TY  - JOUR
A1  - Förster, Arnold
A1  - Lentzen, M.
A1  - Gerthsen, D.
T1  - Growth mode and strain relaxation during the initial stage of InxGa1–xAs growth on GaAs(001) / M. Lentzen ; D. Gerthsen ; A. Förster ...
JF  - Applied physics letters. 60 (1992), H. 1
Y1  - 1992
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 74
EP  - 76
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Tillmann, K.
A1  - Gerthsen, D.
T1  - Growth morphology and misfit relaxation of MBE-grown In0.6 G0.4 As on GaAs(001) / K. Tillmann ; D. Gerthsen ; A. Förster ...
JF  - Thin solid films. 261 (1995), H. 1-2
Y1  - 1995
SN  - 0040-6090
SP  - 139
EP  - 147
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Klemradt, U.
A1  - Funke, M.
A1  - Fromm, M
T1  - Growth-induced interface roughness of GaAs/AlAs-layers studied by X-ray scattering under grazing angles / U. Klemradt ; M. Funke ; M. Fromm ... A Förster
JF  - Physica B: condensed matter. 221 (1996), H. 1-4
Y1  - 1996
SN  - 0921-4526
SP  - 27
EP  - 33
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Betko, J.
A1  - Morvic, M.
A1  - Novak, J.
T1  - Hall mobility analysis in low-temperature-grown molecular-beam epitaxial GaAs / J. Betko , M. Morvic ; J. Novák ... A. Förster ...
JF  - Applied physics letters. 69 (1996), H. 17
Y1  - 1996
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 2563
EP  - 2565
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Ohler, C.
A1  - Daniels, C.
T1  - Heterojunction band offsets and Schottky-barrier heights: Tersoff’s theory in the presence of strain / C. Ohler ; C. Daniels ; A. Förster ...
JF  - Physical review / B, Condensed matter and materials physics. 58 (1998), H. 12
Y1  - 1998
SN  - 1095-3795
SP  - 7864
EP  - 7871
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Montanari, Simone
A1  - Lepsa, Mihail Ion
A1  - Lüth, Hans
T1  - High frequency investigation of graded gap injectors for GaAs Gunn diodes / Simone Montanari ; Arnold Förster ; Mihail Ion Lepsa ; Hans Lüth
JF  - Solid-state electronics. 49 (2005), H. 2
Y1  - 2005
SN  - 0038-1101
SP  - 245
EP  - 250
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Brugger, H.
A1  - Meiners, U.
T1  - High quality GaAs-based resonant tunneling diodes for high frequency device applications / H. Brugger ; U. Meiners ; C. Wölk ... A. Förster ...
JF  - Proceedings : August 5 - 7, 1991, Cornell University, Ithaca, New York / R. J. Trew, General Chairman
Y1  - 1991
SN  - 0-7803-0491-8
N1  - Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits <1991, Ithaca, NY>
SP  - 39
EP  - ff.
PB  - Inst. of Electrical and Electronics Engineers
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Hu, Quing
A1  - Verghese, S.
T1  - High-frequency (f ~ 1 THz) studies of quantum-effect devices / Qing Hu ; S. Verghese ; R. A. Wyss ... A. Förster
JF  - Semiconductor science and technology. 11 (1996), H. 12
Y1  - 1996
SN  - 1361-6641
SP  - 1888
EP  - 1894
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Malindretos, Jörg
A1  - Indlekofer, Klaus Michael
A1  - Lepsa, Mihail Ion
T1  - Homogeneity analysis of ion-implanted resonant tunnelling diodes for applications in digital logic circuits. Malindretos, Jörg; Förster, Arno; Indlekofer, Klaus Michael; Lepsa, Mihail Ion; Hardtdegen, Hilde; Schmidt, Roland; Luth, Hans
JF  - Superlattices and Microstructures. 31 (2002), H. 6
Y1  - 2002
SN  - 0749-6036
SP  - 315
EP  - 325
ER  - 
TY  - JOUR
A1  - Hoskens, R.C.P.
A1  - Roer, T.G. van de
A1  - Tolstikhin, V.I.
A1  - Förster, Arnold
T1  - Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation
JF  - LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2
Y1  - 2000
SN  - 0-7803-5947-X
N1  - 2000 IEEE LEOS annual meeting
SP  - 444
EP  - 445
PB  - IEEE Service Center
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lepsa, M. I.
A1  - Freundt, D.
T1  - Hot electron injector Gunn diode for advanced driver assistance systems
JF  - Applied physics A: materials science and processing. 87 (2007), H. 3
Y1  - 2007
SN  - 0947-8396
N1  - ISSN der E-Ausg.: 1432-0630 ; Special issue
SP  - 545
EP  - 558
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Döhler, G. H
A1  - Heber, J.
T1  - Hot electrons in n-i-p.i-based devices / G. H. Döhler ; J. Heber ... A. Förster ...
JF  - Hot electrons in semiconductors : physics and devices / ed. by N. Balkan. - (Series on semiconductor science and technology ; 5)
Y1  - 1998
SN  - 0-19-850058-0
SP  - 478
EP  - 504
PB  - Clarendon Press
CY  - Oxford
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lachenmann, S. G.
A1  - Kastalsky, A.
A1  - Uhlisch, D.
T1  - Hybrid superconductor/semiconductor step junction with three terminals. Lachenmann, S. G.; Kastalsky, A.; Förster A.; Uhlisch, D.; Neurohr, K.; Schäpers, Th.
JF  - Journal of Applied Physics. 83 (1998), H. 12
Y1  - 1998
SN  - 1089-7550
SP  - 8077
EP  - 8079
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Brugger, H.
A1  - Meiners, U.
A1  - Diniz, R.
T1  - Hydrostatic pressure sensors based on solid state tunneling devices / H. Brugger; U. Meiners ; R. Diniz ... A. Förster ...
JF  - Solid state electronics. 37 (1994), H. 4-6
Y1  - 1994
SN  - 0038-1101
SP  - 801
EP  - 804
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schmidt, T.
A1  - Haug, R. J.
T1  - Imaging the local density of states in a disordered semiconductor / T. Schmidt ; R. J. Haug ; V. I. Fal'ko ... A. Förster ...
JF  - 23rd International Conference on the Physics of Semiconductors : Berlin, Germany, July 21 - 26, 1996 / ed.: Matthias Scheffler ... - Vol. 3
Y1  - 1996
SN  - 981-02-2947-X
N1  - International Conference on the Physics of Semiconductors <23, 1996, Berlin>
SP  - 2251
EP  - ff.
PB  - World Scientific
CY  - Singapore [u.a.]
ER  - 
TY  - JOUR
A1  - Sabitova, A.
A1  - Ebert, Ph.
A1  - Lenz, A.
A1  - Schaafhausen, S.
A1  - Ivanova, L.
A1  - Dähne, M.
A1  - Hoffmann, A.
A1  - Dunin-Borkowski, R. E.
A1  - Förster, Arnold
A1  - Grandidier, B.
A1  - Eisele, H.
T1  - Intrinsic bandgap of cleaved ZnO(112¯0) surfaces
JF  - Applied physics letters
Y1  - 2013
SN  - 1077-3118 (E-Journal); 0003-6951 (Print)
VL  - Vol. 102
SP  - 021608
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Vitusevich, S. A.
A1  - Belyaev, B. A.
T1  - Intrinsic bistability effect in delta doped tunneling diodes /  S. A. Vitusevich ; A. Förster ; B. A.  Belyaev ...
JF  - Proceedings of the XXVIII International School on Physics of Semiconducting Compounds : Jaszowiec, Poland, June 6 - 11, 1999 / Polish Academy of Sciences, Institute of Physics. Ed. of the proceedings Wojciech Szuszkiewicz
Y1  - 1999
N1  - International School on Physics of Semiconducting Compounds <28, 1999, Jaszowiec> ; Acta physica Polonica : A ; 96, no. 5
CY  - Warsaw
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Dubecky, F..
A1  - Darmo, J.
T1  - Investigation of deep-level states in bulk and low temperature MBE semiinsulating GaAs by admittance transient spectroscopy /  F. Dubecky ; J. Darmo ; M. Darviras ; A. Förster ...
JF  - Semi-insulating III-V materials, Ixtapa, Mexico 1992 : proceedings of the 7th Conference on Semi-insulating III-V Materials, Ixtapa, Mexico, 21 - 24 April 1992 / ed. by C. J. Miner ...
Y1  - 1994
SN  - 0-7503-0242-9
N1  - Conference on Semi-Insulating III-V Materials <7, 1992, Ixtapa>
SP  - 265
EP  - 272
PB  - Inst. of Physics Publ.
CY  - Bristol [u.a.]
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lüth, H.
T1  - Investigation of the InSb(110)-Sn schottky barrier by means of electron energy loss spectroscopy
JF  - Surface Science. 189-190 (1987)
Y1  - 1987
SN  - 0039-6028
N1  - ISSN der E-Ausg.: 0039-6028
SP  - 307
EP  - 314
ER  - 
TY  - JOUR
A1  - Förster, Arnold
T1  - Layer Deposition I
JF  - Fundamentals of nanoelectronics / Stefan Blügel ... (ed.). - (Lecture manuscripts of the ... Spring School of the Department of Solid State Research ; 34). - (Schriften des Forschungszentrums Jülich : Materie und Material ; 14 ; 34)
Y1  - 2003
SN  - 3-89336-319-X
SP  - C2.1
EP  - C2.13
PB  - Forschungszentrum, Zentralbibliothek
CY  - Jülich
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Janssen, G.
A1  - Roer, T. G. van de
T1  - Logic Circuits with reduced complexity based on devices with higher functionality / G. Janssen ; T. G. van de Roer ; W. Prost ... A. Förster
JF  - Proceedings / STW/SAFE 2nd Annual Workshop on Semiconductor Advances for Future Electronics, Safe '99 - ProRISC/IEEE 10th Annual Workshop on Circuits, Systems and Signal Processing, ProRISC 99 : November 24 - 26, 1999, Mierlo, The Netherlands [Elektronische Ressource]
Y1  - 1999
N1  - SAFE <2, 1999, Mierlo> ; Workshop on Circuits, Systems and Signal Processing <10, 1999, Mierlo> ; Stichting voor de Technische Wetenschappen
SP  - 219
PB  - Technology Foundation, STW
CY  - Utrecht
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Mikulics, M.
A1  - Marso, M.
A1  - Adam, R.
T1  - Low-temperature-grown MBE GaAs for terahertz photomixers. Mikulics, M.; Marso, M.; Adam, R.; Fox, A.; Buca, D.; Förster, A.; Kordos, P.; Xu, Y.; Sobolewski, R.
JF  - 2001 Symposium on Electron Devices for Microwave and Optoelectronic Applications ; [Vienna University of Technology, Institute of Electrical Measurements and Circuit Design, 15 - 16 November 2001, Vienna, Austria ; proceedings] / EDMO 2001. Organised by: Institute of Electrical Measurements and Circuit Design, Vienna University of Technology, Austria. With technical co-sponsorship from IEEE Electron Devices Society
Y1  - 2001
SN  - 078037049X
N1  - IEEE catalog number: 01TH8567
SP  - 155
EP  - 155
PB  - IEEE Operations Center
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Betko, J.
A1  - Morvic, M.
A1  - Novak, J.
T1  - Magnetoresistance in low-temperature grown molecular-beam epitaxial GaAs. Betko, J.; Morvic, M.; Novak, J.; Förster, A.; Kordos, P.
JF  - Journal of Applied Physics. 86 (1999), H. 11
Y1  - 1999
SN  - 1089-7550
SP  - 6243
EP  - 6248
ER  - 
TY  - JOUR
A1  - Schmidt, R.
A1  - Tonnesmann, A.
A1  - Förster, Arnold
A1  - Grimm, M.
A1  - Kordos, P.
A1  - Lüth, H.
T1  - Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates using an InP buffer layer
JF  - 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO 2000 ; [13 - 14 November 2000, University of Glasgow] / organised by Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow Scotland. MTT/ED/AP/LEO Societies Joint Chapter, United Kingdom and Republic of Ireland Section. With technical co-sponsorship from IEEE Electron Device Society
Y1  - 2000
SN  - 0-7803-6550-X
N1  - EDMO <8, 2000, Glasgow> ; University <Glasgow> / Department of Electronics and Electrical Engineering ; IEEE catalog number 00TH8534
SP  - 95
EP  - 98
PB  - IEEE Operations Center
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Dieker, C.
A1  - Gerthsen, D.
T1  - Microstructure of the AlAs/GaAs and AlAs/InGaAs resonant tunneling diodes and its correlation with the electrical properties / C. Dieker ; D. Gerthsen ; A. Förster ...
JF  - Microscopy of semiconducting materials 1993 : proceedings of the Royal Microscopical Society Conference held at Oxford University, 5 - 8 April 1993 / ed. by A. G. Cullis ... - (Conference series / Institute of Physics ; 134)
Y1  - 1993
SN  - 0-7503-0290-9
N1  - Royal Microscopical Society Conference on Microscopy of Semiconducting Materials <8, 1993, Oxford> ; MSM <8, 1993, Oxford>
SP  - 253
EP  - ff.
PB  - Institute of Physics
CY  - Bristol [u.a.]
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Zamdmer, N.
A1  - Hu, Qing
A1  - Verghese, S.
T1  - Mode-Discriminating Photoconductor and Coplanar Wave-Guide Circuits for Picosecond Sampling. Zamdmer, N.; Hu, Qing ; Verghese, S. ; Förster, A.
JF  - Applied Physics Letters. 74 (1999), H. 7
Y1  - 1999
SN  - 1077-3118
SP  - 1039
EP  - 1041
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Zettler, J.-T.
A1  - Mikkelsen, H.
A1  - Leo, K.
T1  - Modulated ellipsometric measurements and transfer-matrix calculation of the field-dependent dielectric function of a multiple quantum well / J.-Th. Zettler ; H. Mikkelsen ; K. Leo ... A. Förster
JF  - Physical Review B . 46 (1992), H. 24
Y1  - 1992
SN  - 0163-1829
N1  - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795
SP  - 15955
EP  - 15962
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Tillmann, K.
A1  - Gerthsen, D.
T1  - Morphological transformations of MBE-grown In0.6Ga0.4As island on GaAs(001) substrates / K. Tillmann ; D. Gerthsen ; P. Pfundstein ; A. Förster ...
JF  - Microscopy of semiconducting materials 1995 : proceedings of the Institute of Physics Conference held at Oxford University, 20 - 23 March 1995 / Ed. by A G Cullis ... - (Conference series / Institute of Physics ; 146)
Y1  - 1995
SN  - 0-7503-0347-6
N1  - MSM <9, 1995, Oxford> ; Institut of Physics <London>
SP  - 195
EP  - ff.
PB  - Institute of Physics
CY  - Bristol [u.a.]
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kiesslich, G.
A1  - Wacker, A.
A1  - Scholl, E.
T1  - Nonlinear charging effect of quantum dots in a p-i-n diode. Kiesslich, G.; Wacker, A.; Scholl, E.; Vitusevich, S.A.; Belyaev, A.E.; Danylyuk, S.V.; Forster, A.; Klein, N.; Henini, M.
JF  - Physical Review B. 68 (2003)
Y1  - 2003
SN  - 1550-235X
N1  - 125331 (6 Seiten)
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lachenmann, S. G.
A1  - Kastalsky, A.
T1  - Novel hybrid Nb/InAs/Nb step junctions / S. G. Lachenmann ; A. Kastalsky ; I. Friedrich ; A. Förster ...
JF  - Czechoslovak journal of physics . 46 (1996), H. S2
Y1  - 1996
SN  - 0011-4626
SP  - 659
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schmidt, T.
A1  - Haug, R. J.
T1  - Observation of the local structure of landau bands in a disordered conductor / T. Schmidt ; R. J. Haug ; Vladimir I. Fal'ko ... A. Förster ...
JF  - Physical review letters. 78 (1997), H. 8
Y1  - 1997
SN  - 0031-9007
N1  - ISSN der E-Ausg.: 1079-7114
SP  - 1540
EP  - 1543
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Morvic, M.
A1  - Betko, J.
T1  - On the hopping and band conductivity in molecular-beam epitaxial low-temperature grown GaAs / M. Morvic ; J. Betko ; J. Novák ... A. Förster
JF  - Physica status solidi / B, Basic research. 205 (1998), H. 1
Y1  - 1998
SN  - 1521-3951
SP  - 125
EP  - 128
ER  - 
TY  - JOUR
A1  - Zatko, B.
A1  - Dubecký, F.
A1  - Bohacek, P.
A1  - Gombia, E.
A1  - Frigeri, P.
A1  - Mosca, R.
A1  - Franchi, S.
A1  - Huarn, J.
A1  - Nescas, V.
A1  - Sekacova, M.
A1  - Förster, Arnold
A1  - Kordos, P.
T1  - On the spectrometric performance limit of radiation detectors based on semi-insulating GaAs
JF  - Nuclear instruments and methods in physics research, Section A. 531 (2004), H. 1-2
Y1  - 2004
SN  - 0168-9002
SP  - 111
EP  - 120
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Zamdmer, N.
A1  - Hu, Qing
A1  - McIntosh, K. A.
T1  - On-chip frequency domain submillimeter-wave transceiver. Zamdmer, N.; Hu, Qing ;  McIntosh K. A. ; Verghise, S. ; Förster, A.
JF  - Applied Physics Letters. 75 (1999), H. 24
Y1  - 1999
SN  - 1077-3118
SP  - 3877
EP  - 3879
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schönhut, J.
A1  - Metzner, C.
T1  - Optical investigation of impurity bands in a delta-doped n-layer / J. Schönhut ; C. Metzner ; S. Müller ... A. Förster ...
JF  - Solid state electronics. 40 (1996), H. 1-8
Y1  - 1996
SN  - 0038-1101
SP  - 701
EP  - 705
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Vitusevich, S. A.
A1  - Belyaev, A. E.
T1  - Optically controlled 2D tunneling in GaAs delta-doped p-n junction / S. A. Vitusevich ; A. Förster ; A. E. Belyaev ...
JF  - Semiconductor  Physics,  Quantum  Electronics  &  Optoelectronics (SQO) : International Scientific Journal. 2 (1999), H. 1
Y1  - 1999
SN  - 1605-6582
SP  - 7
EP  - 10
ER  - 
TY  - JOUR
A1  - Ungermanns, C.
A1  - Ahe, M. v. d.
A1  - Carius, Reinhard
A1  - Förster, Arnold
T1  - Optimization of III/V binary growth with RHEED in MOMBE / C. Ungermanns ; M. v. d. Ahe ; R. Carius ; A. Förster ...
JF  - Fresenius' Journal of Analytical Chemistry. 358 (1997), H. 1-2
Y1  - 1997
SN  - 0937-0633
N1  - ISSN der E-Ausg.: 1432-1130
SP  - 101
EP  - 104
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schmidt, T.
A1  - Tewordt, M.
A1  - Haug, R. J.
T1  - Peak-to-valley ratio of small resonant-tunneling diodes with various barrier-thickness asymmetries / T. Schmidt ; M. Tewordt ; R. J. Haug ... A. Förster ...
JF  - Applied physics letters. 68 (1996), H. 6
Y1  - 1996
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 838
EP  - 840
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Stock, J.
A1  - Indlekofer, K. M.
T1  - Perspectives of resonant tunneling diodes
JF  - Recent research developments in materials science & engineering/ 1,2
Y1  - 2002
SN  - 81-7895-057-X
N1  - Nebent.: Materials science & engineering
SP  - 527
EP  - 556
PB  - Transworld Research Network
CY  - Trivandrum, India
ER  - 
TY  - JOUR
A1  - Mikulics, M.
A1  - Marso, M.
A1  - Cámara Mayorga, I.
A1  - Gusten, R.
A1  - Stancek, S.
A1  - Michael, E. A.
A1  - Schieder, R.
A1  - Wolter, M.
A1  - Buca, D.
A1  - Förster, Arnold
A1  - Kordos, P.
A1  - Lüth, H.
T1  - Photomixers fabricated on nitrogen-ion-implanted GaAs
JF  - Applied physics letters. 87 (2005)
Y1  - 2005
SP  - 041106-1
EP  - 041106-3
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Belyaev, A. E.
A1  - Vitusevich, S.A.
A1  - Eaves, L.
T1  - Photoresponse spectra in p-i-n diodes containing quantum dots. Belyaev, A.E.; Vitusevich, S.A.; Eaves, L.; Main, P.C.; Henini, M.; Förster, A.; Reetz, W.; Danylyuk, S.V.
JF  - Nanotechnology. 13 (2002), H. 1
Y1  - 2002
SP  - 94
EP  - 96
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Bertuccio, G.
A1  - Pullia, A.
T1  - Pixel X-ray detectors in epitaxial gallium arsenide withhigh-energy resolution capabilities (Fano factor experimentaldetermination) /  G. Bertuccio ; A. Pullia ; J. Lauter ; A. Förster ...
JF  - IEEE transactions on nuclear science. 44 (1997), H. 1
Y1  - 1997
SN  - 0018-9499
SP  - 1
EP  - 5
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Cambel, V.
A1  - Kicin, S.
A1  - Kuliffayová, M.
T1  - Preparation of patterned GaAs structures for MEMS and MOEMS. Cambel, V.; Kicin, S.; Kuliffayová, M.; Kovácová, E.; Novák, J.; Kostic, I.; Förster, A.
JF  - Materials Science and Engineering: C. 19 (2002), H. 2
Y1  - 2002
SN  - 0928-4931
SP  - 161
EP  - 165
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kordos, P.
A1  - Ruders, F.
T1  - Properties of LT MBE GaAs for photomixing up to THz frequencies / P. Kordos ; F. Ruders ; M. Marso ; A. Förster
JF  - Proceedings : 8 - 11 December 1996, Australian National University, Canberra, Australia / ed.: C. Jagadish
Y1  - 1997
SN  - 0-7803-3374-8
N1  - Conference on Optoelectronic and Microelectronic Materials and Devices <1996, Canberra> ; IEEE catalog number: 96TH8197
SP  - 71
EP  - ff.
PB  - IEEE Service Center
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lachenmann, S. G.
A1  - Kastalsky, A.
T1  - Properties of Nb/InAs/Nb hybrid step junctions / S. G. Lachenmann ; A. Kastalsky ; I. Friedrich ; A. Förster ...
JF  - Journal of low temperature physics. 106 (1997), H. 3-4
Y1  - 1997
SN  - 0022-2291
N1  - ISSN der E-Ausg.: 1573-7357
SP  - 321
EP  - 326
ER  - 
TY  - JOUR
A1  - Maezawa, Koichi
A1  - Förster, Arnold
T1  - Quantum transport devices based on resonant tunneling
JF  - Nanoelectronics and information technology : advanced electronic materials and novel devices / Rainer Waser (ed.).
Y1  - 2003
SN  - 3-527-40363-9
SP  - 407
EP  - 424
PB  - Wiley-VCH
CY  - Weinheim
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schmidt, T.
A1  - Tewordt, M.
A1  - Blick, R. H.
T1  - Quantum-dot ground states in a magnetic field studied by single-electron tunneling spectroscopy on double-barrier heterostructures / T. Schmidt ; M. Tewordt ; R. H. Blick ... A. Förster ...
JF  - Physical Review B . 51 (1995), H. 8
Y1  - 1995
SN  - 0163-1829
N1  - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795
SP  - 5570
EP  - 5573
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lohe, C.
A1  - Leuther, A.
T1  - Quasi-two-dimensional plasmons of a single &#948;-doped layer in GaAs studied by high-resolution electron-energy-loss spectroscopy / C. Lohe ; A. Leuther ; A. Förster ...
JF  - Physical Review B . 47 (1993), H. 7
Y1  - 1993
SN  - 0163-1829
N1  - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795
SP  - 3819
EP  - 3826
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schäpers, T.
A1  - Müller, F.
A1  - Lengeler, B.
T1  - Reflection and transmission of ballistic electrons at a potential barrier / Schäpers, T.  ; Müller, F.  ; Förster, A. ; Lengeler, B. ; Lüth, H.
JF  - Superlattices and microstructures . 14 (1993), H. 1
Y1  - 1993
SN  - 0749-6036
SP  - 57
ER  - 
TY  - JOUR
A1  - Vitusevich, S. A.
A1  - Förster, Arnold
A1  - Lüth, H.
A1  - Belyaev, A. E.
A1  - Danylyuk, S. V.
A1  - Konakova, R. V.
A1  - Sheka, D. I.
T1  - Resonant spectroscopy of electric-field-induced superlattices
JF  - Journal of Applied Physics. 90 (2001), H. 6
Y1  - 2001
SN  - 1089-7550
U6  - http://dx.doi.org/10.1063/1.1392956
SP  - 2857
EP  - 2861
ER  -