TY  - JOUR
A1  - Zatko, B.
A1  - Dubecký, F.
A1  - Bohacek, P.
A1  - Gombia, E.
A1  - Frigeri, P.
A1  - Mosca, R.
A1  - Franchi, S.
A1  - Huarn, J.
A1  - Nescas, V.
A1  - Sekacova, M.
A1  - Förster, Arnold
A1  - Kordos, P.
T1  - On the spectrometric performance limit of radiation detectors based on semi-insulating GaAs
JF  - Nuclear instruments and methods in physics research, Section A. 531 (2004), H. 1-2
Y1  - 2004
SN  - 0168-9002
SP  - 111
EP  - 120
ER  - 
TY  - JOUR
A1  - Walther, T.
A1  - Gerthsen, D.
A1  - Carius, Reinhard
A1  - Förster, Arnold
T1  - AlAs/GaAs Quantum well structures: Interface properties investigated by high-resolution transmission electron microscopy and photoluminescence spectroscopy / T. Walther ; D. Gerthsen ; R. Carius ; A. Förster ...
JF  - Microscopy of semiconducting materials 1993 : proceedings of the Royal Microscopical Society Conference held at Oxford University, 5 - 8 April 1993 / ed. by A. G. Cullis ... - (Conference series / Institute of Physics ; 134)
Y1  - 1993
SN  - 0-7503-0290-9
N1  - Royal Microscopical Society Conference on Microscopy of Semiconducting Materials <8, 1993, Oxford> ; MSM <8, 1993, Oxford>
SP  - 449
EP  - ff.
PB  - Institute of Physics
CY  - Bristol [u.a.]
ER  - 
TY  - JOUR
A1  - Vitusevich, S. A.
A1  - Förster, Arnold
A1  - Reetz, W.
A1  - Lüth, H.
A1  - Belyaev, A. E.
A1  - Danylyuk, S. V.
T1  - Spectral Responsivity of single-quantum-well photodetectors
JF  - Applied Physics Letters. 77 (2000), H. 1
Y1  - 2000
SN  - 1077-3118
SP  - 16
EP  - 18
ER  - 
TY  - JOUR
A1  - Vitusevich, S. A.
A1  - Förster, Arnold
A1  - Reetz, W.
A1  - Lüth, H.
A1  - Belyaev, A. E.
A1  - Danylyuk, S. V.
T1  - Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode
JF  - Nanotechnology. 11 (2000), H. 4
Y1  - 2000
SN  - 1361-6528
SP  - 305
EP  - 308
ER  - 
TY  - JOUR
A1  - Vitusevich, S. A.
A1  - Förster, Arnold
A1  - Lüth, H.
A1  - Belyaev, A. E.
A1  - Danylyuk, S. V.
A1  - Konakova, R. V.
A1  - Sheka, D. I.
T1  - Resonant spectroscopy of electric-field-induced superlattices
JF  - Journal of Applied Physics. 90 (2001), H. 6
Y1  - 2001
SN  - 1089-7550
U6  - http://dx.doi.org/10.1063/1.1392956
SP  - 2857
EP  - 2861
ER  - 
TY  - JOUR
A1  - Vitusevich, S. A.
A1  - Förster, Arnold
A1  - Indlekofer, K.-M.
A1  - Lüth, H.
A1  - Belyaev, A. E.
A1  - Glavin, B. A.
A1  - Konakova, R. V.
T1  - Tunneling Through X-Valley-Related Impurity States in GaAs/AlAs Resonant-Tunneling Diodes
JF  - Physical  Review . B. 61 (2000), H. 16
Y1  - 2000
SN  - 1550-235X
SP  - 10898
EP  - 10904
ER  - 
TY  - JOUR
A1  - Ungermanns, C.
A1  - Ahe, M. v. d.
A1  - Carius, Reinhard
A1  - Förster, Arnold
T1  - Optimization of III/V binary growth with RHEED in MOMBE / C. Ungermanns ; M. v. d. Ahe ; R. Carius ; A. Förster ...
JF  - Fresenius' Journal of Analytical Chemistry. 358 (1997), H. 1-2
Y1  - 1997
SN  - 0937-0633
N1  - ISSN der E-Ausg.: 1432-1130
SP  - 101
EP  - 104
ER  - 
TY  - JOUR
A1  - Tillmann, K.
A1  - Förster, Arnold
T1  - Critical dimensions for the formation of interfacial misfit dislocations of In0.6Ga0.4As islands on GaAs(001)
JF  - Thin Solid Films. 368 (2000), H. 1
Y1  - 2000
SN  - 0040-6090
SP  - 93
EP  - 104
ER  - 
TY  - JOUR
A1  - Stock, J.
A1  - Malindretos, J.
A1  - Indlekofer, K.M.
A1  - Pöttgens, Michael
A1  - Förster, Arnold
A1  - Lüth, Hans
T1  - A Vertical Resonant Tunneling Transistor for Application in Digital Logic Circuits
JF  - IEEE Transactions on Electron Devices (T-ED). 48 (2001), H. 6
Y1  - 2001
SN  - 0018-9383
SP  - 1028
EP  - 1032
ER  - 
TY  - JOUR
A1  - Srnanek, R.
A1  - Geurts, J.
A1  - Lentze, M.
A1  - Irmer, G.
A1  - Donoval, D.
A1  - Brdecka, P.
A1  - Kordos, P.
A1  - Förster, Arnold
A1  - Sciana, B.
A1  - Radziewicz, D.
A1  - Tlaczala, M.
T1  - Study of d-doped GaAs layers by micro-Raman spectroscopy on bevelled samples
JF  - Applied surface science  . 230 (2004), H. 1 -4
Y1  - 2004
SN  - 0169-4332
N1  - ISSN der E-Ausg.: 0169-4332
SP  - 379
EP  - 385
ER  - 
TY  - JOUR
A1  - Schmidt, R.
A1  - Tonnesmann, A.
A1  - Förster, Arnold
A1  - Grimm, M.
A1  - Kordos, P.
A1  - Lüth, H.
T1  - Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates using an InP buffer layer
JF  - 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO 2000 ; [13 - 14 November 2000, University of Glasgow] / organised by Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow Scotland. MTT/ED/AP/LEO Societies Joint Chapter, United Kingdom and Republic of Ireland Section. With technical co-sponsorship from IEEE Electron Device Society
Y1  - 2000
SN  - 0-7803-6550-X
N1  - EDMO <8, 2000, Glasgow> ; University <Glasgow> / Department of Electronics and Electrical Engineering ; IEEE catalog number 00TH8534
SP  - 95
EP  - 98
PB  - IEEE Operations Center
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Sabitova, A.
A1  - Ebert, Ph.
A1  - Lenz, A.
A1  - Schaafhausen, S.
A1  - Ivanova, L.
A1  - Dähne, M.
A1  - Hoffmann, A.
A1  - Dunin-Borkowski, R. E.
A1  - Förster, Arnold
A1  - Grandidier, B.
A1  - Eisele, H.
T1  - Intrinsic bandgap of cleaved ZnO(112¯0) surfaces
JF  - Applied physics letters
Y1  - 2013
SN  - 1077-3118 (E-Journal); 0003-6951 (Print)
VL  - Vol. 102
SP  - 021608
ER  - 
TY  - JOUR
A1  - Rosenauer, A.
A1  - Oberst, W.
A1  - Litvinov, D.
A1  - Gerthsen, D.
A1  - Förster, Arnold
A1  - Schmidt, R.
T1  - Structural and Chemical Investigation of In-0.6Ga0.4As Stranski-Krastanow Layers Burried in GaAs by Transmission Electron Microscopy
JF  - Physical Review B. 61 (2000), H. 12
Y1  - 2000
SN  - 1095-3795
SP  - 8276
EP  - 8288
ER  - 
TY  - JOUR
A1  - Mikulics, M.
A1  - Marso, M.
A1  - Cámara Mayorga, I.
A1  - Gusten, R.
A1  - Stancek, S.
A1  - Michael, E. A.
A1  - Schieder, R.
A1  - Wolter, M.
A1  - Buca, D.
A1  - Förster, Arnold
A1  - Kordos, P.
A1  - Lüth, H.
T1  - Photomixers fabricated on nitrogen-ion-implanted GaAs
JF  - Applied physics letters. 87 (2005)
Y1  - 2005
SP  - 041106-1
EP  - 041106-3
ER  - 
TY  - JOUR
A1  - Mikulics, M.
A1  - Camara, I.
A1  - Hardt, A. van der
A1  - Fox, A.
A1  - Förster, Arnold
A1  - Gusten, R.
A1  - Lüth, H.
A1  - Kordos, P.
T1  - Generation of THz radiation by photomixing in low-temperature-grown MBE GaAs
JF  - Fifth International Conference on Advanced Semiconductor Devices and Microsystems : conference proceedings ; Smolenice Castle, Slovakia, October 17 - 21, 2004 / [organizers: Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by J. Osvald
Y1  - 2004
SN  - 0-7803-8335-7
N1  - International Conference on Advanced Semiconductor Devices and Microsystems <5, 2004, Smolenice> ; ASDAM <5, 2004, Smolenice> ; IEEE catalog numer: 04EX867
SP  - 231
EP  - 234
PB  - IEEE Operations Center
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Mikulics, M.
A1  - Adam, R.
A1  - Kordos, P.
A1  - Förster, Arnold
A1  - Lüth, H.
A1  - Wu, S.
A1  - Zheng, X.
A1  - Sobolewski, R.
T1  - Ultrafast low-temperature-grown epitaxial GaAs photodetectors transferred on flexible plastic substrates
JF  - IEEE photonics technology letters : IEEE PTL. 17 (2005), H. 8
Y1  - 2005
SN  - 1041-1135
SP  - 1725
EP  - 1727
ER  - 
TY  - JOUR
A1  - Maezawa, Koichi
A1  - Förster, Arnold
T1  - Quantum transport devices based on resonant tunneling
JF  - Nanoelectronics and information technology : advanced electronic materials and novel devices / Rainer Waser (ed.).
Y1  - 2003
SN  - 3-527-40363-9
SP  - 407
EP  - 424
PB  - Wiley-VCH
CY  - Weinheim
ER  - 
TY  - JOUR
A1  - Krafft, B.
A1  - Förster, Arnold
A1  - Hart, A. van der
A1  - Schäpers, T.
T1  - Control of Aharonov-Bohm oscillations in a AlGaAs/GaAs ring by asymmetric and symmetric gate biasing
JF  - Physica E: Low-dimensional Systems and Nanostructures. 9 (2001), H. 4
Y1  - 2001
SN  - 1386-9477
SP  - 635
EP  - 641
ER  - 
TY  - JOUR
A1  - Hoskens, R.C.P.
A1  - Roer, T.G. van de
A1  - Tolstikhin, V.I.
A1  - Förster, Arnold
T1  - Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation
JF  - LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2
Y1  - 2000
SN  - 0-7803-5947-X
N1  - 2000 IEEE LEOS annual meeting
SP  - 444
EP  - 445
PB  - IEEE Service Center
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Hoskens, R. C. P.
A1  - Tolstikhin, V.I.
A1  - Förster, Arnold
A1  - Roer, T.G. van de
T1  - Vertically integrated transistor-laser structure, take 2
JF  - WOCSDICE  2000, 24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe : May 29 - June 02, 2000, Aegean Sea, Greece.
Y1  - 2000
SN  - 0970311109
N1  - WOCSDICE ; (24, 2000) Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe ; (24 : ; 2000.05.29-06.02)
PB  - Univ. of Michigan
CY  - Ann Arbor, Mich.
ER  -