TY  - JOUR
A1  - Schöning, Michael Josef
A1  - Beckers, L.
A1  - Schaub, A.
A1  - Zander, W.
A1  - Schubert, J.
A1  - Mesters, S.
A1  - Kordos, P.
A1  - Lüth, H.
T1  - A novel silicon-based pH sensor prepared by pulsed laser deposition technique
JF  - Proceedings of Eurosensors X, the 10th European Conference on Solid-State Transducers, September 8-11, 1996, Leuven, Belgium / [KU Leuven]. Puers, Robert.  Vol. 3.
Y1  - 1996
SN  - 90-803282-1-9
N1  - Eurosensors ; (10, 1996, Louvain) Eurosensors, the European Conference on Solid-State Transducers ; (10 : ; 1996.09.08-11 : ; Leuven)
SP  - 781
EP  - 784
PB  - Catholic University Leuven
CY  - Heverlee, Belgium
ER  - 
TY  - JOUR
A1  - Schöning, Michael Josef
A1  - Schaub, A.
A1  - Zundel, A.
A1  - Beckers, L.
A1  - Schubert, J.
A1  - Zander, W.
A1  - Kordos, P.
A1  - Lüth, H.
T1  - Pulsed laser deposition as a novel thin film preparation method for silicon-based field effect sensors
JF  - Proceedings of the 25th European Solid State Device Research Conference : the Netherlands Congress Centre, The Hague, the Netherlands, 25th - 27th September 1995 / ESSDERC '95. Ed. by H. C. de Graaff
Y1  - 1995
SN  - 2-86332-182-X
N1  - ESSDERC ; (25, 1995, 's-Gravenhage) ; European Solid State Device Research Conference (ESSDERC) ; (25 : ; 1995.09.25-27 : ; Den Haag)
SP  - 601
EP  - 604
PB  - Ed. Frontières
CY  - Gif-sur-Yvette
ER  - 
TY  - JOUR
A1  - Schöning, Michael Josef
A1  - Malkoc, Ü.
A1  - Thust, M.
A1  - Steffen, A.
A1  - Kordos, P.
A1  - Lüth, H.
T1  - Novel electrochemical sensors with structured and porous semiconductor/insulator capacitors
JF  - Proceedings of the Seventh International Meeting on Chemical Sensors : 27 - 30 July, 1998, Beijing, P. R. China / ed. Zhi-Gang Zhou
Y1  - 1998
N1  - International Meeting on Chemical Sensors ; (7, 1998, Beijing) ; International Meeting on Chemical Sensors (IMCS) ; (7 : ; 1998.07.27-30 : ; Beijing)
SP  - 885
EP  - 887
PB  - Elsevier
CY  - Amsterdam [u.a.]
ER  - 
TY  - JOUR
A1  - Poghossian, Arshak
A1  - Thust, M.
A1  - Schöning, Michael Josef
A1  - Müller-Veggian, Mattea
A1  - Kordos, P.
A1  - Lüth, H.
T1  - Cross-sensitivity of a capacitive penicillin sensor combined with a diffusion barrier
JF  - Sensors and Actuators B. 68 (2000), H. 1-3
Y1  - 2000
SN  - 0925-4005
SP  - 260
EP  - 265
ER  - 
TY  - JOUR
A1  - Schütz, S.
A1  - Schöning, Michael Josef
A1  - Schroth, P.
A1  - Weißbecker, B.
A1  - Kordos, P.
A1  - Lüth, H.
A1  - Hummel, Hans E.
T1  - An insectbased BioFET as a bioelectronic nose
JF  - Proceedings of the Seventh International Meeting on Chemical Sensors : 27 - 30 July, 1998, Beijing, P. R. China / ed. Zhi-Gang Zhou
Y1  - 1998
N1  - International Meeting on Chemical Sensors ; (7, 1998, Beijing) ; International Meeting on Chemical Sensors (IMCS) ; (7 : ; 1998.07.27-30 : ; Beijing)
SP  - 314
EP  - 316
PB  - Elsevier
CY  - Amsterdam [u.a.]
ER  - 
TY  - JOUR
A1  - Mikulics, M.
A1  - Marso, M.
A1  - Cámara Mayorga, I.
A1  - Gusten, R.
A1  - Stancek, S.
A1  - Michael, E. A.
A1  - Schieder, R.
A1  - Wolter, M.
A1  - Buca, D.
A1  - Förster, Arnold
A1  - Kordos, P.
A1  - Lüth, H.
T1  - Photomixers fabricated on nitrogen-ion-implanted GaAs
JF  - Applied physics letters. 87 (2005)
Y1  - 2005
SP  - 041106-1
EP  - 041106-3
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Darmo, J.
A1  - Dubecky, F.
A1  - Kordos, P.
T1  - Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs. Darmo, J.; Dubecky, F.; Kordos, P.; Förster, A.
JF  - Applied Physics Letters. 72 (1998), H. 5
Y1  - 1998
SN  - 1077-3118
SP  - 590
EP  - 592
ER  - 
TY  - JOUR
A1  - Hodel, U.
A1  - Orzati, A.
A1  - Marso, M.
A1  - Homann, O.
A1  - Fox, A.
A1  - Hart, A. v. d.
A1  - Förster, Arnold
A1  - Kordos, P.
A1  - Lüth, H.
T1  - A novel InAlAs/InGaAs layer structure for monolithically integrated photoreceiver
JF  - Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials
Y1  - 2000
SN  - 0-7803-6320-5
N1  - International Conference on Indium Phosphide and Related Materials <12, 2000, Williamsburg, Va.>
SP  - 466
EP  - 469
PB  - IEEE Service Center
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Darmo, J.
A1  - Schafer, F.
A1  - Kordos, P.
T1  - Thermal resistance of the semiconductor structures for a photomixing device. Darmo, J.; Schafer, F.; Forster, A.; Kordos, P.; Gusten, R
JF  - Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza
Y1  - 2002
SN  - 0-7803-7276-X
N1  - International Conference on Advanced Semiconductor Devices and Microsystems ; (4, 2002, Smolenice). ASDAM '02 ; (4 : ; 2002.10.14-16 : ; Smolenice)
SP  - 87
EP  - 90
PB  - IEEE Operations Center
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Schmidt, R.
A1  - Tonnesmann, A.
A1  - Förster, Arnold
A1  - Grimm, M.
A1  - Kordos, P.
A1  - Lüth, H.
T1  - Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates using an InP buffer layer
JF  - 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO 2000 ; [13 - 14 November 2000, University of Glasgow] / organised by Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow Scotland. MTT/ED/AP/LEO Societies Joint Chapter, United Kingdom and Republic of Ireland Section. With technical co-sponsorship from IEEE Electron Device Society
Y1  - 2000
SN  - 0-7803-6550-X
N1  - EDMO <8, 2000, Glasgow> ; University <Glasgow> / Department of Electronics and Electrical Engineering ; IEEE catalog number 00TH8534
SP  - 95
EP  - 98
PB  - IEEE Operations Center
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kordos, P.
A1  - Marso, M.
A1  - Rüders, F.
T1  - 550 GHz bandwidth photodetector on low-temperature grown molecular-beam epitaxial GaAs.  Kordos, P., Förster, A.; Marso, M.; Rüders, F.
JF  - Electronics Letters. 34 (1998), H. 1
Y1  - 1998
SN  - 1350-911X
SP  - 119
EP  - 120
ER  - 
TY  - JOUR
A1  - Darmo, J.
A1  - Schäffer, F.
A1  - Förster, Arnold
A1  - Kordos, P.
T1  - Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range
JF  - ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]
Y1  - 2000
SN  - 0780359399
N1  - International Conference on Advanced Semiconductor Devices and Microsystems ; (3rd : ; 2000 : ; Smolenice, Slovakia)
SP  - 147
EP  - 150
PB  - IEEE
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kordos, P.
A1  - Marso, M.
T1  - Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs / P. Kordos ; M. Marso, ; A. Förster ...
JF  - Applied physics letters. 71 (1997), H. 8
Y1  - 1997
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 1118
EP  - 1120
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Darmo, J.
A1  - Dubecký, F.
A1  - Kordos, P.
T1  - Deep-level states and electrical properties of GaAs grown at 250 °C / J. Darmo ; F. Dubecký ; P. Kordos ; A. Förster ...
JF  - Materials science and engineering B: Solid&#150; state materials for advanced technology. 28 (1994), H. 1-3
Y1  - 1994
SN  - 0921-5107
SP  - 393
EP  - 396
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Betko, J.
A1  - Kordos, P.
A1  - Kuklovsky, S.
T1  - Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature / J. Betko ; P. Kordos ; S. Kuklovsky ; A. Förster ...
JF  - Materials science and engineering B: Solid&#150; state materials for advanced technology. 28 (1994), H. 1-3
Y1  - 1994
SN  - 0921-5107
SP  - 147
EP  - 150
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kordos, P.
A1  - Betko, J.
T1  - Semi-insulating GaAs layers grown by molecular-beam epitaxy /  P. Kordos ; A. Förster ; J. Betko ...
JF  - Applied physics letters. 67 (1995), H. 7
Y1  - 1995
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 983
EP  - 985
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kordos, P.
A1  - Betko, J.
T1  - Electrical and structural characterization of MBE GaAs grown at temperatures between 200 and 600 °C / P. Kordos ; J. Betko; A. Förster ...
JF  - Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141)
Y1  - 1995
SN  - 0-7503-0226-7
N1  - International Symposium on Compound Semiconductors <21, 1994, San Diego, Calif.> ;  Institute of Physics <London>
SP  - 295
EP  - ff.
PB  - Institute of Physics
CY  - Bristol [u.a.]
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kordos, P.
A1  - Ruders, F.
T1  - Properties of LT MBE GaAs for photomixing up to THz frequencies / P. Kordos ; F. Ruders ; M. Marso ; A. Förster
JF  - Proceedings : 8 - 11 December 1996, Australian National University, Canberra, Australia / ed.: C. Jagadish
Y1  - 1997
SN  - 0-7803-3374-8
N1  - Conference on Optoelectronic and Microelectronic Materials and Devices <1996, Canberra> ; IEEE catalog number: 96TH8197
SP  - 71
EP  - ff.
PB  - IEEE Service Center
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Mikulics, M.
A1  - Camara, I.
A1  - Hardt, A. van der
A1  - Fox, A.
A1  - Förster, Arnold
A1  - Gusten, R.
A1  - Lüth, H.
A1  - Kordos, P.
T1  - Generation of THz radiation by photomixing in low-temperature-grown MBE GaAs
JF  - Fifth International Conference on Advanced Semiconductor Devices and Microsystems : conference proceedings ; Smolenice Castle, Slovakia, October 17 - 21, 2004 / [organizers: Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by J. Osvald
Y1  - 2004
SN  - 0-7803-8335-7
N1  - International Conference on Advanced Semiconductor Devices and Microsystems <5, 2004, Smolenice> ; ASDAM <5, 2004, Smolenice> ; IEEE catalog numer: 04EX867
SP  - 231
EP  - 234
PB  - IEEE Operations Center
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Zatko, B.
A1  - Dubecký, F.
A1  - Bohacek, P.
A1  - Gombia, E.
A1  - Frigeri, P.
A1  - Mosca, R.
A1  - Franchi, S.
A1  - Huarn, J.
A1  - Nescas, V.
A1  - Sekacova, M.
A1  - Förster, Arnold
A1  - Kordos, P.
T1  - On the spectrometric performance limit of radiation detectors based on semi-insulating GaAs
JF  - Nuclear instruments and methods in physics research, Section A. 531 (2004), H. 1-2
Y1  - 2004
SN  - 0168-9002
SP  - 111
EP  - 120
ER  - 
TY  - JOUR
A1  - Srnanek, R.
A1  - Geurts, J.
A1  - Lentze, M.
A1  - Irmer, G.
A1  - Donoval, D.
A1  - Brdecka, P.
A1  - Kordos, P.
A1  - Förster, Arnold
A1  - Sciana, B.
A1  - Radziewicz, D.
A1  - Tlaczala, M.
T1  - Study of d-doped GaAs layers by micro-Raman spectroscopy on bevelled samples
JF  - Applied surface science  . 230 (2004), H. 1 -4
Y1  - 2004
SN  - 0169-4332
N1  - ISSN der E-Ausg.: 0169-4332
SP  - 379
EP  - 385
ER  - 
TY  - JOUR
A1  - Mikulics, M.
A1  - Adam, R.
A1  - Kordos, P.
A1  - Förster, Arnold
A1  - Lüth, H.
A1  - Wu, S.
A1  - Zheng, X.
A1  - Sobolewski, R.
T1  - Ultrafast low-temperature-grown epitaxial GaAs photodetectors transferred on flexible plastic substrates
JF  - IEEE photonics technology letters : IEEE PTL. 17 (2005), H. 8
Y1  - 2005
SN  - 1041-1135
SP  - 1725
EP  - 1727
ER  - 
TY  - JOUR
A1  - Schütz, S.
A1  - Weißbecker, B.
A1  - Hummel, Hans E.
A1  - Schöning, Michael Josef
A1  - Riemer, A.
A1  - Kordos, P.
A1  - Lüth, H.
T1  - Field effect transistor-insect antenna junction
JF  - Naturwissenschaften
Y1  - 1997
SN  - 1432-1904
VL  - 84
SP  - 86
EP  - 88
ER  - 
TY  - JOUR
A1  - Thust, Marion
A1  - Schöning, Michael Josef
A1  - Frohnhoff, S.
A1  - Arens-Fischer, R.
A1  - Kordos, P.
A1  - Lüth, H.
T1  - Porous silicon as a substrate material for potentiometric biosensors
JF  - Measurement Science and Technology
Y1  - 1996
U6  - http://dx.doi.org/10.1088/0957-0233/7/1/003
VL  - 7
IS  - 1
SP  - 26
EP  - 29
ER  -