TY  - JOUR
A1  - Förster, Arnold
A1  - Darmo, J.
A1  - Dubecký, F.
A1  - Kordos, P.
T1  - Annealing characteristics of native defects in low-temperature-grown MBE GaAs / J. Darmo ; F. Dubecky ; P. Kordos ; A. Förster
JF  - Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE]
Y1  - 1996
SN  - 0-7803-3095-1
N1  - 2. ISBN: 0-7803-3179-6 ; Conference on Semiconducting and Insulating Materials <9, 1996, Toulouse> ; Institute of Electrical and Electronics Engineers ; IEEE Cat. No.96CH35881
SP  - 67
EP  - ff.
CY  - Piscataway, NJ [u.a.]
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Montanari, Simone
A1  - Lepsa, Mihail Ion
A1  - Lüth, Hans
T1  - High frequency investigation of graded gap injectors for GaAs Gunn diodes / Simone Montanari ; Arnold Förster ; Mihail Ion Lepsa ; Hans Lüth
JF  - Solid-state electronics. 49 (2005), H. 2
Y1  - 2005
SN  - 0038-1101
SP  - 245
EP  - 250
ER  - 
TY  - JOUR
A1  - Mikulics, M.
A1  - Marso, M.
A1  - Cámara Mayorga, I.
A1  - Gusten, R.
A1  - Stancek, S.
A1  - Michael, E. A.
A1  - Schieder, R.
A1  - Wolter, M.
A1  - Buca, D.
A1  - Förster, Arnold
A1  - Kordos, P.
A1  - Lüth, H.
T1  - Photomixers fabricated on nitrogen-ion-implanted GaAs
JF  - Applied physics letters. 87 (2005)
Y1  - 2005
SP  - 041106-1
EP  - 041106-3
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Mikulics, M.
A1  - Wu, S.
A1  - Marso, M.
T1  - Ultrafast and Highly Sensitive Photodetectors With Recessed Electrodes Fabricated on Low-Temperature-Grown GaAs. Mikulics, M.; Wu, S.; Marso, M.; Adam, R.; Förster, A.; van der Hart, A.; Kordos, P.; Lüth, H.; Sobolewski, R.
JF  - IEEE Photonics Technology Letters. 18 (2006), H. 7
Y1  - 2006
SP  - 820
EP  - 822
ER  - 
TY  - JOUR
A1  - Förster, Arnold
T1  - Ultrahigh frequency measurements of magnetic penetration length and surface impedance of YBa2Cu3O7–x microstriplines on Si and GaAs substrates . Rüders, F; Hollricher, O.;  Copetti, C. A. ; Förster,  A. ; Buchal, Ch. ; Prusseit, W.  ; Kinder, H.
JF  - Journal of Applied Physics. 77 (1995), H. 10
Y1  - 1995
SN  - 1089-7550
SP  - 5282
EP  - 5286
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Hauke, M.
A1  - Jakumeit, J.
A1  - Krafft, B.
T1  - DX Centers in Al0.3Ga0.7As/GaAs Analyzed by Point Contact Measurements. Hauke, M.; Jakumeit, J.; Krafft, B.; Nimtz, G.; Förster, A.; Lüth, H.
JF  - Journal of Applied Physics. 84 (1998), H. 4
Y1  - 1998
SN  - 1089-7550
SP  - 2034
EP  - 2039
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Griebel, M.
A1  - Indlekofer, K. M.
A1  - Lüth, H.
T1  - Transport properties of gated resonant tunneling diodes in the single electron regime. Griebel, M.; Indlekofer,  K. M.; Förster, A.; Lüth, H.
JF  - Journal of Applied Physics. 84 (1998), H. 12
Y1  - 1998
SN  - 1089-7550
SP  - 6719
EP  - 6724
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lachenmann, S. G.
A1  - Kastalsky, A.
A1  - Uhlisch, D.
T1  - Hybrid superconductor/semiconductor step junction with three terminals. Lachenmann, S. G.; Kastalsky, A.; Förster A.; Uhlisch, D.; Neurohr, K.; Schäpers, Th.
JF  - Journal of Applied Physics. 83 (1998), H. 12
Y1  - 1998
SN  - 1089-7550
SP  - 8077
EP  - 8079
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Darmo, J.
A1  - Dubecky, F.
A1  - Kordos, P.
T1  - Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs. Darmo, J.; Dubecky, F.; Kordos, P.; Förster, A.
JF  - Applied Physics Letters. 72 (1998), H. 5
Y1  - 1998
SN  - 1077-3118
SP  - 590
EP  - 592
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Mikulics, M.
A1  - Marso, M.
A1  - Adam, R.
T1  - Low-temperature-grown MBE GaAs for terahertz photomixers. Mikulics, M.; Marso, M.; Adam, R.; Fox, A.; Buca, D.; Förster, A.; Kordos, P.; Xu, Y.; Sobolewski, R.
JF  - 2001 Symposium on Electron Devices for Microwave and Optoelectronic Applications ; [Vienna University of Technology, Institute of Electrical Measurements and Circuit Design, 15 - 16 November 2001, Vienna, Austria ; proceedings] / EDMO 2001. Organised by: Institute of Electrical Measurements and Circuit Design, Vienna University of Technology, Austria. With technical co-sponsorship from IEEE Electron Devices Society
Y1  - 2001
SN  - 078037049X
N1  - IEEE catalog number: 01TH8567
SP  - 155
EP  - 155
PB  - IEEE Operations Center
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Krafft, B.
A1  - Förster, Arnold
A1  - Hart, A. van der
A1  - Schäpers, T.
T1  - Control of Aharonov-Bohm oscillations in a AlGaAs/GaAs ring by asymmetric and symmetric gate biasing
JF  - Physica E: Low-dimensional Systems and Nanostructures. 9 (2001), H. 4
Y1  - 2001
SN  - 1386-9477
SP  - 635
EP  - 641
ER  - 
TY  - JOUR
A1  - Vitusevich, S. A.
A1  - Förster, Arnold
A1  - Lüth, H.
A1  - Belyaev, A. E.
A1  - Danylyuk, S. V.
A1  - Konakova, R. V.
A1  - Sheka, D. I.
T1  - Resonant spectroscopy of electric-field-induced superlattices
JF  - Journal of Applied Physics. 90 (2001), H. 6
Y1  - 2001
SN  - 1089-7550
U6  - http://dx.doi.org/10.1063/1.1392956
SP  - 2857
EP  - 2861
ER  - 
TY  - JOUR
A1  - Stock, J.
A1  - Malindretos, J.
A1  - Indlekofer, K.M.
A1  - Pöttgens, Michael
A1  - Förster, Arnold
A1  - Lüth, Hans
T1  - A Vertical Resonant Tunneling Transistor for Application in Digital Logic Circuits
JF  - IEEE Transactions on Electron Devices (T-ED). 48 (2001), H. 6
Y1  - 2001
SN  - 0018-9383
SP  - 1028
EP  - 1032
ER  - 
TY  - JOUR
A1  - Hodel, U.
A1  - Orzati, A.
A1  - Marso, M.
A1  - Homann, O.
A1  - Fox, A.
A1  - Hart, A. v. d.
A1  - Förster, Arnold
A1  - Kordos, P.
A1  - Lüth, H.
T1  - A novel InAlAs/InGaAs layer structure for monolithically integrated photoreceiver
JF  - Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials
Y1  - 2000
SN  - 0-7803-6320-5
N1  - International Conference on Indium Phosphide and Related Materials <12, 2000, Williamsburg, Va.>
SP  - 466
EP  - 469
PB  - IEEE Service Center
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Hoskens, R.C.P.
A1  - Roer, T.G. van de
A1  - Tolstikhin, V.I.
A1  - Förster, Arnold
T1  - Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation
JF  - LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2
Y1  - 2000
SN  - 0-7803-5947-X
N1  - 2000 IEEE LEOS annual meeting
SP  - 444
EP  - 445
PB  - IEEE Service Center
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Hoskens, R. C. P.
A1  - Tolstikhin, V.I.
A1  - Förster, Arnold
A1  - Roer, T.G. van de
T1  - Vertically integrated transistor-laser structure, take 2
JF  - WOCSDICE  2000, 24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe : May 29 - June 02, 2000, Aegean Sea, Greece.
Y1  - 2000
SN  - 0970311109
N1  - WOCSDICE ; (24, 2000) Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe ; (24 : ; 2000.05.29-06.02)
PB  - Univ. of Michigan
CY  - Ann Arbor, Mich.
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Stock, J.
A1  - Indlekofer, K. M.
T1  - Perspectives of resonant tunneling diodes
JF  - Recent research developments in materials science & engineering/ 1,2
Y1  - 2002
SN  - 81-7895-057-X
N1  - Nebent.: Materials science & engineering
SP  - 527
EP  - 556
PB  - Transworld Research Network
CY  - Trivandrum, India
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Indlekofer, K.M.
A1  - Lüth, H.
T1  - Density-matrix description of a quantum dot system with variable lateral confinement in the single-electron tunneling regime. Indlekofer, K.M.; Förster, A.; Lüth, H.
JF  - Physica B: Condensed Matter. 314 (2002), H. 1-4
Y1  - 2002
SN  - 0921-4526
SP  - 499
EP  - 502
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Belyaev, A. E.
A1  - Vitusevich, S.A.
A1  - Eaves, L.
T1  - Photoresponse spectra in p-i-n diodes containing quantum dots. Belyaev, A.E.; Vitusevich, S.A.; Eaves, L.; Main, P.C.; Henini, M.; Förster, A.; Reetz, W.; Danylyuk, S.V.
JF  - Nanotechnology. 13 (2002), H. 1
Y1  - 2002
SP  - 94
EP  - 96
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kicin, S
A1  - Cambel, V.
A1  - Kuliffayova, M.
T1  - Fabrication of GaAs symmetric pyramidal mesas prepared by wet-chemical etching using AlAs interlayer. Kicin, S.; Cambel, V.; Kuliffayova, M.; Gregusova, D.; Kovacova, E.; Novak, J.; Kostic, I.; Forster, A.
JF  - Journal of Applied Physics. 91 (2002), H. 2
Y1  - 2002
SN  - 1089-7550
SP  - 878
EP  - 880
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Cambel, V.
A1  - Kicin, S.
A1  - Kuliffayová, M.
T1  - Preparation of patterned GaAs structures for MEMS and MOEMS. Cambel, V.; Kicin, S.; Kuliffayová, M.; Kovácová, E.; Novák, J.; Kostic, I.; Förster, A.
JF  - Materials Science and Engineering: C. 19 (2002), H. 2
Y1  - 2002
SN  - 0928-4931
SP  - 161
EP  - 165
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Malindretos, Jörg
A1  - Indlekofer, Klaus Michael
A1  - Lepsa, Mihail Ion
T1  - Homogeneity analysis of ion-implanted resonant tunnelling diodes for applications in digital logic circuits. Malindretos, Jörg; Förster, Arno; Indlekofer, Klaus Michael; Lepsa, Mihail Ion; Hardtdegen, Hilde; Schmidt, Roland; Luth, Hans
JF  - Superlattices and Microstructures. 31 (2002), H. 6
Y1  - 2002
SN  - 0749-6036
SP  - 315
EP  - 325
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Darmo, J.
A1  - Schafer, F.
A1  - Kordos, P.
T1  - Thermal resistance of the semiconductor structures for a photomixing device. Darmo, J.; Schafer, F.; Forster, A.; Kordos, P.; Gusten, R
JF  - Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza
Y1  - 2002
SN  - 0-7803-7276-X
N1  - International Conference on Advanced Semiconductor Devices and Microsystems ; (4, 2002, Smolenice). ASDAM '02 ; (4 : ; 2002.10.14-16 : ; Smolenice)
SP  - 87
EP  - 90
PB  - IEEE Operations Center
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Mikulics, M.
A1  - Siebe, F.
A1  - Fox, A.
T1  - Generation of 460 GHz radiation by photomixing in low-temperature-grown MBE GaAs. Mikulics, M.; Siebe, F.; Fox, A.; Marso, M.; Forster, A.; Stuer, H.; Schafer, F.; Gusten, R.; Kordos, P.
JF  - Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza
Y1  - 2002
SN  - 0-7803-7276-X
N1  - International Conference on Advanced Semiconductor Devices and Microsystems ; (4, 2002, Smolenice). ASDAM '02 ; (4 : ; 2002.10.14-16 : ; Smolenice)
SP  - 129
EP  - 132
PB  - IEEE Operations Center
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Vitusevich, S. A.
A1  - Belyaev, A. E.
A1  - Sheka, D. I.
T1  - Resonant tunneling effect in a periodically modulated electrical field. Vitusevich, S.A.; Forster, A.; Belyaev, A.E.; Sheka, D.I.; Luth, H.; Klein, N.; Danylyuk, S.V.; Konakova, R.
JF  - Proceedings of the Tenth International Conference on Modulated Semiconductor Structures : held at the Johannes Kepler University, Linz, Austria, July 23 - 27, 2001 / MSS 10. Guest ed.: Günther Bauer ...
Y1  - 2002
N1  - International  Conference  on Modulated Semiconductor Structures ; (10, 2001, Linz). Zugleich: Physica E: Low-dimensional Systems and Nanostructures. 13(2002)2-4. ISSN 1386-9477
SP  - 811
EP  - 813
PB  - Elsevier
CY  - Amsterdam [u.a.]
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Adam, R.
A1  - Mikulics, M.
A1  - Schelten, J.
T1  - Fabrication and subpicosecond optical response of low-temperature-grown GaAs freestanding photoconductive devices. Adam, R.; Mikulics, M.; Forster, A.; Schelten, J.; Siegel, M.; Kordos, P.; Zheng, X.; Wu, S.; Sobolewski, R.
JF  - Applied Physics Letters. 81 (2002), H. 18
Y1  - 2002
SN  - 1077-3118
SP  - 3485
EP  - 3487
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lachenmann, S. G.
A1  - Fridrich, I.
A1  - Schäpers, T.
T1  - Supression of the surface-inversion layer of p-type InAs. Lachenmann, S. G.; Fridrich, I.; Förster, A.; Schäpers, Th.
JF  - Journal of Applied Physics. 85 (1999), H. 12
Y1  - 1999
SN  - 1089-7550
SP  - 8242
EP  - 8246
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Zamdmer, N.
A1  - Hu, Qing
A1  - McIntosh, K. A.
T1  - On-chip frequency domain submillimeter-wave transceiver. Zamdmer, N.; Hu, Qing ;  McIntosh K. A. ; Verghise, S. ; Förster, A.
JF  - Applied Physics Letters. 75 (1999), H. 24
Y1  - 1999
SN  - 1077-3118
SP  - 3877
EP  - 3879
ER  - 
TY  - JOUR
A1  - Tillmann, K.
A1  - Förster, Arnold
T1  - Critical dimensions for the formation of interfacial misfit dislocations of In0.6Ga0.4As islands on GaAs(001)
JF  - Thin Solid Films. 368 (2000), H. 1
Y1  - 2000
SN  - 0040-6090
SP  - 93
EP  - 104
ER  - 
TY  - JOUR
A1  - Vitusevich, S. A.
A1  - Förster, Arnold
A1  - Reetz, W.
A1  - Lüth, H.
A1  - Belyaev, A. E.
A1  - Danylyuk, S. V.
T1  - Spectral Responsivity of single-quantum-well photodetectors
JF  - Applied Physics Letters. 77 (2000), H. 1
Y1  - 2000
SN  - 1077-3118
SP  - 16
EP  - 18
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Rosenauer, A.
A1  - Oberst, W.
A1  - Gerthsen, D.
T1  - Atomic scale analysis of the indium distribution in InGaAs/GaAs (001) heterostructures: segregation, lateral indium redistribution and the effect of growth interruptions. Rosenauer, A. ; Oberst, W. ; Gerthsen, D. ; Förster, A.
JF  - Thin Solid Films. 357 (1999)
Y1  - 1999
SN  - 0040-6090
SP  - 18
EP  - 21
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Zamdmer, N.
A1  - Hu, Qing
A1  - Verghese, S.
T1  - Mode-Discriminating Photoconductor and Coplanar Wave-Guide Circuits for Picosecond Sampling. Zamdmer, N.; Hu, Qing ; Verghese, S. ; Förster, A.
JF  - Applied Physics Letters. 74 (1999), H. 7
Y1  - 1999
SN  - 1077-3118
SP  - 1039
EP  - 1041
ER  - 
TY  - JOUR
A1  - Vitusevich, S. A.
A1  - Förster, Arnold
A1  - Indlekofer, K.-M.
A1  - Lüth, H.
A1  - Belyaev, A. E.
A1  - Glavin, B. A.
A1  - Konakova, R. V.
T1  - Tunneling Through X-Valley-Related Impurity States in GaAs/AlAs Resonant-Tunneling Diodes
JF  - Physical  Review . B. 61 (2000), H. 16
Y1  - 2000
SN  - 1550-235X
SP  - 10898
EP  - 10904
ER  - 
TY  - JOUR
A1  - Förster, Arnold
T1  - Layer Deposition I
JF  - Fundamentals of nanoelectronics / Stefan Blügel ... (ed.). - (Lecture manuscripts of the ... Spring School of the Department of Solid State Research ; 34). - (Schriften des Forschungszentrums Jülich : Materie und Material ; 14 ; 34)
Y1  - 2003
SN  - 3-89336-319-X
SP  - C2.1
EP  - C2.13
PB  - Forschungszentrum, Zentralbibliothek
CY  - Jülich
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kiesslich, G.
A1  - Wacker, A.
A1  - Scholl, E.
T1  - Nonlinear charging effect of quantum dots in a p-i-n diode. Kiesslich, G.; Wacker, A.; Scholl, E.; Vitusevich, S.A.; Belyaev, A.E.; Danylyuk, S.V.; Forster, A.; Klein, N.; Henini, M.
JF  - Physical Review B. 68 (2003)
Y1  - 2003
SN  - 1550-235X
N1  - 125331 (6 Seiten)
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Marso, M.
A1  - Mikulics, V. V.
A1  - Adam, R.
T1  - Ultrafast Phenomena in Freestanding LT-GaAs Devices. Marso, M.; Mikulics, V. V.; Adam, R.; Wu, S.; Zheng, X.; Camara, I.; Siebe, N. Y.; Förster, A.; Güsten, R.; Kordos, P.; Sobolewski, R.
JF  - Acta physica Polonica / A. 107 (2005), H. 1
Y1  - 2005
SN  - 0587-4246
SP  - 109
EP  - 117
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Wensorra, J.
A1  - Indlekofer, K. M.
A1  - Lüth, H.
T1  - Resonant tunneling in nanocolumns improved by quantum collimation. Wensorra, J.; Indlekofer, K. M.; Förster, A.; Lüth, H.
JF  - Nano Letters. 5 (2005)
Y1  - 2005
SN  - 0587-4246
SP  - 2470
EP  - 2475
ER  - 
TY  - JOUR
A1  - Schmidt, R.
A1  - Tonnesmann, A.
A1  - Förster, Arnold
A1  - Grimm, M.
A1  - Kordos, P.
A1  - Lüth, H.
T1  - Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates using an InP buffer layer
JF  - 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO 2000 ; [13 - 14 November 2000, University of Glasgow] / organised by Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow Scotland. MTT/ED/AP/LEO Societies Joint Chapter, United Kingdom and Republic of Ireland Section. With technical co-sponsorship from IEEE Electron Device Society
Y1  - 2000
SN  - 0-7803-6550-X
N1  - EDMO <8, 2000, Glasgow> ; University <Glasgow> / Department of Electronics and Electrical Engineering ; IEEE catalog number 00TH8534
SP  - 95
EP  - 98
PB  - IEEE Operations Center
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Betko, J.
A1  - Morvic, M.
A1  - Novak, J.
T1  - Magnetoresistance in low-temperature grown molecular-beam epitaxial GaAs. Betko, J.; Morvic, M.; Novak, J.; Förster, A.; Kordos, P.
JF  - Journal of Applied Physics. 86 (1999), H. 11
Y1  - 1999
SN  - 1089-7550
SP  - 6243
EP  - 6248
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Morvic, M.
A1  - Betko, J.
A1  - Novak, J.
T1  - Characterization of low-temperature GaAs by conductivity, Hall effect and magnetoresistance measurements.  Morvic, M., Betko, J.; Novak, J.; Förster, A.; Kordos, P.
JF  - 2nd Symposium on Non-Stoichiometric III-V Compounds : [4th - 6th October 1999, Erlangen] / [ed. by T. Marek ...] Friedrich-Alexander-Universität Erlangen-Nürnberg
Y1  - 1999
SN  - 3-932392-19-1
N1  - Symposium on Non-Stoichiometric III-V Compounds <2, 1999, Erlangen>
SP  - 79
EP  - 85
PB  - Lehrstuhl für Mikrocharakterisierung
CY  - Erlangen
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kordos, P.
A1  - Marso, M.
A1  - Rüders, F.
T1  - 550 GHz bandwidth photodetector on low-temperature grown molecular-beam epitaxial GaAs.  Kordos, P., Förster, A.; Marso, M.; Rüders, F.
JF  - Electronics Letters. 34 (1998), H. 1
Y1  - 1998
SN  - 1350-911X
SP  - 119
EP  - 120
ER  - 
TY  - JOUR
A1  - Vitusevich, S. A.
A1  - Förster, Arnold
A1  - Reetz, W.
A1  - Lüth, H.
A1  - Belyaev, A. E.
A1  - Danylyuk, S. V.
T1  - Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode
JF  - Nanotechnology. 11 (2000), H. 4
Y1  - 2000
SN  - 1361-6528
SP  - 305
EP  - 308
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Hartmann, A.
A1  - Dieker, Ch.
A1  - Hollfelder, M.
T1  - Spontaneous formation of tilted AlGaAS/GaAs superlattice during AlGaAs growth. Hartmann, A.; Dieker, Ch.; Hollfelder, M.; Hardtdegen, H.; Förster, A.; Lüth, H.
JF  - Applied Surface Science. 123-124 (1998)
Y1  - 1998
SN  - 0169-4332
N1  - = Proceedings of the Sixth International Conference on the Formation of Semiconductor Interfaces
SP  - 704
EP  - 709
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Griebel, M.
A1  - Indlekofer, M.
A1  - Lüth, H.
T1  - Transport through a buried double barrier single electron transistor at low temperatures
JF  - Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4
Y1  - 1998
SN  - 1386-9477
SP  - 502
EP  - 506
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Malzer, S.
A1  - Heber, J.
A1  - Peter, M.
T1  - Vertical transport and relaxation mechanisms in d-doping superlattices. Malzer, S.; Heber, J.; Peter, M.; Eckl, S.; Elpelt, R.; Doehler, G. H.; Förster, A.; Lüth, H.
JF  - Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4
Y1  - 1998
SN  - 1386-9477
SP  - 349
EP  - 352
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Rosenauer, A.
A1  - Fischer, U.
A1  - Gerthsen, D.
T1  - Composition evaluation by lattice fringe analysis. Rosenauer, A.; Fischer U.;  Gerthsen D.;  Förster A.
JF  - Ultramicroscopy. 72 (1998), H. 3-4
Y1  - 1998
SN  - 0304-3991
SP  - 121
EP  - 133
ER  - 
TY  - JOUR
A1  - Darmo, J.
A1  - Schäffer, F.
A1  - Förster, Arnold
A1  - Kordos, P.
T1  - Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range
JF  - ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]
Y1  - 2000
SN  - 0780359399
N1  - International Conference on Advanced Semiconductor Devices and Microsystems ; (3rd : ; 2000 : ; Smolenice, Slovakia)
SP  - 147
EP  - 150
PB  - IEEE
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Griebel, M.
A1  - Indlekofer, K.M.
A1  - Lüth, H.
T1  - Single electron transport in resonant tunnelling diodes laterally confined by ion implantation. Griebel, M.; Indlekofer, K.M.; Förster, A.; Lüth, H.
JF  - Journal of  Physics D: Applied  Physics. 32 (1999), H. 14
Y1  - 1999
SN  - 1361-6463
SP  - 1729
EP  - 1733
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Marso, M.
A1  - Gersdorf, P.
A1  - Fox, A.
T1  - An InAlAs-InGaAs OPFET with responsivity above 200 A/W at 1.3-&#956;m wavelength. Marso, M.; Gersdorf, P.; Fox, A.; Hodel, U.; Lambertini, R.; Kordos, P.
JF  - IEEE Photonics Technology Letters. 11 (1999), H. 1
Y1  - 1999
SN  - 1041-1135
SP  - 117
EP  - 119
ER  - 
TY  - JOUR
A1  - Rosenauer, A.
A1  - Oberst, W.
A1  - Litvinov, D.
A1  - Gerthsen, D.
A1  - Förster, Arnold
A1  - Schmidt, R.
T1  - Structural and Chemical Investigation of In-0.6Ga0.4As Stranski-Krastanow Layers Burried in GaAs by Transmission Electron Microscopy
JF  - Physical Review B. 61 (2000), H. 12
Y1  - 2000
SN  - 1095-3795
SP  - 8276
EP  - 8288
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lüth, Hans
A1  - Schäpers, Thomas
T1  - Die neue Welt
JF  - Spektrum der Wissenschaft (1999)
Y1  - 1999
SN  - 0170-2971
SP  - 90
EP  - 93
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Vitusevich, S. A.
A1  - Belyaev, A. E.
T1  - Optically controlled 2D tunneling in GaAs delta-doped p-n junction / S. A. Vitusevich ; A. Förster ; A. E. Belyaev ...
JF  - Semiconductor  Physics,  Quantum  Electronics  &  Optoelectronics (SQO) : International Scientific Journal. 2 (1999), H. 1
Y1  - 1999
SN  - 1605-6582
SP  - 7
EP  - 10
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Vitusevich, S. A.
A1  - Belyaev, B. A.
T1  - Intrinsic bistability effect in delta doped tunneling diodes /  S. A. Vitusevich ; A. Förster ; B. A.  Belyaev ...
JF  - Proceedings of the XXVIII International School on Physics of Semiconducting Compounds : Jaszowiec, Poland, June 6 - 11, 1999 / Polish Academy of Sciences, Institute of Physics. Ed. of the proceedings Wojciech Szuszkiewicz
Y1  - 1999
N1  - International School on Physics of Semiconducting Compounds <28, 1999, Jaszowiec> ; Acta physica Polonica : A ; 96, no. 5
CY  - Warsaw
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lachenmann, S. G.
A1  - Friedrich, I.
A1  - Uhlisch, D.
T1  - Superconductor/semiconductor step junctions: the basic element for hybrid three terminal devices. Lachenmann, S. G., Förster, A.; Friedrich, I.; Uhlisch, D.; Schäpers, Th.; Kastalsky, A.; Golubov, A. A.
JF  - Applied Superconductivity. 6 (1999), H. 10-12
Y1  - 1999
SN  - 0964-1807
SP  - 681
EP  - 688
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Vitusevich, S. A.
A1  - Belyaev, A. E.
A1  - Indlekofer, K. M.
T1  - Resonant tunneling effect in delta p-n GaAs junction. Vitusevich, S. A.; Förster, A.; Belyaev, A. E.; Indlekofer, K. M.; Lüth, H.; Konakova, R. V.
JF  - Microelectronic Engineering. 46 (1999), H. 1-4
Y1  - 1999
SN  - 0167-9317
N1  - International Conference on Micro- and Nanofabrication
SP  - 169
EP  - 172
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Tillmann, K.
A1  - Gerthsen, D.
A1  - Pfundstein, P.
T1  - Structural transformations and strain relaxation mechanisms of In0.6Ga0.4As islands grown by molecular beam epitaxy on GaAs(001) substrates / Tillmann, K. ; Gerthsen, D. ; Pfundstein, P. ; Förster, A. ; Urban, K.
JF  - Journal of applied physics. 78 (1995), H. 6
Y1  - 1995
SN  - 0021-8979
SP  - 3824
EP  - 3832
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Dekorsy, T.
A1  - Kim, A. T. M.
T1  - Subpicosecond coherent carrier-phonon dynamics in semiconductor heterostructures / T. Dekorsy ; A. M. T. Kim ; G. C. Cho ... A. Förster
JF  - Physical review / B, Condensed matter and materials physics. 53 (1996), H. 3
Y1  - 1996
SN  - 1095-3795
SP  - 1531
EP  - 1538
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Indlekofer, K.
A1  - Lange, J.
T1  - Theory of single-electron tunneling in resonant-tunneling diodes including scattering and multiple subbands at finite temperature / K. M. Indlekofer ; J. Lange ; A. Förster ...
JF  - Physical review / B, Condensed matter and materials physics. 53 (1996), H. 11
Y1  - 1996
SN  - 1095-3795
SP  - 7392
EP  - 7402
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Appenzeller, J.
A1  - Schroer, C.
T1  - Electron interference in a T-shaped quantum transistor based on Schottky-gate technology / J. Appenzeller ; Ch. Schroer ; Th. Schäpers ... A. Förster ...
JF  - Physical review / B, Condensed matter and materials physics. 53 (1996), H. 15
Y1  - 1996
SN  - 1095-3795
SP  - 9959
EP  - 9963
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schmidt, T.
A1  - Haug, R. J.
T1  - Single-electron transport in small resonant-tunneling diodes with various barrier-thickness asymmetries / T. Schmidt ; R. J. Haug ; K. v. Klitzing ; A. Förster ...
JF  - Physical review / B, Condensed matter and materials physics. 55 (1997), H. 4
Y1  - 1997
SN  - 1095-3795
SP  - 2230
EP  - 2236
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lachenmann, S. G.
A1  - Friedrich, I.
T1  - Charge transport in superconductor/semiconductor/normal-conductor step junctions / S. G. Lachenmann ; I. Friedrich ; A. Förster ...
JF  - Physical review / B, Condensed matter and materials physics. 56 (1997), H. 21
Y1  - 1997
SN  - 1095-3795
SP  - 14108
EP  - 14115
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Ohler, C.
A1  - Daniels, C.
T1  - Heterojunction band offsets and Schottky-barrier heights: Tersoff’s theory in the presence of strain / C. Ohler ; C. Daniels ; A. Förster ...
JF  - Physical review / B, Condensed matter and materials physics. 58 (1998), H. 12
Y1  - 1998
SN  - 1095-3795
SP  - 7864
EP  - 7871
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lauter, J.
A1  - Bauser, E.
T1  - Epitaxial gallium arsenide for nuclear radiation detector applications / J. Lauter ; E. Bauser ; A. Förster ...
JF  - Nuclear physics B / Proceedings supplements. 44 (1995), H. 1-3
Y1  - 1995
SN  - 0920-5632
SP  - 381
EP  - 385
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lauter, J.
A1  - Protic, D.
A1  - Lüth, H.
T1  - AlGaAs/GaAs SAM-avalanche photodiode : an X-ray detector for low energy photons / J. Lauter ;  D. Protic ; A. Förster ; H. Lüth
JF  - Nuclear instruments and methods in physics research section A: Accelerators, spectrometers, detectors and associated equipment. 356 (1995), H. 2-3
Y1  - 1995
SN  - 0168-9002
SP  - 324
EP  - 329
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Novák, J.
A1  - Morvic, M.
T1  - Wet chemical separation of low-temperature GaAs layers from their GaAs substrates / J. Novák ; M. Morvic ;  J. Betko ; A. Förster ...
JF  - Materials science and engineering / B, Solid state materials for advanced technology. 40 (1996), H. 1
Y1  - 1996
SN  - 0921-5107
SP  - 58
EP  - 62
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Zettler, J.-T.
A1  - Mikkelsen, H.
A1  - Leo, K.
T1  - Modulated ellipsometric measurements and transfer-matrix calculation of the field-dependent dielectric function of a multiple quantum well / J.-Th. Zettler ; H. Mikkelsen ; K. Leo ... A. Förster
JF  - Physical Review B . 46 (1992), H. 24
Y1  - 1992
SN  - 0163-1829
N1  - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795
SP  - 15955
EP  - 15962
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lohe, C.
A1  - Leuther, A.
T1  - Quasi-two-dimensional plasmons of a single &#948;-doped layer in GaAs studied by high-resolution electron-energy-loss spectroscopy / C. Lohe ; A. Leuther ; A. Förster ...
JF  - Physical Review B . 47 (1993), H. 7
Y1  - 1993
SN  - 0163-1829
N1  - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795
SP  - 3819
EP  - 3826
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kohleick, R.
A1  - Lüth, H.
T1  - Ga segregation and the effect of Si and Ge interlayers at the GaAs(100)/AlAs heterostructure  / R. Kohleick ; A. Förster ; H. Lüth
JF  - Physical Review B . 48 (1993), H. 20
Y1  - 1993
SN  - 0163-1829
N1  - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795
SP  - 15138
EP  - 15143
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Ohler, C.
A1  - Kohleick, R.
T1  - Strain dependence of the valence-band offset in InAs/GaAs heterojunctions determined by ultraviolet photoelectron spectroscopy / C. Ohler ; R. Kohleick ; A. Förster ...
JF  - Physical Review B . 50 (1994), H. 11
Y1  - 1994
SN  - 0163-1829
N1  - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795
SP  - 7833
EP  - 7837
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Müller, F.
A1  - Lengeler, B.
A1  - Schäpers, T.
T1  - Electron-electron interaction in ballistic electron beams / F. Müller ; B. Lengeler ; Th. Schäpers ... A. Förster...
JF  - Physical Review B . 51 (1995), H. 8
Y1  - 1995
SN  - 0163-1829
N1  - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795
SP  - 5099
EP  - 5105
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schmidt, T.
A1  - Tewordt, M.
A1  - Blick, R. H.
T1  - Quantum-dot ground states in a magnetic field studied by single-electron tunneling spectroscopy on double-barrier heterostructures / T. Schmidt ; M. Tewordt ; R. H. Blick ... A. Förster ...
JF  - Physical Review B . 51 (1995), H. 8
Y1  - 1995
SN  - 0163-1829
N1  - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795
SP  - 5570
EP  - 5573
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kordos, P.
A1  - Marso, M.
T1  - Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs / P. Kordos ; M. Marso, ; A. Förster ...
JF  - Applied physics letters. 71 (1997), H. 8
Y1  - 1997
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 1118
EP  - 1120
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Rosenauer, A.
A1  - Fischer, U.
A1  - Gerthsen, D.
T1  - Composition evaluation of InxGa1 – xAs Stranski-Krastanow-island structures by strain state analysis / A. Rosenauer ; U. Fischer ; D. Gerthsen ; A. Förster
JF  - Applied physics letters. 71 (1997), H. 26
Y1  - 1997
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 3868
EP  - 3870
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lange, J.
A1  - Gerthsen, D.
T1  - The effect of growth temperature on AlAs/GaAs resonant tunnelling diodes
JF  - Journal of Physics D: Applied Physics. 27 (1994), H. 1
Y1  - 1994
SN  - 0022-3727
N1  - ISSN der E-Ausg.: 1361-6463
SP  - 175
EP  - 178
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Ohler, C.
A1  - Moers, J.
T1  - Band offsets at heavily strained III - V interfaces / C. Ohler ; A. Förster ; J. Moers...
JF  - Journal of Physics D: Applied Physics. 30 (1997), H. 10
Y1  - 1997
SN  - 0022-3727
N1  - ISSN der E-Ausg.: 1361-6463
SP  - 1436
EP  - 1441
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schäpers, T.
A1  - Müller, F.
A1  - Lengeler, B.
T1  - Reflection and transmission of ballistic electrons at a potential barrier / Schäpers, T.  ; Müller, F.  ; Förster, A. ; Lengeler, B. ; Lüth, H.
JF  - Superlattices and microstructures . 14 (1993), H. 1
Y1  - 1993
SN  - 0749-6036
SP  - 57
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Darmo, J.
A1  - Dubecký, F.
A1  - Kordos, P.
T1  - Deep-level states and electrical properties of GaAs grown at 250 °C / J. Darmo ; F. Dubecký ; P. Kordos ; A. Förster ...
JF  - Materials science and engineering B: Solid&#150; state materials for advanced technology. 28 (1994), H. 1-3
Y1  - 1994
SN  - 0921-5107
SP  - 393
EP  - 396
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Betko, J.
A1  - Kordos, P.
A1  - Kuklovsky, S.
T1  - Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature / J. Betko ; P. Kordos ; S. Kuklovsky ; A. Förster ...
JF  - Materials science and engineering B: Solid&#150; state materials for advanced technology. 28 (1994), H. 1-3
Y1  - 1994
SN  - 0921-5107
SP  - 147
EP  - 150
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Novak, J.
A1  - Kucera, M.
A1  - Morvic, M.
T1  - Characterization of low-temperature GaAs by galvanomagnetic an photoluminescence measurements / J. Novák ; M. Kucera ; M. Morvic ... A. Förster ...
JF  - Materials science and engineering B: Solid&#150; state materials for advanced technology. 44 (1997), H. 1-3
Y1  - 1997
SN  - 0921-5107
SP  - 341
EP  - 344
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Rose, D.
A1  - Pietsch, U.
A1  - Metzger, H.
T1  - Depth resolved investigation of the relaxation behaviour in strained GaInAs/GaAs superlattices / Rose, D. ; Pietsch, U. ; Förster, A. ; Metzger, H....
JF  - Physica B: condensed matter. 198 (1994), H. 1-3
Y1  - 1994
SN  - 0921-4526
SP  - 256
EP  - 258
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Klemradt, U.
A1  - Funke, M.
A1  - Fromm, M
T1  - Growth-induced interface roughness of GaAs/AlAs-layers studied by X-ray scattering under grazing angles / U. Klemradt ; M. Funke ; M. Fromm ... A Förster
JF  - Physica B: condensed matter. 221 (1996), H. 1-4
Y1  - 1996
SN  - 0921-4526
SP  - 27
EP  - 33
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Brugger, H.
A1  - Meiners, U.
A1  - Diniz, R.
T1  - Hydrostatic pressure sensors based on solid state tunneling devices / H. Brugger; U. Meiners ; R. Diniz ... A. Förster ...
JF  - Solid state electronics. 37 (1994), H. 4-6
Y1  - 1994
SN  - 0038-1101
SP  - 801
EP  - 804
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schönhut, J.
A1  - Metzner, C.
T1  - Optical investigation of impurity bands in a delta-doped n-layer / J. Schönhut ; C. Metzner ; S. Müller ... A. Förster ...
JF  - Solid state electronics. 40 (1996), H. 1-8
Y1  - 1996
SN  - 0038-1101
SP  - 701
EP  - 705
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schmidt, T.
A1  - Tewordt, M.
T1  - Single-electron-tunneling spectroscopy of asymmetric laterally confined double-barrier heterostructures / T. Schmidt ; M. Tewordt ; R. J. Haug ... A. Förster ...
JF  - Solid state electronics. 40 (1996), H. 1-8
Y1  - 1996
SN  - 0038-1101
SP  - 15
EP  - 19
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Tillmann, K.
A1  - Gerthsen, D.
T1  - Growth morphology and misfit relaxation of MBE-grown In0.6 G0.4 As on GaAs(001) / K. Tillmann ; D. Gerthsen ; A. Förster ...
JF  - Thin solid films. 261 (1995), H. 1-2
Y1  - 1995
SN  - 0040-6090
SP  - 139
EP  - 147
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Ohler, C.
A1  - Daniels, C.
T1  - Barrier height at clean Au/InAs(100) interfaces / C. Ohler ; C. Daniels ; A. Förster ...
JF  - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15 (1997), H. 3
Y1  - 1997
SN  - 0169-4332
SP  - 702
EP  - 706
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Layet, J. M.
A1  - Lüth, H.
T1  - The effect of inhomogeneous dopant profiles on the electron energy loss spectra of Si(100) /
JF  - Applied Physics A: Materials Science & Processing. 47 (1988), H. 1
Y1  - 1988
SN  - 0947-8396
N1  - ISSN der E-Ausg.: 1432-0630
SP  - 95
EP  - 97
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lentzen, M.
A1  - Gerthsen, D.
T1  - Growth mode and strain relaxation during the initial stage of InxGa1–xAs growth on GaAs(001) / M. Lentzen ; D. Gerthsen ; A. Förster ...
JF  - Applied physics letters. 60 (1992), H. 1
Y1  - 1992
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 74
EP  - 76
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schäpers, T.
A1  - Krüger, M.
A1  - Appenzeller, J.
T1  - Effect of electron-electron interaction on hot ballistic electron beams / Th. Schäpers ; M. Krüger ; J. Appenzeller ; A. Förster ...
JF  - Applied physics letters. 66 (1995), H. 26
Y1  - 1995
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 3603
EP  - 3606
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kordos, P.
A1  - Betko, J.
T1  - Semi-insulating GaAs layers grown by molecular-beam epitaxy /  P. Kordos ; A. Förster ; J. Betko ...
JF  - Applied physics letters. 67 (1995), H. 7
Y1  - 1995
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 983
EP  - 985
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schmidt, T.
A1  - Tewordt, M.
A1  - Haug, R. J.
T1  - Peak-to-valley ratio of small resonant-tunneling diodes with various barrier-thickness asymmetries / T. Schmidt ; M. Tewordt ; R. J. Haug ... A. Förster ...
JF  - Applied physics letters. 68 (1996), H. 6
Y1  - 1996
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 838
EP  - 840
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Verghese, S.
A1  - Zamdmer, N.
A1  - Hu, Qing
T1  - An optical correlator using a low-temperature-grown GaAs photoconductor / S. Verghese ; N. Zamdmer ; Qing Hu .... A. Förster
JF  - Applied physics letters. 69 (1996), H. 6
Y1  - 1996
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 842
EP  - 844
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Betko, J.
A1  - Morvic, M.
A1  - Novak, J.
T1  - Hall mobility analysis in low-temperature-grown molecular-beam epitaxial GaAs / J. Betko , M. Morvic ; J. Novák ... A. Förster ...
JF  - Applied physics letters. 69 (1996), H. 17
Y1  - 1996
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 2563
EP  - 2565
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Verghese, S.
A1  - Zamdmer, N.
A1  - Hu, Qing
T1  - Cryogenic picosecond sampling using fiber-coupled photoconductive switch / S. Verghese ; N. Zamdmer ; Qing Hu ; A. Förster
JF  - Applied physics letters. 70 (1997), H. 20
Y1  - 1997
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 2644
EP  - 2646
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schäfer, B.-J.
A1  - Londschien, M.
T1  - Arsenic passivation of MOMBE grown GaAs surfaces / B. -J. Schäfer ;  A. Förster ; M. Londschien ...
JF  - Surface Science. 204 (1988), H. 3
Y1  - 1988
SN  - 0039-6028
N1  - ISSN der E-Ausg.: 0039-6028
SP  - 485
EP  - 490
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Rizzi, Angela
A1  - Lüth, H.
T1  - Epitaxial growth and characterization of Si/NiSi2/Si(111) heterostructures / Angela Rizzi ; A. Förster ; H. Lüth
JF  - Surface Science. 211 - 212 (1989)
Y1  - 1989
SN  - 0039-6028
N1  - ISSN der E-Ausg.: 0039-6028
SP  - 620
EP  - 629
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Resch, U.
A1  - Essera, N.
A1  - Raptis, Y. S.
T1  - Arsenic passivation of MBE grown GaAs(100): structural and electronic properties of the decapped surfaces / U. Resch ;  N. Essera ; Y. S. Raptis ... A. Förster ...
JF  - Surface Science. 269-270 (1992)
Y1  - 1992
SN  - 0039-6028
N1  - ISSN der E-Ausg.: 0039-6028
SP  - 797
EP  - 803
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schäpers, T.
A1  - Müller, F.
T1  - Control of ballistic electrons in (AlGa)As/GaAs heterostructures by means of superconducting niobium gate structures / T. Schäpers ; F. Müller ; A. Förster ...
JF  - Surface Science. 305 (1994), H. 1-3
Y1  - 1994
SN  - 0039-6028
N1  - ISSN der E-Ausg.: 0039-6028
SP  - 460
EP  - 464
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Layet, J. M.
A1  - Lüth, H.
T1  - Evaluation of dopant profiles and diffusion constants by means of electron energy loss spectroscopy
JF  - Applied Surface Science. 41 - 42 (1989)
Y1  - 1989
SN  - 0169-4332
N1  - ISSN der E-Ausg.: 0169-4332
SP  - 306
EP  - 311
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Resch, U.
A1  - Scholz, S. M.
T1  - Thermal desorption of amorphous arsenic caps from GaAs(100) monitored by reflection anisotropy spectroscopy / U. Resch ; S. M. Scholz ;  U. Rossow ... A. Förter ...
JF  - Applied Surface Science. 63 (1993), H. 1-4
Y1  - 1993
SN  - 0169-4332
N1  - ISSN der E-Ausg.: 0169-4332
SP  - 106
EP  - 110
ER  -