TY - JOUR A1 - Förster, Arnold A1 - Kordos, P. A1 - Betko, J. T1 - Semi-insulating GaAs layers grown by molecular-beam epitaxy / P. Kordos ; A. Förster ; J. Betko ... JF - Applied physics letters. 67 (1995), H. 7 Y1 - 1995 SN - 0003-6951 N1 - ISSN der E-Ausg.: 1077-3118 SP - 983 EP - 985 ER - TY - JOUR A1 - Förster, Arnold A1 - Kordos, P. A1 - Betko, J. T1 - Electrical and structural characterization of MBE GaAs grown at temperatures between 200 and 600 °C / P. Kordos ; J. Betko; A. Förster ... JF - Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141) Y1 - 1995 SN - 0-7503-0226-7 N1 - International Symposium on Compound Semiconductors <21, 1994, San Diego, Calif.> ; Institute of Physics SP - 295 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Kohleick, R. A1 - Lüth, H. T1 - Ga segregation and the effect of Si and Ge interlayers at the GaAs(100)/AlAs heterostructure / R. Kohleick ; A. Förster ; H. Lüth JF - Physical Review B . 48 (1993), H. 20 Y1 - 1993 SN - 0163-1829 N1 - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795 SP - 15138 EP - 15143 ER - TY - JOUR A1 - Förster, Arnold A1 - Klemradt, U. A1 - Funke, M. A1 - Fromm, M T1 - Growth-induced interface roughness of GaAs/AlAs-layers studied by X-ray scattering under grazing angles / U. Klemradt ; M. Funke ; M. Fromm ... A Förster JF - Physica B: condensed matter. 221 (1996), H. 1-4 Y1 - 1996 SN - 0921-4526 SP - 27 EP - 33 ER - TY - JOUR A1 - Förster, Arnold A1 - Kiesslich, G. A1 - Wacker, A. A1 - Scholl, E. T1 - Nonlinear charging effect of quantum dots in a p-i-n diode. Kiesslich, G.; Wacker, A.; Scholl, E.; Vitusevich, S.A.; Belyaev, A.E.; Danylyuk, S.V.; Forster, A.; Klein, N.; Henini, M. JF - Physical Review B. 68 (2003) Y1 - 2003 SN - 1550-235X N1 - 125331 (6 Seiten) ER - TY - JOUR A1 - Förster, Arnold A1 - Kicin, S A1 - Cambel, V. A1 - Kuliffayova, M. T1 - Fabrication of GaAs symmetric pyramidal mesas prepared by wet-chemical etching using AlAs interlayer. Kicin, S.; Cambel, V.; Kuliffayova, M.; Gregusova, D.; Kovacova, E.; Novak, J.; Kostic, I.; Forster, A. JF - Journal of Applied Physics. 91 (2002), H. 2 Y1 - 2002 SN - 1089-7550 SP - 878 EP - 880 ER - TY - JOUR A1 - Förster, Arnold A1 - Janssen, G. A1 - Roer, T. G. van de T1 - Logic Circuits with reduced complexity based on devices with higher functionality / G. Janssen ; T. G. van de Roer ; W. Prost ... A. Förster JF - Proceedings / STW/SAFE 2nd Annual Workshop on Semiconductor Advances for Future Electronics, Safe '99 - ProRISC/IEEE 10th Annual Workshop on Circuits, Systems and Signal Processing, ProRISC 99 : November 24 - 26, 1999, Mierlo, The Netherlands [Elektronische Ressource] Y1 - 1999 N1 - SAFE <2, 1999, Mierlo> ; Workshop on Circuits, Systems and Signal Processing <10, 1999, Mierlo> ; Stichting voor de Technische Wetenschappen SP - 219 PB - Technology Foundation, STW CY - Utrecht ER - TY - JOUR A1 - Förster, Arnold A1 - Indlekofer, K.M. A1 - Lüth, H. T1 - Density-matrix description of a quantum dot system with variable lateral confinement in the single-electron tunneling regime. Indlekofer, K.M.; Förster, A.; Lüth, H. JF - Physica B: Condensed Matter. 314 (2002), H. 1-4 Y1 - 2002 SN - 0921-4526 SP - 499 EP - 502 ER - TY - JOUR A1 - Förster, Arnold A1 - Indlekofer, K. A1 - Lange, J. T1 - Theory of single-electron tunneling in resonant-tunneling diodes including scattering and multiple subbands at finite temperature / K. M. Indlekofer ; J. Lange ; A. Förster ... JF - Physical review / B, Condensed matter and materials physics. 53 (1996), H. 11 Y1 - 1996 SN - 1095-3795 SP - 7392 EP - 7402 ER - TY - JOUR A1 - Förster, Arnold A1 - Hu, Quing A1 - Verghese, S. T1 - High-frequency (f ~ 1 THz) studies of quantum-effect devices / Qing Hu ; S. Verghese ; R. A. Wyss ... A. Förster JF - Semiconductor science and technology. 11 (1996), H. 12 Y1 - 1996 SN - 1361-6641 SP - 1888 EP - 1894 ER - TY - JOUR A1 - Förster, Arnold A1 - Hauke, M. A1 - Jakumeit, J. A1 - Krafft, B. T1 - DX Centers in Al0.3Ga0.7As/GaAs Analyzed by Point Contact Measurements. Hauke, M.; Jakumeit, J.; Krafft, B.; Nimtz, G.; Förster, A.; Lüth, H. JF - Journal of Applied Physics. 84 (1998), H. 4 Y1 - 1998 SN - 1089-7550 SP - 2034 EP - 2039 ER - TY - JOUR A1 - Förster, Arnold A1 - Hartmann, A. A1 - Dieker, Ch. A1 - Hollfelder, M. T1 - Spontaneous formation of tilted AlGaAS/GaAs superlattice during AlGaAs growth. Hartmann, A.; Dieker, Ch.; Hollfelder, M.; Hardtdegen, H.; Förster, A.; Lüth, H. JF - Applied Surface Science. 123-124 (1998) Y1 - 1998 SN - 0169-4332 N1 - = Proceedings of the Sixth International Conference on the Formation of Semiconductor Interfaces SP - 704 EP - 709 ER - TY - JOUR A1 - Förster, Arnold A1 - Hardtdegen, Hilde A1 - Ungermanns, C. T1 - Comparative investigation of electrical and optical characteristics of AlxGa1-xAs/GaAs structures deposited by LP-MOVPE and MBE / H. Hardtdegen ; M. Hollfelder ; C. Ungermanns ... A. Förster ... JF - Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141) Y1 - 1995 SN - 0-7503-0226-7 N1 - International Symposium on Compound Semiconductors <21, 1994, San Diego, Calif.> ; Institute of Physics SP - 81 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Griebel, M. A1 - Indlekofer, M. A1 - Lüth, H. T1 - Transport through a buried double barrier single electron transistor at low temperatures JF - Physica E: Low-dimensional Systems and Nanostructures. 2 (1998), H. 1-4 Y1 - 1998 SN - 1386-9477 SP - 502 EP - 506 ER - TY - JOUR A1 - Förster, Arnold A1 - Griebel, M. A1 - Indlekofer, K.M. A1 - Lüth, H. T1 - Single electron transport in resonant tunnelling diodes laterally confined by ion implantation. Griebel, M.; Indlekofer, K.M.; Förster, A.; Lüth, H. JF - Journal of Physics D: Applied Physics. 32 (1999), H. 14 Y1 - 1999 SN - 1361-6463 SP - 1729 EP - 1733 ER - TY - JOUR A1 - Förster, Arnold A1 - Griebel, M. A1 - Indlekofer, K. M. A1 - Lüth, H. T1 - Transport properties of gated resonant tunneling diodes in the single electron regime. Griebel, M.; Indlekofer, K. M.; Förster, A.; Lüth, H. JF - Journal of Applied Physics. 84 (1998), H. 12 Y1 - 1998 SN - 1089-7550 SP - 6719 EP - 6724 ER - TY - JOUR A1 - Förster, Arnold A1 - Döhler, G. H A1 - Heber, J. T1 - Hot electrons in n-i-p.i-based devices / G. H. Döhler ; J. Heber ... A. Förster ... JF - Hot electrons in semiconductors : physics and devices / ed. by N. Balkan. - (Series on semiconductor science and technology ; 5) Y1 - 1998 SN - 0-19-850058-0 SP - 478 EP - 504 PB - Clarendon Press CY - Oxford ER - TY - JOUR A1 - Förster, Arnold A1 - Dubecky, F.. A1 - Darmo, J. T1 - Investigation of deep-level states in bulk and low temperature MBE semiinsulating GaAs by admittance transient spectroscopy / F. Dubecky ; J. Darmo ; M. Darviras ; A. Förster ... JF - Semi-insulating III-V materials, Ixtapa, Mexico 1992 : proceedings of the 7th Conference on Semi-insulating III-V Materials, Ixtapa, Mexico, 21 - 24 April 1992 / ed. by C. J. Miner ... Y1 - 1994 SN - 0-7503-0242-9 N1 - Conference on Semi-Insulating III-V Materials <7, 1992, Ixtapa> SP - 265 EP - 272 PB - Inst. of Physics Publ. CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Dieker, C. A1 - Gerthsen, D. T1 - Microstructure of the AlAs/GaAs and AlAs/InGaAs resonant tunneling diodes and its correlation with the electrical properties / C. Dieker ; D. Gerthsen ; A. Förster ... JF - Microscopy of semiconducting materials 1993 : proceedings of the Royal Microscopical Society Conference held at Oxford University, 5 - 8 April 1993 / ed. by A. G. Cullis ... - (Conference series / Institute of Physics ; 134) Y1 - 1993 SN - 0-7503-0290-9 N1 - Royal Microscopical Society Conference on Microscopy of Semiconducting Materials <8, 1993, Oxford> ; MSM <8, 1993, Oxford> SP - 253 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Dekorsy, T. A1 - Kim, A. T. M. T1 - Subpicosecond coherent carrier-phonon dynamics in semiconductor heterostructures / T. Dekorsy ; A. M. T. Kim ; G. C. Cho ... A. Förster JF - Physical review / B, Condensed matter and materials physics. 53 (1996), H. 3 Y1 - 1996 SN - 1095-3795 SP - 1531 EP - 1538 ER - TY - JOUR A1 - Förster, Arnold A1 - Darmo, J. A1 - Schafer, F. A1 - Kordos, P. T1 - Thermal resistance of the semiconductor structures for a photomixing device. Darmo, J.; Schafer, F.; Forster, A.; Kordos, P.; Gusten, R JF - Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza Y1 - 2002 SN - 0-7803-7276-X N1 - International Conference on Advanced Semiconductor Devices and Microsystems ; (4, 2002, Smolenice). ASDAM '02 ; (4 : ; 2002.10.14-16 : ; Smolenice) SP - 87 EP - 90 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Darmo, J. A1 - Dubecký, F. A1 - Kordos, P. T1 - Annealing characteristics of native defects in low-temperature-grown MBE GaAs / J. Darmo ; F. Dubecky ; P. Kordos ; A. Förster JF - Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE] Y1 - 1996 SN - 0-7803-3095-1 N1 - 2. ISBN: 0-7803-3179-6 ; Conference on Semiconducting and Insulating Materials <9, 1996, Toulouse> ; Institute of Electrical and Electronics Engineers ; IEEE Cat. No.96CH35881 SP - 67 EP - ff. CY - Piscataway, NJ [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Darmo, J. A1 - Dubecký, F. A1 - Kordos, P. T1 - Deep-level states and electrical properties of GaAs grown at 250 °C / J. Darmo ; F. Dubecký ; P. Kordos ; A. Förster ... JF - Materials science and engineering B: Solid– state materials for advanced technology. 28 (1994), H. 1-3 Y1 - 1994 SN - 0921-5107 SP - 393 EP - 396 ER - TY - JOUR A1 - Förster, Arnold A1 - Darmo, J. A1 - Dubecky, F. A1 - Kordos, P. T1 - Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs. Darmo, J.; Dubecky, F.; Kordos, P.; Förster, A. JF - Applied Physics Letters. 72 (1998), H. 5 Y1 - 1998 SN - 1077-3118 SP - 590 EP - 592 ER - TY - JOUR A1 - Förster, Arnold A1 - Cambel, V. A1 - Kicin, S. A1 - Kuliffayová, M. T1 - Preparation of patterned GaAs structures for MEMS and MOEMS. Cambel, V.; Kicin, S.; Kuliffayová, M.; Kovácová, E.; Novák, J.; Kostic, I.; Förster, A. JF - Materials Science and Engineering: C. 19 (2002), H. 2 Y1 - 2002 SN - 0928-4931 SP - 161 EP - 165 ER - TY - JOUR A1 - Förster, Arnold A1 - Brugger, H. A1 - Meiners, U. A1 - Diniz, R. T1 - Hydrostatic pressure sensors based on solid state tunneling devices / H. Brugger; U. Meiners ; R. Diniz ... A. Förster ... JF - Solid state electronics. 37 (1994), H. 4-6 Y1 - 1994 SN - 0038-1101 SP - 801 EP - 804 ER - TY - JOUR A1 - Förster, Arnold A1 - Brugger, H. A1 - Meiners, U. T1 - High quality GaAs-based resonant tunneling diodes for high frequency device applications / H. Brugger ; U. Meiners ; C. Wölk ... A. Förster ... JF - Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman Y1 - 1991 SN - 0-7803-0491-8 N1 - Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits <1991, Ithaca, NY> SP - 39 EP - ff. PB - Inst. of Electrical and Electronics Engineers CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Betko, J. A1 - Morvic, M. A1 - Novak, J. T1 - Magnetoresistance in low-temperature grown molecular-beam epitaxial GaAs. Betko, J.; Morvic, M.; Novak, J.; Förster, A.; Kordos, P. JF - Journal of Applied Physics. 86 (1999), H. 11 Y1 - 1999 SN - 1089-7550 SP - 6243 EP - 6248 ER - TY - JOUR A1 - Förster, Arnold A1 - Betko, J. A1 - Morvic, M. A1 - Novak, J. T1 - Hall mobility analysis in low-temperature-grown molecular-beam epitaxial GaAs / J. Betko , M. Morvic ; J. Novák ... A. Förster ... JF - Applied physics letters. 69 (1996), H. 17 Y1 - 1996 SN - 0003-6951 N1 - ISSN der E-Ausg.: 1077-3118 SP - 2563 EP - 2565 ER - TY - JOUR A1 - Förster, Arnold A1 - Betko, J. A1 - Kordos, P. A1 - Kuklovsky, S. T1 - Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature / J. Betko ; P. Kordos ; S. Kuklovsky ; A. Förster ... JF - Materials science and engineering B: Solid– state materials for advanced technology. 28 (1994), H. 1-3 Y1 - 1994 SN - 0921-5107 SP - 147 EP - 150 ER - TY - JOUR A1 - Förster, Arnold A1 - Bertuccio, G. A1 - Pullia, A. T1 - Pixel X-ray detectors in epitaxial gallium arsenide withhigh-energy resolution capabilities (Fano factor experimentaldetermination) / G. Bertuccio ; A. Pullia ; J. Lauter ; A. Förster ... JF - IEEE transactions on nuclear science. 44 (1997), H. 1 Y1 - 1997 SN - 0018-9499 SP - 1 EP - 5 ER - TY - JOUR A1 - Förster, Arnold A1 - Belyaev, A. E. A1 - Vitusevich, S.A. A1 - Eaves, L. T1 - Photoresponse spectra in p-i-n diodes containing quantum dots. Belyaev, A.E.; Vitusevich, S.A.; Eaves, L.; Main, P.C.; Henini, M.; Förster, A.; Reetz, W.; Danylyuk, S.V. JF - Nanotechnology. 13 (2002), H. 1 Y1 - 2002 SP - 94 EP - 96 ER - TY - JOUR A1 - Förster, Arnold A1 - Appenzeller, J. A1 - Schroer, C. T1 - Electron interference in a T-shaped quantum transistor based on Schottky-gate technology / J. Appenzeller ; Ch. Schroer ; Th. Schäpers ... A. Förster ... JF - Physical review / B, Condensed matter and materials physics. 53 (1996), H. 15 Y1 - 1996 SN - 1095-3795 SP - 9959 EP - 9963 ER - TY - JOUR A1 - Förster, Arnold A1 - Adam, R. A1 - Mikulics, M. A1 - Schelten, J. T1 - Fabrication and subpicosecond optical response of low-temperature-grown GaAs freestanding photoconductive devices. Adam, R.; Mikulics, M.; Forster, A.; Schelten, J.; Siegel, M.; Kordos, P.; Zheng, X.; Wu, S.; Sobolewski, R. JF - Applied Physics Letters. 81 (2002), H. 18 Y1 - 2002 SN - 1077-3118 SP - 3485 EP - 3487 ER - TY - JOUR A1 - Förster, Arnold T1 - Ultrahigh frequency measurements of magnetic penetration length and surface impedance of YBa2Cu3O7–x microstriplines on Si and GaAs substrates . Rüders, F; Hollricher, O.; Copetti, C. A. ; Förster, A. ; Buchal, Ch. ; Prusseit, W. ; Kinder, H. JF - Journal of Applied Physics. 77 (1995), H. 10 Y1 - 1995 SN - 1089-7550 SP - 5282 EP - 5286 ER - TY - JOUR A1 - Förster, Arnold T1 - Layer Deposition I JF - Fundamentals of nanoelectronics / Stefan Blügel ... (ed.). - (Lecture manuscripts of the ... Spring School of the Department of Solid State Research ; 34). - (Schriften des Forschungszentrums Jülich : Materie und Material ; 14 ; 34) Y1 - 2003 SN - 3-89336-319-X SP - C2.1 EP - C2.13 PB - Forschungszentrum, Zentralbibliothek CY - Jülich ER - TY - JOUR A1 - Förster, Arnold T1 - Resonant tunneling diodes operating as modern quantum transport devices JF - Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices : (December 14 - 18, 1999) / ed.: Vikram Kumar ... - Vol. 2 Y1 - 2000 SN - 81-7023-998-2 N1 - International Workshop on the Physics of Semiconductor Devices <10, 1999, Delhi> SP - 966 EP - 966 PB - Allied Publ. CY - New Delhi [u.a.] ER - TY - JOUR A1 - Förster, Arnold T1 - Resonant tunneling diodes : the effect of structural properties on their performance JF - Festkörperprobleme = Advances in solid state physics. 33 (1994) Y1 - 1994 SN - 0065-3357 N1 - Review ; 2. ISSN: 0430-3393 SP - 37 EP - 62 ER - TY - JOUR A1 - Frauenrath, Tobias A1 - Hezel, Fabian A1 - Heinrichs, Uwe A1 - Kozerke, Sebastian A1 - Utting, Jane A1 - Kob, Malte A1 - Butenweg, Christoph A1 - Boesiger, Peter A1 - Niendorf, Thoralf T1 - Feasibility of Cardiac Gating Free of Interference With Electro-Magnetic Fields at 1.5 Tesla, 3.0 Tesla and 7.0 Tesla Using an MR-Stethoscope JF - Investigative Radiology KW - phonocardiogram KW - electrocardiogram KW - cardiac gating KW - high field MR imaging KW - cardiovascular MR imaging Y1 - 2009 U6 - http://dx.doi.org/10.1097/RLI.0b013e3181b4c15e SN - 1536-0210 (online) SN - 0020-9996 (gedruckt) VL - 44 IS - 9 SP - 539 EP - 547 PB - Lippincott Williams & Wilkins ; (via Ovid) CY - Philadelphia, Pa ER - TY - CHAP A1 - Frauenrath, Tobias A1 - Gömmel, Andreas A1 - Butenweg, Christoph A1 - Otten, Mario A1 - Niendorf, Thoralf T1 - 3D mapping of vocal fold geometry during articulatory maneuvers using ultrashort echo time imaging at 3.0 T T2 - ISMRM-ESMRMB joint annual meeting 2010 : Stockholm, Sweden, 1 - 7 May 2010. Band 4 Y1 - 2010 SN - 978-1-617-82008-3 SP - 3087 PB - Curran CY - Red Hook, NY ER - TY - JOUR A1 - Fleischhaker, Robert A1 - Krauß, Nico A1 - Schättiger, Farina A1 - Dekorsy, Thomas T1 - Consistent characterization of semiconductor saturable absorber mirrors with singe-pulse and pump-probe spectroscopy JF - Optics Express Y1 - 2013 U6 - http://dx.doi.org/10.1364/OE.21.006764 SN - 1094-4087 VL - 21 IS - 6 SP - 6764 EP - 6776 PB - Optica CY - Washington, DC ER - TY - JOUR A1 - Fleischhaker, Robert A1 - Evers, Jörg A1 - Dey, Tarak N. T1 - Phase modulation induced by cooperative effects in electromagnetically induced transparency JF - Physical Review A - Atomic, molecular, and optical physics N2 - We analyze the influence of dipole-dipole interactions in an electromagnetically induced transparency set up for a density at the onset of cooperative effects. To this end, we include mean-field models for the influence of local-field corrections and radiation trapping into our calculation. We show both analytically and numerically that the polarization contribution to the local field strongly modulates the phase of a weak pulse. We give an intuitive explanation for this local-field-induced phase modulation and demonstrate that it distinctively differs from the nonlinear self-phase-modulation that a strong pulse experiences in a Kerr medium. Y1 - 2010 U6 - http://dx.doi.org/10.1103/PhysRevA.82.013815 SN - 1050-2947 VL - 82 IS - 1 PB - AIP Publishing CY - Melville, NY ER - TY - JOUR A1 - Fleischhaker, Robert A1 - Evers, Jörg T1 - A Maxwell–Schrödinger solver for quantum optical few-level systems JF - Computer Physics Communications N2 - The msprop program presented in this work is capable of solving the Maxwell–Schrödinger equations for one or several laser fields propagating through a medium of quantum optical few-level systems in one spatial dimension and in time. In particular, it allows to numerically treat systems in which a laser field interacts with the medium with both its electric and magnetic component at the same time. The internal dynamics of the few-level system is modeled by a quantum optical master equation which includes coherent processes due to optical transitions driven by the laser fields as well as incoherent processes due to decay and dephasing. The propagation dynamics of the laser fields is treated in slowly varying envelope approximation resulting in a first order wave equation for each laser field envelope function. The program employs an Adams predictor formula second order in time to integrate the quantum optical master equation and a Lax–Wendroff scheme second order in space and time to evolve the wave equations for the fields. The source function in the Lax–Wendroff scheme is specifically adapted to allow taking into account the simultaneous coupling of a laser field to the polarization and the magnetization of the medium. To reduce execution time, a customized data structure is implemented and explained. In three examples the features of the program are demonstrated and the treatment of a system with a phase-dependent cross coupling of the electric and magnetic field component of a laser field is shown. Y1 - 2011 U6 - http://dx.doi.org/10.1016/j.cpc.2010.10.018 SN - 0010-4655 VL - 182 IS - 3 SP - 739 EP - 747 PB - Elsevier CY - Amsterdam ER - TY - JOUR A1 - Fleischhaker, Robert A1 - Evers, Jörg T1 - Nonlinear effects in pulse propagation through Doppler-broadened closed-loop atomic media JF - Physical Review A - Atomic, molecular, and optical physics Y1 - 2008 U6 - http://dx.doi.org/10.1103/PhysRevA.77.043805 SN - 1050-2947 VL - 77 IS - 4 SP - 043805 ER - TY - JOUR A1 - Fleischhaker, Robert A1 - Evers, Jörg T1 - Four-wave mixing enhanced white-light cavity JF - Physical Review A - Atomic, molecular, and optical physics Y1 - 2008 SN - 0556-2791 VL - 78 IS - 5 SP - 051802(R) ER - TY - THES A1 - Fleischhaker, Robert T1 - Light propagation in dense and chiral media Y1 - 2009 N1 - Heidelberg, Univ., Diss., 2009 ER - TY - JOUR A1 - Fischer, W. A. A1 - Dören, Horst-Peter A1 - Janke, Dieter T1 - Aluminium nitride probes for application in iron melts JF - Archiv für das Eisenhüttenwesen. 52 (1981), H. 3 Y1 - 1981 SN - 0003-8962 SP - 91 EP - 98 ER - TY - CHAP A1 - Feldhusen, Jörg A1 - Brezing, Alexander Nikolaus A1 - Pütz, Claus A1 - Wählisch, Georg T1 - Multi-system CAD-teaching in large classes T2 - When design education and design research meet : proceedings of the 12th International Conference on Engineering and Product Design Education, Norwegian University of Science and Technology (NTNU) Trondheim, Norway, 2nd - 3rd September 2010 ; [E&PDE] Y1 - 2010 SN - 978-1-904670-19-3 SP - 204 EP - 209 PB - Design Society CY - Glasgow ER - TY - JOUR A1 - Ewe, Hendrik A1 - Klein, Peter A1 - Pieper, Martin A1 - Füldner, G. T1 - Heat conductivity in sintered aluminium fibers JF - Cellular metals for structural and functional applications : CELLMET 2008 ; proceedings of the International Symposium on Cellular Metals for Structural and Functional Applications held October 8 - 10, 2008 in Dresden, Germany / ed. by Günter Stephani Y1 - 2009 SP - 187 EP - 193 PB - Fraunhofer IFAM CY - Dresden ER - TY - CHAP A1 - Evers, Jörg A1 - Fleischhaker, Robert A1 - Pálffy, A. A1 - Keitel, C. T1 - Light propagation : From atomic to nuclear quantum optics T2 - Modern optics and photonics: atoms and structured media Y1 - 2010 SN - 978-981431327-8 U6 - http://dx.doi.org/10.1142/9789814313278_0001 SP - 3 EP - 15 PB - World Scientific Publishing Co. ER -