TY - JOUR A1 - Förster, Arnold A1 - Darmo, J. A1 - Dubecký, F. A1 - Kordos, P. T1 - Annealing characteristics of native defects in low-temperature-grown MBE GaAs / J. Darmo ; F. Dubecky ; P. Kordos ; A. Förster JF - Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE] Y1 - 1996 SN - 0-7803-3095-1 N1 - 2. ISBN: 0-7803-3179-6 ; Conference on Semiconducting and Insulating Materials <9, 1996, Toulouse> ; Institute of Electrical and Electronics Engineers ; IEEE Cat. No.96CH35881 SP - 67 EP - ff. CY - Piscataway, NJ [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Darmo, J. A1 - Dubecký, F. A1 - Kordos, P. T1 - Deep-level states and electrical properties of GaAs grown at 250 °C / J. Darmo ; F. Dubecký ; P. Kordos ; A. Förster ... JF - Materials science and engineering B: Solid– state materials for advanced technology. 28 (1994), H. 1-3 Y1 - 1994 SN - 0921-5107 SP - 393 EP - 396 ER - TY - JOUR A1 - Förster, Arnold A1 - Darmo, J. A1 - Dubecky, F. A1 - Kordos, P. T1 - Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs. Darmo, J.; Dubecky, F.; Kordos, P.; Förster, A. JF - Applied Physics Letters. 72 (1998), H. 5 Y1 - 1998 SN - 1077-3118 SP - 590 EP - 592 ER - TY - JOUR A1 - Förster, Arnold A1 - Cambel, V. A1 - Kicin, S. A1 - Kuliffayová, M. T1 - Preparation of patterned GaAs structures for MEMS and MOEMS. Cambel, V.; Kicin, S.; Kuliffayová, M.; Kovácová, E.; Novák, J.; Kostic, I.; Förster, A. JF - Materials Science and Engineering: C. 19 (2002), H. 2 Y1 - 2002 SN - 0928-4931 SP - 161 EP - 165 ER - TY - JOUR A1 - Förster, Arnold A1 - Brugger, H. A1 - Meiners, U. A1 - Diniz, R. T1 - Hydrostatic pressure sensors based on solid state tunneling devices / H. Brugger; U. Meiners ; R. Diniz ... A. Förster ... JF - Solid state electronics. 37 (1994), H. 4-6 Y1 - 1994 SN - 0038-1101 SP - 801 EP - 804 ER - TY - JOUR A1 - Förster, Arnold A1 - Brugger, H. A1 - Meiners, U. T1 - High quality GaAs-based resonant tunneling diodes for high frequency device applications / H. Brugger ; U. Meiners ; C. Wölk ... A. Förster ... JF - Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman Y1 - 1991 SN - 0-7803-0491-8 N1 - Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits <1991, Ithaca, NY> SP - 39 EP - ff. PB - Inst. of Electrical and Electronics Engineers CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Betko, J. A1 - Morvic, M. A1 - Novak, J. T1 - Magnetoresistance in low-temperature grown molecular-beam epitaxial GaAs. Betko, J.; Morvic, M.; Novak, J.; Förster, A.; Kordos, P. JF - Journal of Applied Physics. 86 (1999), H. 11 Y1 - 1999 SN - 1089-7550 SP - 6243 EP - 6248 ER - TY - JOUR A1 - Förster, Arnold A1 - Betko, J. A1 - Morvic, M. A1 - Novak, J. T1 - Hall mobility analysis in low-temperature-grown molecular-beam epitaxial GaAs / J. Betko , M. Morvic ; J. Novák ... A. Förster ... JF - Applied physics letters. 69 (1996), H. 17 Y1 - 1996 SN - 0003-6951 N1 - ISSN der E-Ausg.: 1077-3118 SP - 2563 EP - 2565 ER - TY - JOUR A1 - Förster, Arnold A1 - Betko, J. A1 - Kordos, P. A1 - Kuklovsky, S. T1 - Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature / J. Betko ; P. Kordos ; S. Kuklovsky ; A. Förster ... JF - Materials science and engineering B: Solid– state materials for advanced technology. 28 (1994), H. 1-3 Y1 - 1994 SN - 0921-5107 SP - 147 EP - 150 ER - TY - JOUR A1 - Förster, Arnold A1 - Bertuccio, G. A1 - Pullia, A. T1 - Pixel X-ray detectors in epitaxial gallium arsenide withhigh-energy resolution capabilities (Fano factor experimentaldetermination) / G. Bertuccio ; A. Pullia ; J. Lauter ; A. Förster ... JF - IEEE transactions on nuclear science. 44 (1997), H. 1 Y1 - 1997 SN - 0018-9499 SP - 1 EP - 5 ER - TY - JOUR A1 - Förster, Arnold A1 - Belyaev, A. E. A1 - Vitusevich, S.A. A1 - Eaves, L. T1 - Photoresponse spectra in p-i-n diodes containing quantum dots. Belyaev, A.E.; Vitusevich, S.A.; Eaves, L.; Main, P.C.; Henini, M.; Förster, A.; Reetz, W.; Danylyuk, S.V. JF - Nanotechnology. 13 (2002), H. 1 Y1 - 2002 SP - 94 EP - 96 ER - TY - JOUR A1 - Förster, Arnold A1 - Appenzeller, J. A1 - Schroer, C. T1 - Electron interference in a T-shaped quantum transistor based on Schottky-gate technology / J. Appenzeller ; Ch. Schroer ; Th. Schäpers ... A. Förster ... JF - Physical review / B, Condensed matter and materials physics. 53 (1996), H. 15 Y1 - 1996 SN - 1095-3795 SP - 9959 EP - 9963 ER - TY - JOUR A1 - Förster, Arnold A1 - Adam, R. A1 - Mikulics, M. A1 - Schelten, J. T1 - Fabrication and subpicosecond optical response of low-temperature-grown GaAs freestanding photoconductive devices. Adam, R.; Mikulics, M.; Forster, A.; Schelten, J.; Siegel, M.; Kordos, P.; Zheng, X.; Wu, S.; Sobolewski, R. JF - Applied Physics Letters. 81 (2002), H. 18 Y1 - 2002 SN - 1077-3118 SP - 3485 EP - 3487 ER - TY - JOUR A1 - Förster, Arnold T1 - Ultrahigh frequency measurements of magnetic penetration length and surface impedance of YBa2Cu3O7–x microstriplines on Si and GaAs substrates . Rüders, F; Hollricher, O.; Copetti, C. A. ; Förster, A. ; Buchal, Ch. ; Prusseit, W. ; Kinder, H. JF - Journal of Applied Physics. 77 (1995), H. 10 Y1 - 1995 SN - 1089-7550 SP - 5282 EP - 5286 ER - TY - JOUR A1 - Förster, Arnold T1 - Layer Deposition I JF - Fundamentals of nanoelectronics / Stefan Blügel ... (ed.). - (Lecture manuscripts of the ... Spring School of the Department of Solid State Research ; 34). - (Schriften des Forschungszentrums Jülich : Materie und Material ; 14 ; 34) Y1 - 2003 SN - 3-89336-319-X SP - C2.1 EP - C2.13 PB - Forschungszentrum, Zentralbibliothek CY - Jülich ER - TY - JOUR A1 - Förster, Arnold T1 - Resonant tunneling diodes operating as modern quantum transport devices JF - Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices : (December 14 - 18, 1999) / ed.: Vikram Kumar ... - Vol. 2 Y1 - 2000 SN - 81-7023-998-2 N1 - International Workshop on the Physics of Semiconductor Devices <10, 1999, Delhi> SP - 966 EP - 966 PB - Allied Publ. CY - New Delhi [u.a.] ER - TY - JOUR A1 - Förster, Arnold T1 - Resonant tunneling diodes : the effect of structural properties on their performance JF - Festkörperprobleme = Advances in solid state physics. 33 (1994) Y1 - 1994 SN - 0065-3357 N1 - Review ; 2. ISSN: 0430-3393 SP - 37 EP - 62 ER - TY - JOUR A1 - Frauenrath, Tobias A1 - Hezel, Fabian A1 - Heinrichs, Uwe A1 - Kozerke, Sebastian A1 - Utting, Jane A1 - Kob, Malte A1 - Butenweg, Christoph A1 - Boesiger, Peter A1 - Niendorf, Thoralf T1 - Feasibility of Cardiac Gating Free of Interference With Electro-Magnetic Fields at 1.5 Tesla, 3.0 Tesla and 7.0 Tesla Using an MR-Stethoscope JF - Investigative Radiology KW - phonocardiogram KW - electrocardiogram KW - cardiac gating KW - high field MR imaging KW - cardiovascular MR imaging Y1 - 2009 U6 - http://dx.doi.org/10.1097/RLI.0b013e3181b4c15e SN - 1536-0210 (online) SN - 0020-9996 (gedruckt) VL - 44 IS - 9 SP - 539 EP - 547 PB - Lippincott Williams & Wilkins ; (via Ovid) CY - Philadelphia, Pa ER - TY - CHAP A1 - Frauenrath, Tobias A1 - Gömmel, Andreas A1 - Butenweg, Christoph A1 - Otten, Mario A1 - Niendorf, Thoralf T1 - 3D mapping of vocal fold geometry during articulatory maneuvers using ultrashort echo time imaging at 3.0 T T2 - ISMRM-ESMRMB joint annual meeting 2010 : Stockholm, Sweden, 1 - 7 May 2010. Band 4 Y1 - 2010 SN - 978-1-617-82008-3 SP - 3087 PB - Curran CY - Red Hook, NY ER - TY - JOUR A1 - Fleischhaker, Robert A1 - Krauß, Nico A1 - Schättiger, Farina A1 - Dekorsy, Thomas T1 - Consistent characterization of semiconductor saturable absorber mirrors with singe-pulse and pump-probe spectroscopy JF - Optics Express Y1 - 2013 U6 - http://dx.doi.org/10.1364/OE.21.006764 SN - 1094-4087 VL - 21 IS - 6 SP - 6764 EP - 6776 PB - Optica CY - Washington, DC ER -