TY - JOUR A1 - Förster, Arnold A1 - Lachenmann, S. G. A1 - Friedrich, I. T1 - Charge transport in superconductor/semiconductor/normal-conductor step junctions / S. G. Lachenmann ; I. Friedrich ; A. Förster ... JF - Physical review / B, Condensed matter and materials physics. 56 (1997), H. 21 Y1 - 1997 SN - 1095-3795 SP - 14108 EP - 14115 ER - TY - JOUR A1 - Förster, Arnold A1 - Hardtdegen, Hilde A1 - Ungermanns, C. T1 - Comparative investigation of electrical and optical characteristics of AlxGa1-xAs/GaAs structures deposited by LP-MOVPE and MBE / H. Hardtdegen ; M. Hollfelder ; C. Ungermanns ... A. Förster ... JF - Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141) Y1 - 1995 SN - 0-7503-0226-7 N1 - International Symposium on Compound Semiconductors <21, 1994, San Diego, Calif.> ; Institute of Physics SP - 81 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Rosenauer, A. A1 - Fischer, U. A1 - Gerthsen, D. T1 - Composition evaluation by lattice fringe analysis. Rosenauer, A.; Fischer U.; Gerthsen D.; Förster A. JF - Ultramicroscopy. 72 (1998), H. 3-4 Y1 - 1998 SN - 0304-3991 SP - 121 EP - 133 ER - TY - JOUR A1 - Förster, Arnold A1 - Rosenauer, A. A1 - Fischer, U. A1 - Gerthsen, D. T1 - Composition evaluation of InxGa1 – xAs Stranski-Krastanow-island structures by strain state analysis / A. Rosenauer ; U. Fischer ; D. Gerthsen ; A. Förster JF - Applied physics letters. 71 (1997), H. 26 Y1 - 1997 SN - 0003-6951 N1 - ISSN der E-Ausg.: 1077-3118 SP - 3868 EP - 3870 ER - TY - JOUR A1 - Krafft, B. A1 - Förster, Arnold A1 - Hart, A. van der A1 - Schäpers, T. T1 - Control of Aharonov-Bohm oscillations in a AlGaAs/GaAs ring by asymmetric and symmetric gate biasing JF - Physica E: Low-dimensional Systems and Nanostructures. 9 (2001), H. 4 Y1 - 2001 SN - 1386-9477 SP - 635 EP - 641 ER - TY - JOUR A1 - Förster, Arnold A1 - Schäpers, T. A1 - Müller, F. T1 - Control of ballistic electrons in (AlGa)As/GaAs heterostructures by means of superconducting niobium gate structures / T. Schäpers ; F. Müller ; A. Förster ... JF - Surface Science. 305 (1994), H. 1-3 Y1 - 1994 SN - 0039-6028 N1 - ISSN der E-Ausg.: 0039-6028 SP - 460 EP - 464 ER - TY - JOUR A1 - Tillmann, K. A1 - Förster, Arnold T1 - Critical dimensions for the formation of interfacial misfit dislocations of In0.6Ga0.4As islands on GaAs(001) JF - Thin Solid Films. 368 (2000), H. 1 Y1 - 2000 SN - 0040-6090 SP - 93 EP - 104 ER - TY - JOUR A1 - Förster, Arnold A1 - Verghese, S. A1 - Zamdmer, N. A1 - Hu, Qing T1 - Cryogenic picosecond sampling using fiber-coupled photoconductive switch / S. Verghese ; N. Zamdmer ; Qing Hu ; A. Förster JF - Applied physics letters. 70 (1997), H. 20 Y1 - 1997 SN - 0003-6951 N1 - ISSN der E-Ausg.: 1077-3118 SP - 2644 EP - 2646 ER - TY - JOUR A1 - Förster, Arnold A1 - Darmo, J. A1 - Dubecký, F. A1 - Kordos, P. T1 - Deep-level states and electrical properties of GaAs grown at 250 °C / J. Darmo ; F. Dubecký ; P. Kordos ; A. Förster ... JF - Materials science and engineering B: Solid– state materials for advanced technology. 28 (1994), H. 1-3 Y1 - 1994 SN - 0921-5107 SP - 393 EP - 396 ER - TY - JOUR A1 - Förster, Arnold A1 - Indlekofer, K.M. A1 - Lüth, H. T1 - Density-matrix description of a quantum dot system with variable lateral confinement in the single-electron tunneling regime. Indlekofer, K.M.; Förster, A.; Lüth, H. JF - Physica B: Condensed Matter. 314 (2002), H. 1-4 Y1 - 2002 SN - 0921-4526 SP - 499 EP - 502 ER - TY - JOUR A1 - Förster, Arnold A1 - Rose, D. A1 - Pietsch, U. A1 - Metzger, H. T1 - Depth resolved investigation of the relaxation behaviour in strained GaInAs/GaAs superlattices / Rose, D. ; Pietsch, U. ; Förster, A. ; Metzger, H.... JF - Physica B: condensed matter. 198 (1994), H. 1-3 Y1 - 1994 SN - 0921-4526 SP - 256 EP - 258 ER - TY - JOUR A1 - Förster, Arnold A1 - Rose, D. A1 - Pietsch, U. A1 - Metzger, T. H. T1 - Depth resolved investigations of the relaxation behaviour in strained GaInAs/GaAs superlattices using grazing incidence X-ray diffraction / Rose, D. ; Pietsch, U. ; Förster, A. ; Metzger, T. H. JF - Nuclear instruments and methods in physics research / Section B, Beam interactions with materials and atoms. 97 (1995), H. 1-4 Y1 - 1995 SN - 0168-583X SP - 333 EP - 336 ER - TY - JOUR A1 - Förster, Arnold A1 - Tillmann, K. A1 - Thust, M. T1 - Determination of segregation, elastic strain and thin-foil relaxation in InxGa-1-x As islands on GaAs(001) by high resolution transmission electron microscopy / K. Tillmann ; A. Thust ; M. Lentzen ... A. Förster ... JF - Philosophical magazine / Letters. 74 (1996), H. 5 Y1 - 1996 SN - 1362-3036 SP - 309 EP - 315 ER - TY - JOUR A1 - Förster, Arnold A1 - Lüth, Hans A1 - Schäpers, Thomas T1 - Die neue Welt JF - Spektrum der Wissenschaft (1999) Y1 - 1999 SN - 0170-2971 SP - 90 EP - 93 ER - TY - JOUR A1 - Förster, Arnold A1 - Hauke, M. A1 - Jakumeit, J. A1 - Krafft, B. T1 - DX Centers in Al0.3Ga0.7As/GaAs Analyzed by Point Contact Measurements. Hauke, M.; Jakumeit, J.; Krafft, B.; Nimtz, G.; Förster, A.; Lüth, H. JF - Journal of Applied Physics. 84 (1998), H. 4 Y1 - 1998 SN - 1089-7550 SP - 2034 EP - 2039 ER - TY - JOUR A1 - Förster, Arnold A1 - Leuther, A. A1 - Lüth, H. T1 - DX centres, conduction band offsets and Si-dopant segregation in heterostructures / A. Leuther ; A. Förster ; H. Lüth ... JF - Semiconductor science and technology. 11 (1996), H. 5 Y1 - 1996 SN - 1361-6641 SP - 766 EP - 771 ER - TY - JOUR A1 - Förster, Arnold A1 - Schäpers, T. A1 - Krüger, M. A1 - Appenzeller, J. T1 - Effect of electron-electron interaction on hot ballistic electron beams / Th. Schäpers ; M. Krüger ; J. Appenzeller ; A. Förster ... JF - Applied physics letters. 66 (1995), H. 26 Y1 - 1995 SN - 0003-6951 N1 - ISSN der E-Ausg.: 1077-3118 SP - 3603 EP - 3606 ER - TY - JOUR A1 - Förster, Arnold A1 - Lange, J. A1 - Gerthsen, D. T1 - Effect of interface roughness and scattering on the performance of AlAs/InGaAs resonant tunneling diodes JF - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11 (1993), H. 4 Y1 - 1993 SN - 1071-1023 N1 - ISSN der E-Ausg.: 0734-211X SP - 1743 EP - 1747 ER - TY - JOUR A1 - Förster, Arnold A1 - Kordos, P. A1 - Betko, J. T1 - Electrical and structural characterization of MBE GaAs grown at temperatures between 200 and 600 °C / P. Kordos ; J. Betko; A. Förster ... JF - Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141) Y1 - 1995 SN - 0-7503-0226-7 N1 - International Symposium on Compound Semiconductors <21, 1994, San Diego, Calif.> ; Institute of Physics SP - 295 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Betko, J. A1 - Kordos, P. A1 - Kuklovsky, S. T1 - Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature / J. Betko ; P. Kordos ; S. Kuklovsky ; A. Förster ... JF - Materials science and engineering B: Solid– state materials for advanced technology. 28 (1994), H. 1-3 Y1 - 1994 SN - 0921-5107 SP - 147 EP - 150 ER - TY - JOUR A1 - Förster, Arnold A1 - Appenzeller, J. A1 - Schroer, C. T1 - Electron interference in a T-shaped quantum transistor based on Schottky-gate technology / J. Appenzeller ; Ch. Schroer ; Th. Schäpers ... A. Förster ... JF - Physical review / B, Condensed matter and materials physics. 53 (1996), H. 15 Y1 - 1996 SN - 1095-3795 SP - 9959 EP - 9963 ER - TY - JOUR A1 - Förster, Arnold A1 - Müller, F. A1 - Lengeler, B. A1 - Schäpers, T. T1 - Electron-electron interaction in ballistic electron beams / F. Müller ; B. Lengeler ; Th. Schäpers ... A. Förster... JF - Physical Review B . 51 (1995), H. 8 Y1 - 1995 SN - 0163-1829 N1 - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795 SP - 5099 EP - 5105 ER - TY - JOUR A1 - Förster, Arnold A1 - Lauter, J. A1 - Bauser, E. T1 - Epitaxial gallium arsenide for nuclear radiation detector applications / J. Lauter ; E. Bauser ; A. Förster ... JF - Nuclear physics B / Proceedings supplements. 44 (1995), H. 1-3 Y1 - 1995 SN - 0920-5632 SP - 381 EP - 385 ER - TY - JOUR A1 - Förster, Arnold A1 - Rizzi, Angela A1 - Lüth, H. T1 - Epitaxial growth and characterization of Si/NiSi2/Si(111) heterostructures / Angela Rizzi ; A. Förster ; H. Lüth JF - Surface Science. 211 - 212 (1989) Y1 - 1989 SN - 0039-6028 N1 - ISSN der E-Ausg.: 0039-6028 SP - 620 EP - 629 ER - TY - JOUR A1 - Förster, Arnold A1 - Layet, J. M. A1 - Lüth, H. T1 - Evaluation of dopant profiles and diffusion constants by means of electron energy loss spectroscopy JF - Applied Surface Science. 41 - 42 (1989) Y1 - 1989 SN - 0169-4332 N1 - ISSN der E-Ausg.: 0169-4332 SP - 306 EP - 311 ER - TY - JOUR A1 - Förster, Arnold A1 - Adam, R. A1 - Mikulics, M. A1 - Schelten, J. T1 - Fabrication and subpicosecond optical response of low-temperature-grown GaAs freestanding photoconductive devices. Adam, R.; Mikulics, M.; Forster, A.; Schelten, J.; Siegel, M.; Kordos, P.; Zheng, X.; Wu, S.; Sobolewski, R. JF - Applied Physics Letters. 81 (2002), H. 18 Y1 - 2002 SN - 1077-3118 SP - 3485 EP - 3487 ER - TY - JOUR A1 - Förster, Arnold A1 - Kicin, S A1 - Cambel, V. A1 - Kuliffayova, M. T1 - Fabrication of GaAs symmetric pyramidal mesas prepared by wet-chemical etching using AlAs interlayer. Kicin, S.; Cambel, V.; Kuliffayova, M.; Gregusova, D.; Kovacova, E.; Novak, J.; Kostic, I.; Forster, A. JF - Journal of Applied Physics. 91 (2002), H. 2 Y1 - 2002 SN - 1089-7550 SP - 878 EP - 880 ER - TY - JOUR A1 - Vitusevich, S. A. A1 - Förster, Arnold A1 - Reetz, W. A1 - Lüth, H. A1 - Belyaev, A. E. A1 - Danylyuk, S. V. T1 - Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode JF - Nanotechnology. 11 (2000), H. 4 Y1 - 2000 SN - 1361-6528 SP - 305 EP - 308 ER - TY - JOUR A1 - Schöning, Michael Josef A1 - Biselli, Manfred A1 - Selmer, Thorsten A1 - Öhlschläger, Peter A1 - Baumann, Marcus A1 - Förster, Arnold A1 - Poghossian, Arshak T1 - Forschung „zwischen“ den Disziplinen: das Institut für Nano- und Biotechnologien JF - Analytik news : das Online-Labormagazin für Labor und Analytik N2 - "Biologie trifft Mikroelektronik", das Motto des Instituts für Nano- und Biotechnologien (INB) an der FH Aachen, unterstreicht die zunehmende Bedeutung interdisziplinär geprägter Forschungsaktivitäten. Der thematische Zusammenschluss grundständiger Disziplinen, wie die Physik, Elektrotechnik, Chemie, Biologie sowie die Materialwissenschaften, lässt neue Forschungsgebiete entstehen, ein herausragendes Beispiel hierfür ist die Nanotechnologie: Hier werden neue Werkstoffe und Materialien entwickelt, einzelne Nanopartikel oder Moleküle und deren Wechselwirkung untersucht oder Schichtstrukturen im Nanometerbereich aufgebaut, die neue und vorher nicht bekannte Eigenschaften hervorbringen. Vor diesem Hintergrund bündelt das im Jahre 2006 gegründete INB die an der FH Aachen vorhandenen Kompetenzen von derzeit insgesamt sieben Laboratorien auf den Gebieten der Halbleitertechnik und Nanoelektronik, Nanostrukturen und DNA-Sensorik, der Chemo- und Biosensorik, der Enzymtechnologie, der Mikrobiologie und Pflanzenbiotechnologie, der Zellkulturtechnik, sowie der Roten Biotechnologie synergetisch. In der Nano- und Biotechnologie steckt außergewöhnliches Potenzial! Nicht zuletzt deshalb stellen sich die Forscher der Herausforderung, in diesem Bereich gemeinsam zu forschen und Schnittstellen zu nutzen, um so bei der Gestaltung neuartiger Ideen und Produkte mitzuwirken, die zukünftig unser alltägliches Leben verändern werden. Im Folgenden werden die verschiedenen Forschungsbereiche kurz zusammenfassend vorgestellt und vorhandene Interaktionen anhand von exemplarisch ausgewählten, aktuellen Forschungsprojekten skizziert. Y1 - 2012 VL - Publ. online PB - Dr. Beyer Internet-Beratung CY - Ober-Ramstadt ER - TY - JOUR A1 - Förster, Arnold A1 - Kohleick, R. A1 - Lüth, H. T1 - Ga segregation and the effect of Si and Ge interlayers at the GaAs(100)/AlAs heterostructure / R. Kohleick ; A. Förster ; H. Lüth JF - Physical Review B . 48 (1993), H. 20 Y1 - 1993 SN - 0163-1829 N1 - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795 SP - 15138 EP - 15143 ER - TY - JOUR A1 - Förster, Arnold A1 - Mikulics, M. A1 - Siebe, F. A1 - Fox, A. T1 - Generation of 460 GHz radiation by photomixing in low-temperature-grown MBE GaAs. Mikulics, M.; Siebe, F.; Fox, A.; Marso, M.; Forster, A.; Stuer, H.; Schafer, F.; Gusten, R.; Kordos, P. JF - Conference proceedings : Smolenice Castle, Slovakia, October 14 - 16, 2002 / [organizers: Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by Juraj Breza Y1 - 2002 SN - 0-7803-7276-X N1 - International Conference on Advanced Semiconductor Devices and Microsystems ; (4, 2002, Smolenice). ASDAM '02 ; (4 : ; 2002.10.14-16 : ; Smolenice) SP - 129 EP - 132 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - JOUR A1 - Mikulics, M. A1 - Camara, I. A1 - Hardt, A. van der A1 - Fox, A. A1 - Förster, Arnold A1 - Gusten, R. A1 - Lüth, H. A1 - Kordos, P. T1 - Generation of THz radiation by photomixing in low-temperature-grown MBE GaAs JF - Fifth International Conference on Advanced Semiconductor Devices and Microsystems : conference proceedings ; Smolenice Castle, Slovakia, October 17 - 21, 2004 / [organizers: Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by J. Osvald Y1 - 2004 SN - 0-7803-8335-7 N1 - International Conference on Advanced Semiconductor Devices and Microsystems <5, 2004, Smolenice> ; ASDAM <5, 2004, Smolenice> ; IEEE catalog numer: 04EX867 SP - 231 EP - 234 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Lentzen, M. A1 - Gerthsen, D. T1 - Growth mode and strain relaxation during the initial stage of InxGa1–xAs growth on GaAs(001) / M. Lentzen ; D. Gerthsen ; A. Förster ... JF - Applied physics letters. 60 (1992), H. 1 Y1 - 1992 SN - 0003-6951 N1 - ISSN der E-Ausg.: 1077-3118 SP - 74 EP - 76 ER - TY - JOUR A1 - Förster, Arnold A1 - Tillmann, K. A1 - Gerthsen, D. T1 - Growth morphology and misfit relaxation of MBE-grown In0.6 G0.4 As on GaAs(001) / K. Tillmann ; D. Gerthsen ; A. Förster ... JF - Thin solid films. 261 (1995), H. 1-2 Y1 - 1995 SN - 0040-6090 SP - 139 EP - 147 ER - TY - JOUR A1 - Förster, Arnold A1 - Klemradt, U. A1 - Funke, M. A1 - Fromm, M T1 - Growth-induced interface roughness of GaAs/AlAs-layers studied by X-ray scattering under grazing angles / U. Klemradt ; M. Funke ; M. Fromm ... A Förster JF - Physica B: condensed matter. 221 (1996), H. 1-4 Y1 - 1996 SN - 0921-4526 SP - 27 EP - 33 ER - TY - JOUR A1 - Förster, Arnold A1 - Betko, J. A1 - Morvic, M. A1 - Novak, J. T1 - Hall mobility analysis in low-temperature-grown molecular-beam epitaxial GaAs / J. Betko , M. Morvic ; J. Novák ... A. Förster ... JF - Applied physics letters. 69 (1996), H. 17 Y1 - 1996 SN - 0003-6951 N1 - ISSN der E-Ausg.: 1077-3118 SP - 2563 EP - 2565 ER - TY - JOUR A1 - Förster, Arnold A1 - Ohler, C. A1 - Daniels, C. T1 - Heterojunction band offsets and Schottky-barrier heights: Tersoff’s theory in the presence of strain / C. Ohler ; C. Daniels ; A. Förster ... JF - Physical review / B, Condensed matter and materials physics. 58 (1998), H. 12 Y1 - 1998 SN - 1095-3795 SP - 7864 EP - 7871 ER - TY - JOUR A1 - Förster, Arnold A1 - Montanari, Simone A1 - Lepsa, Mihail Ion A1 - Lüth, Hans T1 - High frequency investigation of graded gap injectors for GaAs Gunn diodes / Simone Montanari ; Arnold Förster ; Mihail Ion Lepsa ; Hans Lüth JF - Solid-state electronics. 49 (2005), H. 2 Y1 - 2005 SN - 0038-1101 SP - 245 EP - 250 ER - TY - JOUR A1 - Förster, Arnold A1 - Brugger, H. A1 - Meiners, U. T1 - High quality GaAs-based resonant tunneling diodes for high frequency device applications / H. Brugger ; U. Meiners ; C. Wölk ... A. Förster ... JF - Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman Y1 - 1991 SN - 0-7803-0491-8 N1 - Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits <1991, Ithaca, NY> SP - 39 EP - ff. PB - Inst. of Electrical and Electronics Engineers CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Hu, Quing A1 - Verghese, S. T1 - High-frequency (f ~ 1 THz) studies of quantum-effect devices / Qing Hu ; S. Verghese ; R. A. Wyss ... A. Förster JF - Semiconductor science and technology. 11 (1996), H. 12 Y1 - 1996 SN - 1361-6641 SP - 1888 EP - 1894 ER - TY - JOUR A1 - Förster, Arnold A1 - Malindretos, Jörg A1 - Indlekofer, Klaus Michael A1 - Lepsa, Mihail Ion T1 - Homogeneity analysis of ion-implanted resonant tunnelling diodes for applications in digital logic circuits. Malindretos, Jörg; Förster, Arno; Indlekofer, Klaus Michael; Lepsa, Mihail Ion; Hardtdegen, Hilde; Schmidt, Roland; Luth, Hans JF - Superlattices and Microstructures. 31 (2002), H. 6 Y1 - 2002 SN - 0749-6036 SP - 315 EP - 325 ER - TY - JOUR A1 - Hoskens, R.C.P. A1 - Roer, T.G. van de A1 - Tolstikhin, V.I. A1 - Förster, Arnold T1 - Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation JF - LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2 Y1 - 2000 SN - 0-7803-5947-X N1 - 2000 IEEE LEOS annual meeting SP - 444 EP - 445 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Lepsa, M. I. A1 - Freundt, D. T1 - Hot electron injector Gunn diode for advanced driver assistance systems JF - Applied physics A: materials science and processing. 87 (2007), H. 3 Y1 - 2007 SN - 0947-8396 N1 - ISSN der E-Ausg.: 1432-0630 ; Special issue SP - 545 EP - 558 ER - TY - JOUR A1 - Förster, Arnold A1 - Döhler, G. H A1 - Heber, J. T1 - Hot electrons in n-i-p.i-based devices / G. H. Döhler ; J. Heber ... A. Förster ... JF - Hot electrons in semiconductors : physics and devices / ed. by N. Balkan. - (Series on semiconductor science and technology ; 5) Y1 - 1998 SN - 0-19-850058-0 SP - 478 EP - 504 PB - Clarendon Press CY - Oxford ER - TY - JOUR A1 - Förster, Arnold A1 - Lachenmann, S. G. A1 - Kastalsky, A. A1 - Uhlisch, D. T1 - Hybrid superconductor/semiconductor step junction with three terminals. Lachenmann, S. G.; Kastalsky, A.; Förster A.; Uhlisch, D.; Neurohr, K.; Schäpers, Th. JF - Journal of Applied Physics. 83 (1998), H. 12 Y1 - 1998 SN - 1089-7550 SP - 8077 EP - 8079 ER - TY - JOUR A1 - Förster, Arnold A1 - Brugger, H. A1 - Meiners, U. A1 - Diniz, R. T1 - Hydrostatic pressure sensors based on solid state tunneling devices / H. Brugger; U. Meiners ; R. Diniz ... A. Förster ... JF - Solid state electronics. 37 (1994), H. 4-6 Y1 - 1994 SN - 0038-1101 SP - 801 EP - 804 ER - TY - JOUR A1 - Förster, Arnold A1 - Schmidt, T. A1 - Haug, R. J. T1 - Imaging the local density of states in a disordered semiconductor / T. Schmidt ; R. J. Haug ; V. I. Fal'ko ... A. Förster ... JF - 23rd International Conference on the Physics of Semiconductors : Berlin, Germany, July 21 - 26, 1996 / ed.: Matthias Scheffler ... - Vol. 3 Y1 - 1996 SN - 981-02-2947-X N1 - International Conference on the Physics of Semiconductors <23, 1996, Berlin> SP - 2251 EP - ff. PB - World Scientific CY - Singapore [u.a.] ER - TY - JOUR A1 - Sabitova, A. A1 - Ebert, Ph. A1 - Lenz, A. A1 - Schaafhausen, S. A1 - Ivanova, L. A1 - Dähne, M. A1 - Hoffmann, A. A1 - Dunin-Borkowski, R. E. A1 - Förster, Arnold A1 - Grandidier, B. A1 - Eisele, H. T1 - Intrinsic bandgap of cleaved ZnO(112¯0) surfaces JF - Applied physics letters Y1 - 2013 SN - 1077-3118 (E-Journal); 0003-6951 (Print) VL - Vol. 102 SP - 021608 ER - TY - JOUR A1 - Förster, Arnold A1 - Vitusevich, S. A. A1 - Belyaev, B. A. T1 - Intrinsic bistability effect in delta doped tunneling diodes / S. A. Vitusevich ; A. Förster ; B. A. Belyaev ... JF - Proceedings of the XXVIII International School on Physics of Semiconducting Compounds : Jaszowiec, Poland, June 6 - 11, 1999 / Polish Academy of Sciences, Institute of Physics. Ed. of the proceedings Wojciech Szuszkiewicz Y1 - 1999 N1 - International School on Physics of Semiconducting Compounds <28, 1999, Jaszowiec> ; Acta physica Polonica : A ; 96, no. 5 CY - Warsaw ER - TY - JOUR A1 - Förster, Arnold A1 - Dubecky, F.. A1 - Darmo, J. T1 - Investigation of deep-level states in bulk and low temperature MBE semiinsulating GaAs by admittance transient spectroscopy / F. Dubecky ; J. Darmo ; M. Darviras ; A. Förster ... JF - Semi-insulating III-V materials, Ixtapa, Mexico 1992 : proceedings of the 7th Conference on Semi-insulating III-V Materials, Ixtapa, Mexico, 21 - 24 April 1992 / ed. by C. J. Miner ... Y1 - 1994 SN - 0-7503-0242-9 N1 - Conference on Semi-Insulating III-V Materials <7, 1992, Ixtapa> SP - 265 EP - 272 PB - Inst. of Physics Publ. CY - Bristol [u.a.] ER -