EP - 155 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Marso, M. A1 - Mikulics, V. V. A1 - Adam, R. T1 - Ultrafast Phenomena in Freestanding LT-GaAs Devices. Marso, M.; Mikulics, V. V.; Adam, R.; Wu, S.; Zheng, X.; Camara, I.; Siebe, N. Y.; Förster, A.; Güsten, R.; Kordos, P.; Sobolewski, R. JF - Acta physica Polonica / A. 107 (2005), H. 1 Y1 - 2005 SN - 0587-4246 SP - 109 EP - 117 ER - TY - JOUR A1 - Förster, Arnold A1 - Marso, M. A1 - Gersdorf, P. A1 - Fox, A. T1 - An InAlAs-InGaAs OPFET with responsivity above 200 A/W at 1.3-μm wavelength. Marso, M.; Gersdorf, P.; Fox, A.; Hodel, U.; Lambertini, R.; Kordos, P. JF - IEEE Photonics Technology Letters. 11 (1999), H. 1 Y1 - 1999 SN - 1041-1135 SP - 117 EP - 119 ER - TY - JOUR A1 - Förster, Arnold A1 - Malzer, S. A1 - Heber, J. A1 - Peter, M. T1 - Vertical transport and relaxation mechanisms in d-doping superlattices. Malzer, S.; Heber, J.; Peter, M.; Eckl, S.; Elpelt, R.; Doehler, G. H.; Förster, A.; Lüth, H. JF - Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4 Y1 - 1998 SN - 1386-9477 SP - 349 EP - 352 ER - TY - JOUR A1 - Förster, Arnold A1 - Malindretos, Jörg A1 - Indlekofer, Klaus Michael A1 - Lepsa, Mihail Ion T1 - Homogeneity analysis of ion-implanted resonant tunnelling diodes for applications in digital logic circuits. Malindretos, Jörg; Förster, Arno; Indlekofer, Klaus Michael; Lepsa, Mihail Ion; Hardtdegen, Hilde; Schmidt, Roland; Luth, Hans JF - Superlattices and Microstructures. 31 (2002), H. 6 Y1 - 2002 SN - 0749-6036 SP - 315 EP - 325 ER - TY - JOUR A1 - Förster, Arnold A1 - Lüth, H. T1 - Surface reactions of trimethylgallium and trimethylarsenic on silicon surfaces JF - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 7 (1989), H. 4 Y1 - 1989 SN - 1071-1023 N1 - ISSN der E-Ausg.: 0734-211X SP - 720 EP - 724 ER - TY - JOUR A1 - Förster, Arnold A1 - Lüth, H. T1 - Investigation of the InSb(110)-Sn schottky barrier by means of electron energy loss spectroscopy JF - Surface Science. 189-190 (1987) Y1 - 1987 SN - 0039-6028 N1 - ISSN der E-Ausg.: 0039-6028 SP - 307 EP - 314 ER - TY - JOUR A1 - Förster, Arnold A1 - Lohe, C. A1 - Leuther, A. T1 - Quasi-two-dimensional plasmons of a single δ-doped layer in GaAs studied by high-resolution electron-energy-loss spectroscopy / C. Lohe ; A. Leuther ; A. Förster ... JF - Physical Review B . 47 (1993), H. 7 Y1 - 1993 SN - 0163-1829 N1 - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795 SP - 3819 EP - 3826 ER - TY - JOUR A1 - Förster, Arnold A1 - Leuther, A. A1 - Lüth, H. T1 - DX centres, conduction band offsets and Si-dopant segregation in heterostructures / A. Leuther ; A. Förster ; H. Lüth ... JF - Semiconductor science and technology. 11 (1996), H. 5 Y1 - 1996 SN - 1361-6641 SP - 766 EP - 771 ER - TY - JOUR A1 - Förster, Arnold A1 - Lepsa, M. I. A1 - Freundt, D. T1 - Hot electron injector Gunn diode for advanced driver assistance systems JF - Applied physics A: materials science and processing. 87 (2007), H. 3 Y1 - 2007 SN - 0947-8396 N1 - ISSN der E-Ausg.: 1432-0630 ; Special issue SP - 545 EP - 558 ER - TY - JOUR A1 - Förster, Arnold A1 - Lentzen, M. A1 - Gerthsen, D. T1 - Growth mode and strain relaxation during the initial stage of InxGa1–xAs growth on GaAs(001) / M. Lentzen ; D. Gerthsen ; A. Förster ... JF - Applied physics letters. 60 (1992), H. 1 Y1 - 1992 SN - 0003-6951 N1 - ISSN der E-Ausg.: 1077-3118 SP - 74 EP - 76 ER - TY - JOUR A1 - Förster, Arnold A1 - Lentzen, M. A1 - Gerthsen, D. T1 - Strain relaxation of lattice-mismatched In0.2Ga0.8As/GaAs superlattices on GaAs(001) substrates / M. Lentzen ; D. Gerthsen ; A. Förster ... JF - Microscopy of semiconducting materials 1995 : proceedings of the Institute of Physics Conference held at Oxford University, 20 - 23 March 1995 / Ed. by A G Cullis ... - (Conference series / Institute of Physics ; 146) Y1 - 1995 SN - 0-7503-0347-6 N1 - MSM <9, 1995, Oxford> ; Institut of Physics SP - 357 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Layet, J. M. A1 - Lüth, H. T1 - The effect of inhomogeneous dopant profiles on the electron energy loss spectra of Si(100) / JF - Applied Physics A: Materials Science & Processing. 47 (1988), H. 1 Y1 - 1988 SN - 0947-8396 N1 - ISSN der E-Ausg.: 1432-0630 SP - 95 EP - 97 ER - TY - JOUR A1 - Förster, Arnold A1 - Layet, J. M. A1 - Lüth, H. T1 - Evaluation of dopant profiles and diffusion constants by means of electron energy loss spectroscopy JF - Applied Surface Science. 41 - 42 (1989) Y1 - 1989 SN - 0169-4332 N1 - ISSN der E-Ausg.: 0169-4332 SP - 306 EP - 311 ER - TY - JOUR A1 - Förster, Arnold A1 - Lauter, J. A1 - Protic, D. A1 - Lüth, H. T1 - AlGaAs/GaAs SAM-avalanche photodiode : an X-ray detector for low energy photons / J. Lauter ; D. Protic ; A. Förster ; H. Lüth JF - Nuclear instruments and methods in physics research section A: Accelerators, spectrometers, detectors and associated equipment. 356 (1995), H. 2-3 Y1 - 1995 SN - 0168-9002 SP - 324 EP - 329 ER - TY - JOUR A1 - Förster, Arnold A1 - Lauter, J. A1 - Lüth, H. T1 - AlGaAs/GaAs avalanche detector array -1 GBit/s X-ray receiver for timing measurements / J. Lauter ; A. Förster ; H. Lüth ... JF - 1995 IEEE conference record : October 21 - 28, 1995, San Francisco / Patricia A. Moonier, guest ed. - Vol. 1 Y1 - 1996 SN - 0-7803-3180-X N1 - Nuclear Science Symposium <1995, San Francisco, Calif.> ; Medical Imaging Conference <1995, San Francisco, Calif.> ; IEEE catalog number: 95CH35898 SP - 579 EP - ff. PB - IEEE Service Center CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Lauter, J. A1 - Lüth, H. T1 - AlGaAs/GaAs avalanche detector array-1 GBit/s X-ray receiver fortiming measurements / J. Lauter ; A. Förster ; H. Lüth ... JF - IEEE Transactions on Nuclear Science (T-NS). 43 (1996), H. 3, Part 2 Y1 - 1996 SN - 0018-9499 SP - 1446 EP - 1451 ER - TY - JOUR A1 - Förster, Arnold A1 - Lauter, J. A1 - Bauser, E. T1 - Epitaxial gallium arsenide for nuclear radiation detector applications / J. Lauter ; E. Bauser ; A. Förster ... JF - Nuclear physics B / Proceedings supplements. 44 (1995), H. 1-3 Y1 - 1995 SN - 0920-5632 SP - 381 EP - 385 ER - TY - JOUR A1 - Förster, Arnold A1 - Lange, J. A1 - Gerthsen, D. T1 - The effect of growth temperature on AlAs/GaAs resonant tunnelling diodes JF - Journal of Physics D: Applied Physics. 27 (1994), H. 1 Y1 - 1994 SN - 0022-3727 N1 - ISSN der E-Ausg.: 1361-6463 SP - 175 EP - 178 ER - TY - JOUR A1 - Förster, Arnold A1 - Lange, J. A1 - Gerthsen, D. T1 - Effect of interface roughness and scattering on the performance of AlAs/InGaAs resonant tunneling diodes JF - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11 (1993), H. 4 Y1 - 1993 SN - 1071-1023 N1 - ISSN der E-Ausg.: 0734-211X SP - 1743 EP - 1747 ER - TY - JOUR A1 - Förster, Arnold A1 - Lachenmann, S. G. A1 - Kastalsky, A. A1 - Uhlisch, D. T1 - Hybrid superconductor/semiconductor step junction with three terminals. Lachenmann, S. G.; Kastalsky, A.; Förster A.; Uhlisch, D.; Neurohr, K.; Schäpers, Th. JF - Journal of Applied Physics. 83 (1998), H. 12 Y1 - 1998 SN - 1089-7550 SP - 8077 EP - 8079 ER - TY - JOUR A1 - Förster, Arnold A1 - Lachenmann, S. G. A1 - Kastalsky, A. T1 - Novel hybrid Nb/InAs/Nb step junctions / S. G. Lachenmann ; A. Kastalsky ; I. Friedrich ; A. Förster ... JF - Czechoslovak journal of physics . 46 (1996), H. S2 Y1 - 1996 SN - 0011-4626 SP - 659 ER - TY - JOUR A1 - Förster, Arnold A1 - Lachenmann, S. G. A1 - Kastalsky, A. T1 - Properties of Nb/InAs/Nb hybrid step junctions / S. G. Lachenmann ; A. Kastalsky ; I. Friedrich ; A. Förster ... JF - Journal of low temperature physics. 106 (1997), H. 3-4 Y1 - 1997 SN - 0022-2291 N1 - ISSN der E-Ausg.: 1573-7357 SP - 321 EP - 326 ER - TY - JOUR A1 - Förster, Arnold A1 - Lachenmann, S. G. A1 - Friedrich, I. A1 - Uhlisch, D. T1 - Superconductor/semiconductor step junctions: the basic element for hybrid three terminal devices. Lachenmann, S. G., Förster, A.; Friedrich, I.; Uhlisch, D.; Schäpers, Th.; Kastalsky, A.; Golubov, A. A. JF - Applied Superconductivity. 6 (1999), H. 10-12 Y1 - 1999 SN - 0964-1807 SP - 681 EP - 688 ER - TY - JOUR A1 - Förster, Arnold A1 - Lachenmann, S. G. A1 - Friedrich, I. T1 - Charge transport in superconductor/semiconductor/normal-conductor step junctions / S. G. Lachenmann ; I. Friedrich ; A. Förster ... JF - Physical review / B, Condensed matter and materials physics. 56 (1997), H. 21 Y1 - 1997 SN - 1095-3795 SP - 14108 EP - 14115 ER - TY - JOUR A1 - Förster, Arnold A1 - Lachenmann, S. G. A1 - Fridrich, I. A1 - Schäpers, T. T1 - Supression of the surface-inversion layer of p-type InAs. Lachenmann, S. G.; Fridrich, I.; Förster, A.; Schäpers, Th. JF - Journal of Applied Physics. 85 (1999), H. 12 Y1 - 1999 SN - 1089-7550 SP - 8242 EP - 8246 ER - TY - JOUR A1 - Förster, Arnold A1 - Kordos, P. A1 - Ruders, F. T1 - Properties of LT MBE GaAs for photomixing up to THz frequencies / P. Kordos ; F. Ruders ; M. Marso ; A. Förster JF - Proceedings : 8 - 11 December 1996, Australian National University, Canberra, Australia / ed.: C. Jagadish Y1 - 1997 SN - 0-7803-3374-8 N1 - Conference on Optoelectronic and Microelectronic Materials and Devices <1996, Canberra> ; IEEE catalog number: 96TH8197 SP - 71 EP - ff. PB - IEEE Service Center CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Kordos, P. A1 - Marso, M. A1 - Rüders, F. T1 - 550 GHz bandwidth photodetector on low-temperature grown molecular-beam epitaxial GaAs. Kordos, P., Förster, A.; Marso, M.; Rüders, F. JF - Electronics Letters. 34 (1998), H. 1 Y1 - 1998 SN - 1350-911X SP - 119 EP - 120 ER - TY - JOUR A1 - Förster, Arnold A1 - Kordos, P. A1 - Marso, M. T1 - Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs / P. Kordos ; M. Marso, ; A. Förster ... JF - Applied physics letters. 71 (1997), H. 8 Y1 - 1997 SN - 0003-6951 N1 - ISSN der E-Ausg.: 1077-3118 SP - 1118 EP - 1120 ER - TY - JOUR A1 - Förster, Arnold A1 - Kordos, P. A1 - Betko, J. T1 - Semi-insulating GaAs layers grown by molecular-beam epitaxy / P. Kordos ; A. Förster ; J. Betko ... JF - Applied physics letters. 67 (1995), H. 7 Y1 - 1995 SN - 0003-6951 N1 - ISSN der E-Ausg.: 1077-3118 SP - 983 EP - 985 ER - TY - JOUR A1 - Förster, Arnold A1 - Kordos, P. A1 - Betko, J. T1 - Electrical and structural characterization of MBE GaAs grown at temperatures between 200 and 600 °C / P. Kordos ; J. Betko; A. Förster ... JF - Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141) Y1 - 1995 SN - 0-7503-0226-7 N1 - International Symposium on Compound Semiconductors <21, 1994, San Diego, Calif.> ; Institute of Physics SP - 295 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Kohleick, R. A1 - Lüth, H. T1 - Ga segregation and the effect of Si and Ge interlayers at the GaAs(100)/AlAs heterostructure / R. Kohleick ; A. Förster ; H. Lüth JF - Physical Review B . 48 (1993), H. 20 Y1 - 1993 SN - 0163-1829 N1 - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795 SP - 15138 EP - 15143 ER - TY - JOUR A1 - Förster, Arnold A1 - Klemradt, U. A1 - Funke, M. A1 - Fromm, M T1 - Growth-induced interface roughness of GaAs/AlAs-layers studied by X-ray scattering under grazing angles / U. Klemradt ; M. Funke ; M. Fromm ... A Förster JF - Physica B: condensed matter. 221 (1996), H. 1-4 Y1 - 1996 SN - 0921-4526 SP - 27 EP - 33 ER - TY - JOUR A1 - Förster, Arnold A1 - Kiesslich, G. A1 - Wacker, A. A1 - Scholl, E. T1 - Nonlinear charging effect of quantum dots in a p-i-n diode. Kiesslich, G.; Wacker, A.; Scholl, E.; Vitusevich, S.A.; Belyaev, A.E.; Danylyuk, S.V.; Forster, A.; Klein, N.; Henini, M. JF - Physical Review B. 68 (2003) Y1 - 2003 SN - 1550-235X N1 - 125331 (6 Seiten) ER - TY - JOUR A1 - Förster, Arnold A1 - Kicin, S A1 - Cambel, V. A1 - Kuliffayova, M. T1 - Fabrication of GaAs symmetric pyramidal mesas prepared by wet-chemical etching using AlAs interlayer. Kicin, S.; Cambel, V.; Kuliffayova, M.; Gregusova, D.; Kovacova, E.; Novak, J.; Kostic, I.; Forster, A. JF - Journal of Applied Physics. 91 (2002), H. 2 Y1 - 2002 SN - 1089-7550 SP - 878 EP - 880 ER - TY - JOUR A1 - Förster, Arnold A1 - Janssen, G. A1 - Roer, T. G. van de T1 - Logic Circuits with reduced complexity based on devices with higher functionality / G. Janssen ; T. G. van de Roer ; W. Prost ... A. Förster JF - Proceedings / STW/SAFE 2nd Annual Workshop on Semiconductor Advances for Future Electronics, Safe '99 - ProRISC/IEEE 10th Annual Workshop on Circuits, Systems and Signal Processing, ProRISC 99 : November 24 - 26, 1999, Mierlo, The Netherlands [Elektronische Ressource] Y1 - 1999 N1 - SAFE <2, 1999, Mierlo> ; Workshop on Circuits, Systems and Signal Processing <10, 1999, Mierlo> ; Stichting voor de Technische Wetenschappen SP - 219 PB - Technology Foundation, STW CY - Utrecht ER - TY - JOUR A1 - Förster, Arnold A1 - Indlekofer, K.M. A1 - Lüth, H. T1 - Density-matrix description of a quantum dot system with variable lateral confinement in the single-electron tunneling regime. Indlekofer, K.M.; Förster, A.; Lüth, H. JF - Physica B: Condensed Matter. 314 (2002), H. 1-4 Y1 - 2002 SN - 0921-4526 SP - 499 EP - 502 ER - TY - JOUR A1 - Förster, Arnold A1 - Indlekofer, K. A1 - Lange, J. T1 - Theory of single-electron tunneling in resonant-tunneling diodes including scattering and multiple subbands at finite temperature / K. M. Indlekofer ; J. Lange ; A. Förster ... JF - Physical review / B, Condensed matter and materials physics. 53 (1996), H. 11 Y1 - 1996 SN - 1095-3795 SP - 7392 EP - 7402 ER - TY - JOUR A1 - Förster, Arnold A1 - Hu, Quing A1 - Verghese, S. T1 - High-frequency (f ~ 1 THz) studies of quantum-effect devices / Qing Hu ; S. Verghese ; R. A. Wyss ... A. Förster JF - Semiconductor science and technology. 11 (1996), H. 12 Y1 - 1996 SN - 1361-6641 SP - 1888 EP - 1894 ER - TY - JOUR A1 - Förster, Arnold A1 - Hauke, M. A1 - Jakumeit, J. A1 - Krafft, B. T1 - DX Centers in Al0.3Ga0.7As/GaAs Analyzed by Point Contact Measurements. Hauke, M.; Jakumeit, J.; Krafft, B.; Nimtz, G.; Förster, A.; Lüth, H. JF - Journal of Applied Physics. 84 (1998), H. 4 Y1 - 1998 SN - 1089-7550 SP - 2034 EP - 2039 ER - TY - JOUR A1 - Förster, Arnold A1 - Hartmann, A. A1 - Dieker, Ch. A1 - Hollfelder, M. T1 - Spontaneous formation of tilted AlGaAS/GaAs superlattice during AlGaAs growth. Hartmann, A.; Dieker, Ch.; Hollfelder, M.; Hardtdegen, H.; Förster, A.; Lüth, H. JF - Applied Surface Science. 123-124 (1998) Y1 - 1998 SN - 0169-4332 N1 - = Proceedings of the Sixth International Conference on the Formation of Semiconductor Interfaces SP - 704 EP - 709 ER - TY - JOUR A1 - Förster, Arnold A1 - Hardtdegen, Hilde A1 - Ungermanns, C. T1 - Comparative investigation of electrical and optical characteristics of AlxGa1-xAs/GaAs structures deposited by LP-MOVPE and MBE / H. Hardtdegen ; M. Hollfelder ; C. Ungermanns ... A. Förster ... JF - Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141) Y1 - 1995 SN - 0-7503-0226-7 N1 - International Symposium on Compound Semiconductors <21, 1994, San Diego, Calif.> ; Institute of Physics SP - 81 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Griebel, M. A1 - Indlekofer, M. A1 - Lüth, H. T1 - Transport through a buried double barrier single electron transistor at low temperatures JF - Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4 Y1 - 1998 SN - 1386-9477 SP - 502 EP - 506 ER - TY - JOUR A1 - Förster, Arnold A1 - Griebel, M. A1 - Indlekofer, K.M. A1 - Lüth, H. T1 - Single electron transport in resonant tunnelling diodes laterally confined by ion implantation. Griebel, M.; Indlekofer, K.M.; Förster, A.; Lüth, H. JF - Journal of Physics D: Applied Physics. 32 (1999), H. 14 Y1 - 1999 SN - 1361-6463 SP - 1729 EP - 1733 ER - TY - JOUR A1 - Förster, Arnold A1 - Griebel, M. A1 - Indlekofer, K. M. A1 - Lüth, H. T1 - Transport properties of gated resonant tunneling diodes in the single electron regime. Griebel, M.; Indlekofer, K. M.; Förster, A.; Lüth, H. JF - Journal of Applied Physics. 84 (1998), H. 12 Y1 - 1998 SN - 1089-7550 SP - 6719 EP - 6724 ER - TY - JOUR A1 - Förster, Arnold A1 - Döhler, G. H A1 - Heber, J. T1 - Hot electrons in n-i-p.i-based devices / G. H. Döhler ; J. Heber ... A. Förster ... JF - Hot electrons in semiconductors : physics and devices / ed. by N. Balkan. - (Series on semiconductor science and technology ; 5) Y1 - 1998 SN - 0-19-850058-0 SP - 478 EP - 504 PB - Clarendon Press CY - Oxford ER - TY - JOUR A1 - Förster, Arnold A1 - Dubecky, F.. A1 - Darmo, J. T1 - Investigation of deep-level states in bulk and low temperature MBE semiinsulating GaAs by admittance transient spectroscopy / F. Dubecky ; J. Darmo ; M. Darviras ; A. Förster ... JF - Semi-insulating III-V materials, Ixtapa, Mexico 1992 : proceedings of the 7th Conference on Semi-insulating III-V Materials, Ixtapa, Mexico, 21 - 24 April 1992 / ed. by C. J. Miner ... Y1 - 1994 SN - 0-7503-0242-9 N1 - Conference on Semi-Insulating III-V Materials <7, 1992, Ixtapa> SP - 265 EP - 272 PB - Inst. of Physics Publ. CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Dieker, C. A1 - Gerthsen, D. T1 - Microstructure of the AlAs/GaAs and AlAs/InGaAs resonant tunneling diodes and its correlation with the electrical properties / C. Dieker ; D. Gerthsen ; A. Förster ... JF - Microscopy of semiconducting materials 1993 : proceedings of the Royal Microscopical Society Conference held at Oxford University, 5 - 8 April 1993 / ed. by A. G. Cullis ... - (Conference series / Institute of Physics ; 134) Y1 - 1993 SN - 0-7503-0290-9 N1 - Royal Microscopical Society Conference on Microscopy of Semiconducting Materials <8, 1993, Oxford> ; MSM <8, 1993, Oxford> SP - 253 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Dekorsy, T. A1 - Kim, A. T. M. T1 - Subpicosecond coherent carrier-phonon dynamics in semiconductor heterostructures / T. Dekorsy ; A. M. T. Kim ; G. C. Cho ... A. Förster JF - Physical review / B, Condensed matter and materials physics. 53 (1996), H. 3 Y1 - 1996 SN - 1095-3795 SP - 1531 EP - 1538 ER - TY - JOUR A1 - Förster, Arnold A1 - Darmo, J. A1 - Schafer, F. A1 - Kordos, P. T1 - Thermal resistance of the semiconductor structures for a photomixing device. Darmo, J.; Schafer, F.; Forster, A.; Kordos, P.; Gusten, R JF - Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza Y1 - 2002 SN - 0-7803-7276-X N1 - International Conference on Advanced Semiconductor Devices and Microsystems ; (4, 2002, Smolenice). ASDAM '02 ; (4 : ; 2002.10.14-16 : ; Smolenice) SP - 87 EP - 90 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Darmo, J. A1 - Dubecký, F. A1 - Kordos, P. T1 - Annealing characteristics of native defects in low-temperature-grown MBE GaAs / J. Darmo ; F. Dubecky ; P. Kordos ; A. Förster JF - Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE] Y1 - 1996 SN - 0-7803-3095-1 N1 - 2. ISBN: 0-7803-3179-6 ; Conference on Semiconducting and Insulating Materials <9, 1996, Toulouse> ; Institute of Electrical and Electronics Engineers ; IEEE Cat. No.96CH35881 SP - 67 EP - ff. CY - Piscataway, NJ [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Darmo, J. A1 - Dubecký, F. A1 - Kordos, P. T1 - Deep-level states and electrical properties of GaAs grown at 250 °C / J. Darmo ; F. Dubecký ; P. Kordos ; A. Förster ... JF - Materials science and engineering B: Solid– state materials for advanced technology. 28 (1994), H. 1-3 Y1 - 1994 SN - 0921-5107 SP - 393 EP - 396 ER - TY - JOUR A1 - Förster, Arnold A1 - Darmo, J. A1 - Dubecky, F. A1 - Kordos, P. T1 - Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs. Darmo, J.; Dubecky, F.; Kordos, P.; Förster, A. JF - Applied Physics Letters. 72 (1998), H. 5 Y1 - 1998 SN - 1077-3118 SP - 590 EP - 592 ER - TY - JOUR A1 - Förster, Arnold A1 - Cambel, V. A1 - Kicin, S. A1 - Kuliffayová, M. T1 - Preparation of patterned GaAs structures for MEMS and MOEMS. Cambel, V.; Kicin, S.; Kuliffayová, M.; Kovácová, E.; Novák, J.; Kostic, I.; Förster, A. JF - Materials Science and Engineering: C. 19 (2002), H. 2 Y1 - 2002 SN - 0928-4931 SP - 161 EP - 165 ER - TY - JOUR A1 - Förster, Arnold A1 - Brugger, H. A1 - Meiners, U. A1 - Diniz, R. T1 - Hydrostatic pressure sensors based on solid state tunneling devices / H. Brugger; U. Meiners ; R. Diniz ... A. Förster ... JF - Solid state electronics. 37 (1994), H. 4-6 Y1 - 1994 SN - 0038-1101 SP - 801 EP - 804 ER - TY - JOUR A1 - Förster, Arnold A1 - Brugger, H. A1 - Meiners, U. T1 - High quality GaAs-based resonant tunneling diodes for high frequency device applications / H. Brugger ; U. Meiners ; C. Wölk ... A. Förster ... JF - Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman Y1 - 1991 SN - 0-7803-0491-8 N1 - Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits <1991, Ithaca, NY> SP - 39 EP - ff. PB - Inst. of Electrical and Electronics Engineers CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Betko, J. A1 - Morvic, M. A1 - Novak, J. T1 - Magnetoresistance in low-temperature grown molecular-beam epitaxial GaAs. Betko, J.; Morvic, M.; Novak, J.; Förster, A.; Kordos, P. JF - Journal of Applied Physics. 86 (1999), H. 11 Y1 - 1999 SN - 1089-7550 SP - 6243 EP - 6248 ER - TY - JOUR A1 - Förster, Arnold A1 - Betko, J. A1 - Morvic, M. A1 - Novak, J. T1 - Hall mobility analysis in low-temperature-grown molecular-beam epitaxial GaAs / J. Betko , M. Morvic ; J. Novák ... A. Förster ... JF - Applied physics letters. 69 (1996), H. 17 Y1 - 1996 SN - 0003-6951 N1 - ISSN der E-Ausg.: 1077-3118 SP - 2563 EP - 2565 ER - TY - JOUR A1 - Förster, Arnold A1 - Betko, J. A1 - Kordos, P. A1 - Kuklovsky, S. T1 - Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature / J. Betko ; P. Kordos ; S. Kuklovsky ; A. Förster ... JF - Materials science and engineering B: Solid– state materials for advanced technology. 28 (1994), H. 1-3 Y1 - 1994 SN - 0921-5107 SP - 147 EP - 150 ER - TY - JOUR A1 - Förster, Arnold A1 - Bertuccio, G. A1 - Pullia, A. T1 - Pixel X-ray detectors in epitaxial gallium arsenide withhigh-energy resolution capabilities (Fano factor experimentaldetermination) / G. Bertuccio ; A. Pullia ; J. Lauter ; A. Förster ... JF - IEEE transactions on nuclear science. 44 (1997), H. 1 Y1 - 1997 SN - 0018-9499 SP - 1 EP - 5 ER - TY - JOUR A1 - Förster, Arnold A1 - Belyaev, A. E. A1 - Vitusevich, S.A. A1 - Eaves, L. T1 - Photoresponse spectra in p-i-n diodes containing quantum dots. Belyaev, A.E.; Vitusevich, S.A.; Eaves, L.; Main, P.C.; Henini, M.; Förster, A.; Reetz, W.; Danylyuk, S.V. JF - Nanotechnology. 13 (2002), H. 1 Y1 - 2002 SP - 94 EP - 96 ER - TY - JOUR A1 - Förster, Arnold A1 - Appenzeller, J. A1 - Schroer, C. T1 - Electron interference in a T-shaped quantum transistor based on Schottky-gate technology / J. Appenzeller ; Ch. Schroer ; Th. Schäpers ... A. Förster ... JF - Physical review / B, Condensed matter and materials physics. 53 (1996), H. 15 Y1 - 1996 SN - 1095-3795 SP - 9959 EP - 9963 ER - TY - JOUR A1 - Förster, Arnold A1 - Adam, R. A1 - Mikulics, M. A1 - Schelten, J. T1 - Fabrication and subpicosecond optical response of low-temperature-grown GaAs freestanding photoconductive devices. Adam, R.; Mikulics, M.; Forster, A.; Schelten, J.; Siegel, M.; Kordos, P.; Zheng, X.; Wu, S.; Sobolewski, R. JF - Applied Physics Letters. 81 (2002), H. 18 Y1 - 2002 SN - 1077-3118 SP - 3485 EP - 3487 ER - TY - JOUR A1 - Förster, Arnold T1 - Ultrahigh frequency measurements of magnetic penetration length and surface impedance of YBa2Cu3O7–x microstriplines on Si and GaAs substrates . Rüders, F; Hollricher, O.; Copetti, C. A. ; Förster, A. ; Buchal, Ch. ; Prusseit, W. ; Kinder, H. JF - Journal of Applied Physics. 77 (1995), H. 10 Y1 - 1995 SN - 1089-7550 SP - 5282 EP - 5286 ER - TY - JOUR A1 - Förster, Arnold T1 - Layer Deposition I JF - Fundamentals of nanoelectronics / Stefan Blügel ... (ed.). - (Lecture manuscripts of the ... Spring School of the Department of Solid State Research ; 34). - (Schriften des Forschungszentrums Jülich : Materie und Material ; 14 ; 34) Y1 - 2003 SN - 3-89336-319-X SP - C2.1 EP - C2.13 PB - Forschungszentrum, Zentralbibliothek CY - Jülich ER - TY - JOUR A1 - Förster, Arnold T1 - Resonant tunneling diodes operating as modern quantum transport devices JF - Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices : (December 14 - 18, 1999) / ed.: Vikram Kumar ... - Vol. 2 Y1 - 2000 SN - 81-7023-998-2 N1 - International Workshop on the Physics of Semiconductor Devices <10, 1999, Delhi> SP - 966 EP - 966 PB - Allied Publ. CY - New Delhi [u.a.] ER - TY - JOUR A1 - Förster, Arnold T1 - Resonant tunneling diodes : the effect of structural properties on their performance JF - Festkörperprobleme = Advances in solid state physics. 33 (1994) Y1 - 1994 SN - 0065-3357 N1 - Review ; 2. ISSN: 0430-3393 SP - 37 EP - 62 ER - TY - JOUR A1 - Frauenrath, Tobias A1 - Hezel, Fabian A1 - Heinrichs, Uwe A1 - Kozerke, Sebastian A1 - Utting, Jane A1 - Kob, Malte A1 - Butenweg, Christoph A1 - Boesiger, Peter A1 - Niendorf, Thoralf T1 - Feasibility of Cardiac Gating Free of Interference With Electro-Magnetic Fields at 1.5 Tesla, 3.0 Tesla and 7.0 Tesla Using an MR-Stethoscope JF - Investigative Radiology KW - phonocardiogram KW - electrocardiogram KW - cardiac gating KW - high field MR imaging KW - cardiovascular MR imaging Y1 - 2009 U6 - http://dx.doi.org/10.1097/RLI.0b013e3181b4c15e SN - 1536-0210 (online) SN - 0020-9996 (gedruckt) VL - 44 IS - 9 SP - 539 EP - 547 PB - Lippincott Williams & Wilkins ; (via Ovid) CY - Philadelphia, Pa ER - TY - JOUR A1 - Fleischhaker, Robert A1 - Krauß, Nico A1 - Schättiger, Farina A1 - Dekorsy, Thomas T1 - Consistent characterization of semiconductor saturable absorber mirrors with singe-pulse and pump-probe spectroscopy JF - Optics Express Y1 - 2013 U6 - http://dx.doi.org/10.1364/OE.21.006764 SN - 1094-4087 VL - 21 IS - 6 SP - 6764 EP - 6776 PB - Optica CY - Washington, DC ER - TY - JOUR A1 - Fleischhaker, Robert A1 - Evers, Jörg A1 - Dey, Tarak N. T1 - Phase modulation induced by cooperative effects in electromagnetically induced transparency JF - Physical Review A - Atomic, molecular, and optical physics N2 - We analyze the influence of dipole-dipole interactions in an electromagnetically induced transparency set up for a density at the onset of cooperative effects. To this end, we include mean-field models for the influence of local-field corrections and radiation trapping into our calculation. We show both analytically and numerically that the polarization contribution to the local field strongly modulates the phase of a weak pulse. We give an intuitive explanation for this local-field-induced phase modulation and demonstrate that it distinctively differs from the nonlinear self-phase-modulation that a strong pulse experiences in a Kerr medium. Y1 - 2010 U6 - http://dx.doi.org/10.1103/PhysRevA.82.013815 SN - 1050-2947 VL - 82 IS - 1 PB - AIP Publishing CY - Melville, NY ER - TY - JOUR A1 - Fleischhaker, Robert A1 - Evers, Jörg T1 - A Maxwell–Schrödinger solver for quantum optical few-level systems JF - Computer Physics Communications N2 - The msprop program presented in this work is capable of solving the Maxwell–Schrödinger equations for one or several laser fields propagating through a medium of quantum optical few-level systems in one spatial dimension and in time. In particular, it allows to numerically treat systems in which a laser field interacts with the medium with both its electric and magnetic component at the same time. The internal dynamics of the few-level system is modeled by a quantum optical master equation which includes coherent processes due to optical transitions driven by the laser fields as well as incoherent processes due to decay and dephasing. The propagation dynamics of the laser fields is treated in slowly varying envelope approximation resulting in a first order wave equation for each laser field envelope function. The program employs an Adams predictor formula second order in time to integrate the quantum optical master equation and a Lax–Wendroff scheme second order in space and time to evolve the wave equations for the fields. The source function in the Lax–Wendroff scheme is specifically adapted to allow taking into account the simultaneous coupling of a laser field to the polarization and the magnetization of the medium. To reduce execution time, a customized data structure is implemented and explained. In three examples the features of the program are demonstrated and the treatment of a system with a phase-dependent cross coupling of the electric and magnetic field component of a laser field is shown. Y1 - 2011 U6 - http://dx.doi.org/10.1016/j.cpc.2010.10.018 SN - 0010-4655 VL - 182 IS - 3 SP - 739 EP - 747 PB - Elsevier CY - Amsterdam ER - TY - JOUR A1 - Fleischhaker, Robert A1 - Evers, Jörg T1 - Nonlinear effects in pulse propagation through Doppler-broadened closed-loop atomic media JF - Physical Review A - Atomic, molecular, and optical physics Y1 - 2008 U6 - http://dx.doi.org/10.1103/PhysRevA.77.043805 SN - 1050-2947 VL - 77 IS - 4 SP - 043805 ER - TY - JOUR A1 - Fleischhaker, Robert A1 - Evers, Jörg T1 - Four-wave mixing enhanced white-light cavity JF - Physical Review A - Atomic, molecular, and optical physics Y1 - 2008 SN - 0556-2791 VL - 78 IS - 5 SP - 051802(R) ER - TY - JOUR A1 - Fischer, W. A. A1 - Dören, Horst-Peter A1 - Janke, Dieter T1 - Aluminium nitride probes for application in iron melts JF - Archiv für das Eisenhüttenwesen. 52 (1981), H. 3 Y1 - 1981 SN - 0003-8962 SP - 91 EP - 98 ER - TY - JOUR A1 - Ewe, Hendrik A1 - Klein, Peter A1 - Pieper, Martin A1 - Füldner, G. T1 - Heat conductivity in sintered aluminium fibers JF - Cellular metals for structural and functional applications : CELLMET 2008 ; proceedings of the International Symposium on Cellular Metals for Structural and Functional Applications held October 8 - 10, 2008 in Dresden, Germany / ed. by Günter Stephani Y1 - 2009 SP - 187 EP - 193 PB - Fraunhofer IFAM CY - Dresden ER - TY - JOUR A1 - Edip, Kemal A1 - Garevski, Mihail A1 - Butenweg, Christoph A1 - Sesov, Vlatko A1 - Cvetanovska, Julijana A1 - Gjorgiev, Igor T1 - Numerical simulation of geotechnical problems by coupled finite and infinite elements JF - Journal of civil engineering and architecture Y1 - 2013 SN - 1934-7359 (E-Journal) VL - 7 IS - 1 SP - 68 EP - 77 PB - David Publishing CY - Libertyville ER - TY - JOUR A1 - Edip, K. A1 - Sesov, V. A1 - Butenweg, Christoph A1 - Bojadjieva, J. T1 - Development of coupled numerical model for simulation of multiphase soil JF - Computers and Geotechnics N2 - In this paper, a coupled multiphase model considering both non-linearities of water retention curves and solid state modeling is proposed. The solid displacements and the pressures of both water and air phases are unknowns of the proposed model. The finite element method is used to solve the governing differential equations. The proposed method is demonstrated through simulation of seepage test and partially consolidation problem. Then, implementation of the model is done by using hypoplasticity for the solid phase and analyzing the fully saturated triaxial experiments. In integration of the constitutive law error controlling is improved and comparisons done accordingly. In this work, the advantages and limitations of the numerical model are discussed. Y1 - 2018 U6 - http://dx.doi.org/10.1016/j.compgeo.2017.08.016 SN - 0266-352X VL - 96 SP - 118 EP - 131 PB - Elsevier CY - Amsterdam ER - TY - JOUR A1 - Dotzauer, Martin A1 - Pfeiffer, Diana A1 - Lauer, Markus A1 - Pohl, Marcel A1 - Mauky, Eric A1 - Bär, Katharina A1 - Sonnleitner, Matthias A1 - Zörner, Wilfried A1 - Hudde, Jessica A1 - Schwarz, Björn A1 - Faßauer, Burkhardt A1 - Dahmen, Markus A1 - Rieke, Christian A1 - Herbert, Johannes A1 - Thrän, Daniela T1 - How to measure flexibility – Performance indicators for demand driven power generation from biogas plants JF - Renewable Energy Y1 - 2019 U6 - http://dx.doi.org/10.1016/j.renene.2018.10.021 SN - 0960-1481 SP - 135 EP - 146 PB - Elsevier CY - Amsterdam ER - TY - JOUR A1 - Dellmann, Sophia Florence A1 - Glorius, J. A1 - Litvinov, Yu A. A1 - Reifarth, R. A1 - Al-Khasawneh, Kafa A1 - Aliotta, M. A1 - Bott, L. A1 - Brückner, Benjamin A1 - Bruno, C. G. A1 - Chen, Ruijiu A1 - Davinson, T. A1 - Dickel, T. A1 - Dillmann, Iris A1 - Dmytriev, D. A1 - Erbacher, P. A1 - Freire-Fernández, D. A1 - Forstner, Oliver A1 - Geissel, H. A1 - Göbel, K. A1 - Griffin, Christopher J. A1 - Grisenti, R. A1 - Gumberidze, Alexandre A1 - Haettner, Emma A1 - Hagmann, Siegbert A1 - Heil, M. A1 - Heß, R. A1 - Hillenbrand, P.-M. A1 - Joseph, R. A1 - Jurado, B. A1 - Kozhuharov, Christophor A1 - Kulikov, I. A1 - Löher, Bastian A1 - Langer, Christoph A1 - Leckenby, Guy A1 - Lederer-Woods, C. A1 - Lestinsky, M. A1 - Litvinov, S. A. A1 - Lorenz, B. A. A1 - Lorenz, E. A1 - Marsh, J. A1 - Menz, Esther Babette A1 - Morgenroth, T. A1 - Petridis, N. A1 - Pibernat, Jerome A1 - Popp, U. A1 - Psaltis, Athanasios A1 - Sanjari, Shahab A1 - Scheidenberger, C. A1 - Sguazzin, M. A1 - Sidhu, Ragandeep Singh A1 - Spillmann, Uwe A1 - Steck, M. A1 - Stöhlker, T. A1 - Surzhykov, A. A1 - Swartz, J. A. A1 - Törnqvist, H. A1 - Varga, L. A1 - Vescovi, Diego A1 - Weick, H. A1 - Weigand, M. A1 - Woods, P. A1 - Xing, Y. A1 - Yamaguchi, Taiyo T1 - Proton capture on stored radioactive ¹¹⁸Te ions JF - EPJ Web of Conferences N2 - Experimental determination of the cross sections of proton capture on radioactive nuclei is extremely difficult. Therefore, it is of substantial interest for the understanding of the production of the p-nuclei. For the first time, a direct measurement of proton-capture cross sections on stored, radioactive ions became possible in an energy range of interest for nuclear astrophysics. The experiment was performed at the Experimental Storage Ring (ESR) at GSI by making use of a sensitive method to measure (p,γ) and (p,n) reactions in inverse kinematics. These reaction channels are of high relevance for the nucleosyn-thesis processes in supernovae, which are among the most violent explosions in the universe and are not yet well understood. The cross section of the ¹¹⁸Te(p,γ) reaction has been measured at energies of 6 MeV/u and 7 MeV/u. The heavy ions interacted with a hydrogen gas jet target. The radiative recombination process of the fully stripped ¹¹⁸Te ions and electrons from the hydrogen target was used as a luminosity monitor. An overview of the experimental method and preliminary results from the ongoing analysis will be presented. Y1 - 2023 U6 - http://dx.doi.org/10.1051/epjconf/202327911018 SN - 2100-014X N1 - Volume 279, 2023. Nuclear Physics in Astrophysics – X (NPA-X 2022). VL - 279 IS - Article Number: 11018 SP - 1 EP - 5 PB - EDP Sciences ER -