TY  - JOUR
A1  - Bragard, Michael
A1  - Conrad, M.
A1  - van Hoek, H.
A1  - De Doncker, R. W.
T1  - The integrated emitter turn-off thyristor (IETO) : an innovative thyristor-based high power semiconductor device using MOS assisted turn-off
JF  - IEEE transactions on industry applications
Y1  - 2011
U6  - http://dx.doi.org/10.1109/TIA.2011.2161432
SN  - 0093-9994
VL  - 47
IS  - 5
SP  - 2175
EP  - 2182
PB  - IEEE
CY  - New York
ER  - 
TY  - JOUR
A1  - Bragard, Michael
A1  - van Hoek, H.
A1  - De Doncker, R. W.
T1  - A major design step in IETO concept realization that allows overcurrent protection and pushes limits of switching performance
JF  - IEEE transactions on power electronics
N2  - This paper presents the latest prototype of the integrated emitter turn-off thyristor concept, which potentially ranks among thyristor high-power devices like the gate turn-off thyristor and the integrated gate-commutated thyristor (IGCT). Due to modifications of the external driver stage and mechanical press-pack design optimization, this prototype allows for full device characterization. The turn-off capability was increased to 1600 A with an active silicon area of 823mm2 . This leads to a transient peak power of 672.1kW/cm² . Within this paper, measurements and concept assessment are presented and a comparison to state-of-the-art IGCT devices is provided.
Y1  - 2012
U6  - http://dx.doi.org/10.1109/TPEL.2012.2189136
SN  - 0885-8993
VL  - 27
IS  - 9
SP  - 4163
EP  - 4171
PB  - IEEE
CY  - New York
ER  -