TY  - JOUR
A1  - Helsper, Christoph
A1  - Fißan, H. J.
A1  - Muggli, J.
A1  - Scheidweiler, A.
T1  - Verification of Ionization Chamber Theory
JF  - Fire Technology. 19 (1983), H. 1
Y1  - 1983
SN  - 1572-8099
SP  - 14
EP  - 21
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Malzer, S.
A1  - Heber, J.
A1  - Peter, M.
T1  - Vertical transport and relaxation mechanisms in d-doping superlattices. Malzer, S.; Heber, J.; Peter, M.; Eckl, S.; Elpelt, R.; Doehler, G. H.; Förster, A.; Lüth, H.
JF  - Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4
Y1  - 1998
SN  - 1386-9477
SP  - 349
EP  - 352
ER  - 
TY  - JOUR
A1  - Vogt, C.
A1  - Mottaghy, Darius
A1  - Rath, V.
A1  - Marquart, G.
A1  - Dijkshoorn, L.
A1  - Wolf, A.
A1  - Clauser, C.
T1  - Vertical variation in heat flow on the Kola Peninsula: palaeoclimate or fluid flow?
JF  - Geophysical Journal International
N2  - Following earlier studies, we present forward and inverse simulations of heat and fluid transport of the upper crust using a local 3-D model of the Kola area. We provide best estimates for palaeotemperatures and permeabilities, their errors and their dependencies. Our results allow discriminating between the two mentioned processes to a certain extent, partly resolving the non-uniqueness of the problem. We find clear indications for a significant contribution of advective heat transport, which, in turn, imply only slightly lower ground surface temperatures during the last glacial maximum relative to the present value. These findings are consistent with the general background knowledge of (i) the fracture zones and the corresponding fluid movements in the bedrock and (ii) the glacial history of the Kola area.
Y1  - 2014
U6  - https://doi.org/10.1093/gji/ggu282
SN  - 1365-246X
VL  - 199
IS  - 2
SP  - 829
EP  - 843
PB  - Oxford University Press
CY  - Oxford
ER  - 
TY  - JOUR
A1  - Hoskens, R. C. P.
A1  - Tolstikhin, V.I.
A1  - Förster, Arnold
A1  - Roer, T.G. van de
T1  - Vertically integrated transistor-laser structure, take 2
JF  - WOCSDICE  2000, 24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe : May 29 - June 02, 2000, Aegean Sea, Greece.
Y1  - 2000
SN  - 0970311109
N1  - WOCSDICE ; (24, 2000) Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe ; (24 : ; 2000.05.29-06.02)
PB  - Univ. of Michigan
CY  - Ann Arbor, Mich.
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Novák, J.
A1  - Morvic, M.
T1  - Wet chemical separation of low-temperature GaAs layers from their GaAs substrates / J. Novák ; M. Morvic ;  J. Betko ; A. Förster ...
JF  - Materials science and engineering / B, Solid state materials for advanced technology. 40 (1996), H. 1
Y1  - 1996
SN  - 0921-5107
SP  - 58
EP  - 62
ER  -