TY  - JOUR
A1  - Bäcker, Matthias
A1  - Raue, Markus
A1  - Schusser, Sebastian
A1  - Jeitner, C.
A1  - Breuer, L.
A1  - Wagner, P.
A1  - Poghossian, Arshak
A1  - Förster, Arnold
A1  - Mang, Thomas
A1  - Schöning, Michael Josef
T1  - Microfluidic chip with integrated microvalves based on temperature- and pH-responsive hydrogel thin films
JF  - Physica Status Solidi  (a)
N2  - Two types of microvalves based on temperature-responsive poly(N-isopropylacrylamide) (PNIPAAm) and pH-responsive poly(sodium acrylate) (PSA) hydrogel films have been developed and tested. The PNIPAAm and PSA hydrogel films were prepared by means of in situ photopolymerization directly inside the fluidic channel of a microfluidic chip fabricated by combining Si and SU-8 technologies. The swelling/shrinking properties and height changes of the PNIPAAm and PSA films inside the fluidic channel were studied at temperatures of deionized water from 14 to 36 °C and different pH values (pH 3–12) of Titrisol buffer, respectively. Additionally, in separate experiments, the lower critical solution temperature (LCST) of the PNIPAAm hydrogel was investigated by means of a differential scanning calorimetry (DSC) and a surface plasmon resonance (SPR) method. Mass-flow measurements have shown the feasibility of the prepared hydrogel films to work as an on-chip integrated temperature- or pH-responsive microvalve capable to switch the flow channel on/off.
Y1  - 2012
U6  - http://dx.doi.org/10.1002/pssa.201100763
SN  - 1862-6319
VL  - 209
IS  - 5
SP  - 839
EP  - 845
PB  - Wiley-VCH
CY  - Weinheim
ER  - 
TY  - JOUR
A1  - Darmo, J.
A1  - Schäffer, F.
A1  - Förster, Arnold
A1  - Kordos, P.
T1  - Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range
JF  - ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]
Y1  - 2000
SN  - 0780359399
N1  - International Conference on Advanced Semiconductor Devices and Microsystems ; (3rd : ; 2000 : ; Smolenice, Slovakia)
SP  - 147
EP  - 150
PB  - IEEE
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Förster, Arnold
T1  - Ultrahigh frequency measurements of magnetic penetration length and surface impedance of YBa2Cu3O7–x microstriplines on Si and GaAs substrates . Rüders, F; Hollricher, O.;  Copetti, C. A. ; Förster,  A. ; Buchal, Ch. ; Prusseit, W.  ; Kinder, H.
JF  - Journal of Applied Physics. 77 (1995), H. 10
Y1  - 1995
SN  - 1089-7550
SP  - 5282
EP  - 5286
ER  - 
TY  - JOUR
A1  - Förster, Arnold
T1  - Layer Deposition I
JF  - Fundamentals of nanoelectronics / Stefan Blügel ... (ed.). - (Lecture manuscripts of the ... Spring School of the Department of Solid State Research ; 34). - (Schriften des Forschungszentrums Jülich : Materie und Material ; 14 ; 34)
Y1  - 2003
SN  - 3-89336-319-X
SP  - C2.1
EP  - C2.13
PB  - Forschungszentrum, Zentralbibliothek
CY  - Jülich
ER  - 
TY  - JOUR
A1  - Förster, Arnold
T1  - Resonant tunneling diodes operating as modern quantum transport devices
JF  - Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices : (December 14 - 18, 1999) / ed.: Vikram Kumar ... - Vol. 2
Y1  - 2000
SN  - 81-7023-998-2
N1  - International Workshop on the Physics of Semiconductor Devices <10, 1999, Delhi>
SP  - 966
EP  - 966
PB  - Allied Publ.
CY  - New Delhi [u.a.]
ER  - 
TY  - BOOK
A1  - Förster, Arnold
T1  - Anwendung der hochauflösenden Elektronenenergieverlustspektroskopie zum Studium von Halbleiterschichtsystemen. - (Berichte der Kernforschungsanlage Jülich / Kernforschungsanlage  ; 2247)
Y1  - 1988
N1  - Zugl.: Aachen, Techn. Hochsch., Diss., 1988
PB  - Zentralbibliothek der Kernforschungsanlage
CY  - Jülich
ER  - 
TY  - JOUR
A1  - Förster, Arnold
T1  - Resonant tunneling diodes : the effect of structural properties on their performance
JF  - Festkörperprobleme = Advances in solid state physics. 33 (1994)
Y1  - 1994
SN  - 0065-3357
N1  - Review ; 2. ISSN: 0430-3393
SP  - 37
EP  - 62
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Adam, R.
A1  - Mikulics, M.
A1  - Schelten, J.
T1  - Fabrication and subpicosecond optical response of low-temperature-grown GaAs freestanding photoconductive devices. Adam, R.; Mikulics, M.; Forster, A.; Schelten, J.; Siegel, M.; Kordos, P.; Zheng, X.; Wu, S.; Sobolewski, R.
JF  - Applied Physics Letters. 81 (2002), H. 18
Y1  - 2002
SN  - 1077-3118
SP  - 3485
EP  - 3487
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Appenzeller, J.
A1  - Schroer, C.
T1  - Electron interference in a T-shaped quantum transistor based on Schottky-gate technology / J. Appenzeller ; Ch. Schroer ; Th. Schäpers ... A. Förster ...
JF  - Physical review / B, Condensed matter and materials physics. 53 (1996), H. 15
Y1  - 1996
SN  - 1095-3795
SP  - 9959
EP  - 9963
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Belyaev, A. E.
A1  - Vitusevich, S.A.
A1  - Eaves, L.
T1  - Photoresponse spectra in p-i-n diodes containing quantum dots. Belyaev, A.E.; Vitusevich, S.A.; Eaves, L.; Main, P.C.; Henini, M.; Förster, A.; Reetz, W.; Danylyuk, S.V.
JF  - Nanotechnology. 13 (2002), H. 1
Y1  - 2002
SP  - 94
EP  - 96
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Bertuccio, G.
A1  - Pullia, A.
T1  - Pixel X-ray detectors in epitaxial gallium arsenide withhigh-energy resolution capabilities (Fano factor experimentaldetermination) /  G. Bertuccio ; A. Pullia ; J. Lauter ; A. Förster ...
JF  - IEEE transactions on nuclear science. 44 (1997), H. 1
Y1  - 1997
SN  - 0018-9499
SP  - 1
EP  - 5
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Betko, J.
A1  - Kordos, P.
A1  - Kuklovsky, S.
T1  - Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature / J. Betko ; P. Kordos ; S. Kuklovsky ; A. Förster ...
JF  - Materials science and engineering B: Solid&#150; state materials for advanced technology. 28 (1994), H. 1-3
Y1  - 1994
SN  - 0921-5107
SP  - 147
EP  - 150
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Betko, J.
A1  - Morvic, M.
A1  - Novak, J.
T1  - Magnetoresistance in low-temperature grown molecular-beam epitaxial GaAs. Betko, J.; Morvic, M.; Novak, J.; Förster, A.; Kordos, P.
JF  - Journal of Applied Physics. 86 (1999), H. 11
Y1  - 1999
SN  - 1089-7550
SP  - 6243
EP  - 6248
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Betko, J.
A1  - Morvic, M.
A1  - Novak, J.
T1  - Hall mobility analysis in low-temperature-grown molecular-beam epitaxial GaAs / J. Betko , M. Morvic ; J. Novák ... A. Förster ...
JF  - Applied physics letters. 69 (1996), H. 17
Y1  - 1996
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 2563
EP  - 2565
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Brugger, H.
A1  - Meiners, U.
T1  - High quality GaAs-based resonant tunneling diodes for high frequency device applications / H. Brugger ; U. Meiners ; C. Wölk ... A. Förster ...
JF  - Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman
Y1  - 1991
SN  - 0-7803-0491-8
N1  - Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits <1991, Ithaca, NY>
SP  - 39
EP  - ff.
PB  - Inst. of Electrical and Electronics Engineers
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Brugger, H.
A1  - Meiners, U.
A1  - Diniz, R.
T1  - Hydrostatic pressure sensors based on solid state tunneling devices / H. Brugger; U. Meiners ; R. Diniz ... A. Förster ...
JF  - Solid state electronics. 37 (1994), H. 4-6
Y1  - 1994
SN  - 0038-1101
SP  - 801
EP  - 804
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Cambel, V.
A1  - Kicin, S.
A1  - Kuliffayová, M.
T1  - Preparation of patterned GaAs structures for MEMS and MOEMS. Cambel, V.; Kicin, S.; Kuliffayová, M.; Kovácová, E.; Novák, J.; Kostic, I.; Förster, A.
JF  - Materials Science and Engineering: C. 19 (2002), H. 2
Y1  - 2002
SN  - 0928-4931
SP  - 161
EP  - 165
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Darmo, J.
A1  - Dubecky, F.
A1  - Kordos, P.
T1  - Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs. Darmo, J.; Dubecky, F.; Kordos, P.; Förster, A.
JF  - Applied Physics Letters. 72 (1998), H. 5
Y1  - 1998
SN  - 1077-3118
SP  - 590
EP  - 592
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Darmo, J.
A1  - Dubecký, F.
A1  - Kordos, P.
T1  - Annealing characteristics of native defects in low-temperature-grown MBE GaAs / J. Darmo ; F. Dubecky ; P. Kordos ; A. Förster
JF  - Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE]
Y1  - 1996
SN  - 0-7803-3095-1
N1  - 2. ISBN: 0-7803-3179-6 ; Conference on Semiconducting and Insulating Materials <9, 1996, Toulouse> ; Institute of Electrical and Electronics Engineers ; IEEE Cat. No.96CH35881
SP  - 67
EP  - ff.
CY  - Piscataway, NJ [u.a.]
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Darmo, J.
A1  - Dubecký, F.
A1  - Kordos, P.
T1  - Deep-level states and electrical properties of GaAs grown at 250 °C / J. Darmo ; F. Dubecký ; P. Kordos ; A. Förster ...
JF  - Materials science and engineering B: Solid&#150; state materials for advanced technology. 28 (1994), H. 1-3
Y1  - 1994
SN  - 0921-5107
SP  - 393
EP  - 396
ER  -