TY - JOUR A1 - Zatko, B. A1 - Dubecký, F. A1 - Bohacek, P. A1 - Gombia, E. A1 - Frigeri, P. A1 - Mosca, R. A1 - Franchi, S. A1 - Huarn, J. A1 - Nescas, V. A1 - Sekacova, M. A1 - Förster, Arnold A1 - Kordos, P. T1 - On the spectrometric performance limit of radiation detectors based on semi-insulating GaAs JF - Nuclear instruments and methods in physics research, Section A. 531 (2004), H. 1-2 Y1 - 2004 SN - 0168-9002 SP - 111 EP - 120 ER - TY - JOUR A1 - Walther, T. A1 - Gerthsen, D. A1 - Carius, Reinhard A1 - Förster, Arnold T1 - AlAs/GaAs Quantum well structures: Interface properties investigated by high-resolution transmission electron microscopy and photoluminescence spectroscopy / T. Walther ; D. Gerthsen ; R. Carius ; A. Förster ... JF - Microscopy of semiconducting materials 1993 : proceedings of the Royal Microscopical Society Conference held at Oxford University, 5 - 8 April 1993 / ed. by A. G. Cullis ... - (Conference series / Institute of Physics ; 134) Y1 - 1993 SN - 0-7503-0290-9 N1 - Royal Microscopical Society Conference on Microscopy of Semiconducting Materials <8, 1993, Oxford> ; MSM <8, 1993, Oxford> SP - 449 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Vitusevich, S. A. A1 - Förster, Arnold A1 - Reetz, W. A1 - Lüth, H. A1 - Belyaev, A. E. A1 - Danylyuk, S. V. T1 - Spectral Responsivity of single-quantum-well photodetectors JF - Applied Physics Letters. 77 (2000), H. 1 Y1 - 2000 SN - 1077-3118 SP - 16 EP - 18 ER - TY - JOUR A1 - Vitusevich, S. A. A1 - Förster, Arnold A1 - Reetz, W. A1 - Lüth, H. A1 - Belyaev, A. E. A1 - Danylyuk, S. V. T1 - Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode JF - Nanotechnology. 11 (2000), H. 4 Y1 - 2000 SN - 1361-6528 SP - 305 EP - 308 ER - TY - JOUR A1 - Vitusevich, S. A. A1 - Förster, Arnold A1 - Lüth, H. A1 - Belyaev, A. E. A1 - Danylyuk, S. V. A1 - Konakova, R. V. A1 - Sheka, D. I. T1 - Resonant spectroscopy of electric-field-induced superlattices JF - Journal of Applied Physics. 90 (2001), H. 6 Y1 - 2001 SN - 1089-7550 U6 - http://dx.doi.org/10.1063/1.1392956 SP - 2857 EP - 2861 ER - TY - JOUR A1 - Vitusevich, S. A. A1 - Förster, Arnold A1 - Indlekofer, K.-M. A1 - Lüth, H. A1 - Belyaev, A. E. A1 - Glavin, B. A. A1 - Konakova, R. V. T1 - Tunneling Through X-Valley-Related Impurity States in GaAs/AlAs Resonant-Tunneling Diodes JF - Physical Review . B. 61 (2000), H. 16 Y1 - 2000 SN - 1550-235X SP - 10898 EP - 10904 ER - TY - JOUR A1 - Ungermanns, C. A1 - Ahe, M. v. d. A1 - Carius, Reinhard A1 - Förster, Arnold T1 - Optimization of III/V binary growth with RHEED in MOMBE / C. Ungermanns ; M. v. d. Ahe ; R. Carius ; A. Förster ... JF - Fresenius' Journal of Analytical Chemistry. 358 (1997), H. 1-2 Y1 - 1997 SN - 0937-0633 N1 - ISSN der E-Ausg.: 1432-1130 SP - 101 EP - 104 ER - TY - JOUR A1 - Tillmann, K. A1 - Förster, Arnold T1 - Critical dimensions for the formation of interfacial misfit dislocations of In0.6Ga0.4As islands on GaAs(001) JF - Thin Solid Films. 368 (2000), H. 1 Y1 - 2000 SN - 0040-6090 SP - 93 EP - 104 ER - TY - JOUR A1 - Stock, J. A1 - Malindretos, J. A1 - Indlekofer, K.M. A1 - Pöttgens, Michael A1 - Förster, Arnold A1 - Lüth, Hans T1 - A Vertical Resonant Tunneling Transistor for Application in Digital Logic Circuits JF - IEEE Transactions on Electron Devices (T-ED). 48 (2001), H. 6 Y1 - 2001 SN - 0018-9383 SP - 1028 EP - 1032 ER - TY - JOUR A1 - Srnanek, R. A1 - Geurts, J. A1 - Lentze, M. A1 - Irmer, G. A1 - Donoval, D. A1 - Brdecka, P. A1 - Kordos, P. A1 - Förster, Arnold A1 - Sciana, B. A1 - Radziewicz, D. A1 - Tlaczala, M. T1 - Study of d-doped GaAs layers by micro-Raman spectroscopy on bevelled samples JF - Applied surface science . 230 (2004), H. 1 -4 Y1 - 2004 SN - 0169-4332 N1 - ISSN der E-Ausg.: 0169-4332 SP - 379 EP - 385 ER - TY - JOUR A1 - Schmidt, R. A1 - Tonnesmann, A. A1 - Förster, Arnold A1 - Grimm, M. A1 - Kordos, P. A1 - Lüth, H. T1 - Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates using an InP buffer layer JF - 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO 2000 ; [13 - 14 November 2000, University of Glasgow] / organised by Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow Scotland. MTT/ED/AP/LEO Societies Joint Chapter, United Kingdom and Republic of Ireland Section. With technical co-sponsorship from IEEE Electron Device Society Y1 - 2000 SN - 0-7803-6550-X N1 - EDMO <8, 2000, Glasgow> ; University / Department of Electronics and Electrical Engineering ; IEEE catalog number 00TH8534 SP - 95 EP - 98 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - JOUR A1 - Sabitova, A. A1 - Ebert, Ph. A1 - Lenz, A. A1 - Schaafhausen, S. A1 - Ivanova, L. A1 - Dähne, M. A1 - Hoffmann, A. A1 - Dunin-Borkowski, R. E. A1 - Förster, Arnold A1 - Grandidier, B. A1 - Eisele, H. T1 - Intrinsic bandgap of cleaved ZnO(112¯0) surfaces JF - Applied physics letters Y1 - 2013 SN - 1077-3118 (E-Journal); 0003-6951 (Print) VL - Vol. 102 SP - 021608 ER - TY - JOUR A1 - Rosenauer, A. A1 - Oberst, W. A1 - Litvinov, D. A1 - Gerthsen, D. A1 - Förster, Arnold A1 - Schmidt, R. T1 - Structural and Chemical Investigation of In-0.6Ga0.4As Stranski-Krastanow Layers Burried in GaAs by Transmission Electron Microscopy JF - Physical Review B. 61 (2000), H. 12 Y1 - 2000 SN - 1095-3795 SP - 8276 EP - 8288 ER - TY - JOUR A1 - Mikulics, M. A1 - Marso, M. A1 - Cámara Mayorga, I. A1 - Gusten, R. A1 - Stancek, S. A1 - Michael, E. A. A1 - Schieder, R. A1 - Wolter, M. A1 - Buca, D. A1 - Förster, Arnold A1 - Kordos, P. A1 - Lüth, H. T1 - Photomixers fabricated on nitrogen-ion-implanted GaAs JF - Applied physics letters. 87 (2005) Y1 - 2005 SP - 041106-1 EP - 041106-3 ER - TY - JOUR A1 - Mikulics, M. A1 - Camara, I. A1 - Hardt, A. van der A1 - Fox, A. A1 - Förster, Arnold A1 - Gusten, R. A1 - Lüth, H. A1 - Kordos, P. T1 - Generation of THz radiation by photomixing in low-temperature-grown MBE GaAs JF - Fifth International Conference on Advanced Semiconductor Devices and Microsystems : conference proceedings ; Smolenice Castle, Slovakia, October 17 - 21, 2004 / [organizers: Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and Microelectronics Department, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava]. Ed. by J. Osvald Y1 - 2004 SN - 0-7803-8335-7 N1 - International Conference on Advanced Semiconductor Devices and Microsystems <5, 2004, Smolenice> ; ASDAM <5, 2004, Smolenice> ; IEEE catalog numer: 04EX867 SP - 231 EP - 234 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - JOUR A1 - Mikulics, M. A1 - Adam, R. A1 - Kordos, P. A1 - Förster, Arnold A1 - Lüth, H. A1 - Wu, S. A1 - Zheng, X. A1 - Sobolewski, R. T1 - Ultrafast low-temperature-grown epitaxial GaAs photodetectors transferred on flexible plastic substrates JF - IEEE photonics technology letters : IEEE PTL. 17 (2005), H. 8 Y1 - 2005 SN - 1041-1135 SP - 1725 EP - 1727 ER - TY - JOUR A1 - Maezawa, Koichi A1 - Förster, Arnold T1 - Quantum transport devices based on resonant tunneling JF - Nanoelectronics and information technology : advanced electronic materials and novel devices / Rainer Waser (ed.). Y1 - 2003 SN - 3-527-40363-9 SP - 407 EP - 424 PB - Wiley-VCH CY - Weinheim ER - TY - JOUR A1 - Krafft, B. A1 - Förster, Arnold A1 - Hart, A. van der A1 - Schäpers, T. T1 - Control of Aharonov-Bohm oscillations in a AlGaAs/GaAs ring by asymmetric and symmetric gate biasing JF - Physica E: Low-dimensional Systems and Nanostructures. 9 (2001), H. 4 Y1 - 2001 SN - 1386-9477 SP - 635 EP - 641 ER - TY - JOUR A1 - Hoskens, R.C.P. A1 - Roer, T.G. van de A1 - Tolstikhin, V.I. A1 - Förster, Arnold T1 - Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation JF - LEOS 2000 : 2000 IEEE annual meeting conference proceedings; 13th annual meeting; IEEE Lasers and Electro-Optics Society 2000 annual meeting; 13-16 November 2000, The Westin Rio Mar Beach, Rio Grande, Puerto Rico. Vol. 2 Y1 - 2000 SN - 0-7803-5947-X N1 - 2000 IEEE LEOS annual meeting SP - 444 EP - 445 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - JOUR A1 - Hoskens, R. C. P. A1 - Tolstikhin, V.I. A1 - Förster, Arnold A1 - Roer, T.G. van de T1 - Vertically integrated transistor-laser structure, take 2 JF - WOCSDICE 2000, 24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe : May 29 - June 02, 2000, Aegean Sea, Greece. Y1 - 2000 SN - 0970311109 N1 - WOCSDICE ; (24, 2000) Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe ; (24 : ; 2000.05.29-06.02) PB - Univ. of Michigan CY - Ann Arbor, Mich. ER - TY - JOUR A1 - Hodel, U. A1 - Orzati, A. A1 - Marso, M. A1 - Homann, O. A1 - Fox, A. A1 - Hart, A. v. d. A1 - Förster, Arnold A1 - Kordos, P. A1 - Lüth, H. T1 - A novel InAlAs/InGaAs layer structure for monolithically integrated photoreceiver JF - Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials Y1 - 2000 SN - 0-7803-6320-5 N1 - International Conference on Indium Phosphide and Related Materials <12, 2000, Williamsburg, Va.> SP - 466 EP - 469 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - JOUR A1 - Förster, Arnold A1 - Zettler, J.-T. A1 - Mikkelsen, H. A1 - Leo, K. T1 - Modulated ellipsometric measurements and transfer-matrix calculation of the field-dependent dielectric function of a multiple quantum well / J.-Th. Zettler ; H. Mikkelsen ; K. Leo ... A. Förster JF - Physical Review B . 46 (1992), H. 24 Y1 - 1992 SN - 0163-1829 N1 - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795 SP - 15955 EP - 15962 ER - TY - JOUR A1 - Förster, Arnold A1 - Zamdmer, N. A1 - Hu, Qing A1 - Verghese, S. T1 - Mode-Discriminating Photoconductor and Coplanar Wave-Guide Circuits for Picosecond Sampling. Zamdmer, N.; Hu, Qing ; Verghese, S. ; Förster, A. JF - Applied Physics Letters. 74 (1999), H. 7 Y1 - 1999 SN - 1077-3118 SP - 1039 EP - 1041 ER - TY - JOUR A1 - Förster, Arnold A1 - Zamdmer, N. A1 - Hu, Qing A1 - McIntosh, K. A. T1 - On-chip frequency domain submillimeter-wave transceiver. Zamdmer, N.; Hu, Qing ; McIntosh K. A. ; Verghise, S. ; Förster, A. JF - Applied Physics Letters. 75 (1999), H. 24 Y1 - 1999 SN - 1077-3118 SP - 3877 EP - 3879 ER - TY - JOUR A1 - Förster, Arnold A1 - Wensorra, J. A1 - Indlekofer, K. M. A1 - Lüth, H. T1 - Resonant tunneling in nanocolumns improved by quantum collimation. Wensorra, J.; Indlekofer, K. M.; Förster, A.; Lüth, H. JF - Nano Letters. 5 (2005) Y1 - 2005 SN - 0587-4246 SP - 2470 EP - 2475 ER - TY - JOUR A1 - Förster, Arnold A1 - Vitusevich, S. A. A1 - Belyaev, B. A. T1 - Intrinsic bistability effect in delta doped tunneling diodes / S. A. Vitusevich ; A. Förster ; B. A. Belyaev ... JF - Proceedings of the XXVIII International School on Physics of Semiconducting Compounds : Jaszowiec, Poland, June 6 - 11, 1999 / Polish Academy of Sciences, Institute of Physics. Ed. of the proceedings Wojciech Szuszkiewicz Y1 - 1999 N1 - International School on Physics of Semiconducting Compounds <28, 1999, Jaszowiec> ; Acta physica Polonica : A ; 96, no. 5 CY - Warsaw ER - TY - JOUR A1 - Förster, Arnold A1 - Vitusevich, S. A. A1 - Belyaev, A. E. A1 - Sheka, D. I. T1 - Resonant tunneling effect in a periodically modulated electrical field. Vitusevich, S.A.; Forster, A.; Belyaev, A.E.; Sheka, D.I.; Luth, H.; Klein, N.; Danylyuk, S.V.; Konakova, R. JF - Proceedings of the Tenth International Conference on Modulated Semiconductor Structures : held at the Johannes Kepler University, Linz, Austria, July 23 - 27, 2001 / MSS 10. Guest ed.: Günther Bauer ... Y1 - 2002 N1 - International Conference on Modulated Semiconductor Structures ; (10, 2001, Linz). Zugleich: Physica E: Low-dimensional Systems and Nanostructures. 13(2002)2-4. ISSN 1386-9477 SP - 811 EP - 813 PB - Elsevier CY - Amsterdam [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Vitusevich, S. A. A1 - Belyaev, A. E. A1 - Indlekofer, K. M. T1 - Resonant tunneling effect in delta p-n GaAs junction. Vitusevich, S. A.; Förster, A.; Belyaev, A. E.; Indlekofer, K. M.; Lüth, H.; Konakova, R. V. JF - Microelectronic Engineering. 46 (1999), H. 1-4 Y1 - 1999 SN - 0167-9317 N1 - International Conference on Micro- and Nanofabrication SP - 169 EP - 172 ER - TY - JOUR A1 - Förster, Arnold A1 - Vitusevich, S. A. A1 - Belyaev, A. E. T1 - Optically controlled 2D tunneling in GaAs delta-doped p-n junction / S. A. Vitusevich ; A. Förster ; A. E. Belyaev ... JF - Semiconductor Physics, Quantum Electronics & Optoelectronics (SQO) : International Scientific Journal. 2 (1999), H. 1 Y1 - 1999 SN - 1605-6582 SP - 7 EP - 10 ER - TY - JOUR A1 - Förster, Arnold A1 - Verghese, S. A1 - Zamdmer, N. A1 - Hu, Qing T1 - An optical correlator using a low-temperature-grown GaAs photoconductor / S. Verghese ; N. Zamdmer ; Qing Hu .... A. Förster JF - Applied physics letters. 69 (1996), H. 6 Y1 - 1996 SN - 0003-6951 N1 - ISSN der E-Ausg.: 1077-3118 SP - 842 EP - 844 ER - TY - JOUR A1 - Förster, Arnold A1 - Verghese, S. A1 - Zamdmer, N. A1 - Hu, Qing T1 - Cryogenic picosecond sampling using fiber-coupled photoconductive switch / S. Verghese ; N. Zamdmer ; Qing Hu ; A. Förster JF - Applied physics letters. 70 (1997), H. 20 Y1 - 1997 SN - 0003-6951 N1 - ISSN der E-Ausg.: 1077-3118 SP - 2644 EP - 2646 ER - TY - JOUR A1 - Förster, Arnold A1 - Tulke, A. A1 - Lüth, H. T1 - The Schottky barrier at the InSb(110)–Sn interface JF - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 5 (1987), H. 4 Y1 - 1987 SN - 1071-1023 N1 - ISSN der E-Ausg.: 0734-211X SP - 1054 EP - 1056 ER - TY - JOUR A1 - Förster, Arnold A1 - Tillmann, K. A1 - Thust, M. T1 - Determination of segregation, elastic strain and thin-foil relaxation in InxGa-1-x As islands on GaAs(001) by high resolution transmission electron microscopy / K. Tillmann ; A. Thust ; M. Lentzen ... A. Förster ... JF - Philosophical magazine / Letters. 74 (1996), H. 5 Y1 - 1996 SN - 1362-3036 SP - 309 EP - 315 ER - TY - JOUR A1 - Förster, Arnold A1 - Tillmann, K. A1 - Gerthsen, D. A1 - Pfundstein, P. T1 - Structural transformations and strain relaxation mechanisms of In0.6Ga0.4As islands grown by molecular beam epitaxy on GaAs(001) substrates / Tillmann, K. ; Gerthsen, D. ; Pfundstein, P. ; Förster, A. ; Urban, K. JF - Journal of applied physics. 78 (1995), H. 6 Y1 - 1995 SN - 0021-8979 SP - 3824 EP - 3832 ER - TY - JOUR A1 - Förster, Arnold A1 - Tillmann, K. A1 - Gerthsen, D. T1 - Growth morphology and misfit relaxation of MBE-grown In0.6 G0.4 As on GaAs(001) / K. Tillmann ; D. Gerthsen ; A. Förster ... JF - Thin solid films. 261 (1995), H. 1-2 Y1 - 1995 SN - 0040-6090 SP - 139 EP - 147 ER - TY - JOUR A1 - Förster, Arnold A1 - Tillmann, K. A1 - Gerthsen, D. T1 - Morphological transformations of MBE-grown In0.6Ga0.4As island on GaAs(001) substrates / K. Tillmann ; D. Gerthsen ; P. Pfundstein ; A. Förster ... JF - Microscopy of semiconducting materials 1995 : proceedings of the Institute of Physics Conference held at Oxford University, 20 - 23 March 1995 / Ed. by A G Cullis ... - (Conference series / Institute of Physics ; 146) Y1 - 1995 SN - 0-7503-0347-6 N1 - MSM <9, 1995, Oxford> ; Institut of Physics SP - 195 EP - ff. PB - Institute of Physics CY - Bristol [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Stock, J. A1 - Indlekofer, K. M. T1 - Perspectives of resonant tunneling diodes JF - Recent research developments in materials science & engineering/ 1,2 Y1 - 2002 SN - 81-7895-057-X N1 - Nebent.: Materials science & engineering SP - 527 EP - 556 PB - Transworld Research Network CY - Trivandrum, India ER - TY - JOUR A1 - Förster, Arnold A1 - Spitzer, A. A1 - Lüth, H. T1 - The adsorption of fluor-carbon complexes on GaAs(110) studied by electron energy loss spectroscopy JF - Surface Science. 172 (1986), H. 1 Y1 - 1986 SN - 0039-6028 N1 - ISSN der E-Ausg.: 0039-6028 SP - 174 EP - 182 ER - TY - JOUR A1 - Förster, Arnold A1 - Schönhut, J. A1 - Metzner, C. T1 - Optical investigation of impurity bands in a delta-doped n-layer / J. Schönhut ; C. Metzner ; S. Müller ... A. Förster ... JF - Solid state electronics. 40 (1996), H. 1-8 Y1 - 1996 SN - 0038-1101 SP - 701 EP - 705 ER - TY - JOUR A1 - Förster, Arnold A1 - Schäpers, T. A1 - Müller, F. A1 - Lengeler, B. T1 - Reflection and transmission of ballistic electrons at a potential barrier / Schäpers, T. ; Müller, F. ; Förster, A. ; Lengeler, B. ; Lüth, H. JF - Superlattices and microstructures . 14 (1993), H. 1 Y1 - 1993 SN - 0749-6036 SP - 57 ER - TY - JOUR A1 - Förster, Arnold A1 - Schäpers, T. A1 - Müller, F. T1 - Control of ballistic electrons in (AlGa)As/GaAs heterostructures by means of superconducting niobium gate structures / T. Schäpers ; F. Müller ; A. Förster ... JF - Surface Science. 305 (1994), H. 1-3 Y1 - 1994 SN - 0039-6028 N1 - ISSN der E-Ausg.: 0039-6028 SP - 460 EP - 464 ER - TY - JOUR A1 - Förster, Arnold A1 - Schäpers, T. A1 - Krüger, M. A1 - Appenzeller, J. T1 - Effect of electron-electron interaction on hot ballistic electron beams / Th. Schäpers ; M. Krüger ; J. Appenzeller ; A. Förster ... JF - Applied physics letters. 66 (1995), H. 26 Y1 - 1995 SN - 0003-6951 N1 - ISSN der E-Ausg.: 1077-3118 SP - 3603 EP - 3606 ER - TY - JOUR A1 - Förster, Arnold A1 - Schäfer, B.-J. A1 - Londschien, M. T1 - Arsenic passivation of MOMBE grown GaAs surfaces / B. -J. Schäfer ; A. Förster ; M. Londschien ... JF - Surface Science. 204 (1988), H. 3 Y1 - 1988 SN - 0039-6028 N1 - ISSN der E-Ausg.: 0039-6028 SP - 485 EP - 490 ER - TY - JOUR A1 - Förster, Arnold A1 - Schmidt, T. A1 - Tewordt, M. A1 - Haug, R. J. T1 - Peak-to-valley ratio of small resonant-tunneling diodes with various barrier-thickness asymmetries / T. Schmidt ; M. Tewordt ; R. J. Haug ... A. Förster ... JF - Applied physics letters. 68 (1996), H. 6 Y1 - 1996 SN - 0003-6951 N1 - ISSN der E-Ausg.: 1077-3118 SP - 838 EP - 840 ER - TY - JOUR A1 - Förster, Arnold A1 - Schmidt, T. A1 - Tewordt, M. A1 - Blick, R. H. T1 - Quantum-dot ground states in a magnetic field studied by single-electron tunneling spectroscopy on double-barrier heterostructures / T. Schmidt ; M. Tewordt ; R. H. Blick ... A. Förster ... JF - Physical Review B . 51 (1995), H. 8 Y1 - 1995 SN - 0163-1829 N1 - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795 SP - 5570 EP - 5573 ER - TY - JOUR A1 - Förster, Arnold A1 - Schmidt, T. A1 - Tewordt, M. T1 - Single-electron-tunneling spectroscopy of asymmetric laterally confined double-barrier heterostructures / T. Schmidt ; M. Tewordt ; R. J. Haug ... A. Förster ... JF - Solid state electronics. 40 (1996), H. 1-8 Y1 - 1996 SN - 0038-1101 SP - 15 EP - 19 ER - TY - JOUR A1 - Förster, Arnold A1 - Schmidt, T. A1 - Haug, R. J. T1 - Single-electron transport in small resonant-tunneling diodes with various barrier-thickness asymmetries / T. Schmidt ; R. J. Haug ; K. v. Klitzing ; A. Förster ... JF - Physical review / B, Condensed matter and materials physics. 55 (1997), H. 4 Y1 - 1997 SN - 1095-3795 SP - 2230 EP - 2236 ER - TY - JOUR A1 - Förster, Arnold A1 - Schmidt, T. A1 - Haug, R. J. T1 - Imaging the local density of states in a disordered semiconductor / T. Schmidt ; R. J. Haug ; V. I. Fal'ko ... A. Förster ... JF - 23rd International Conference on the Physics of Semiconductors : Berlin, Germany, July 21 - 26, 1996 / ed.: Matthias Scheffler ... - Vol. 3 Y1 - 1996 SN - 981-02-2947-X N1 - International Conference on the Physics of Semiconductors <23, 1996, Berlin> SP - 2251 EP - ff. PB - World Scientific CY - Singapore [u.a.] ER - TY - JOUR A1 - Förster, Arnold A1 - Schmidt, T. A1 - Haug, R. J. T1 - Spectroscopy of local density of states fluctuations in a disordered conductor / T. Schmidt ; R. J. Haug ; V. I. Fal'ko ... A. Förster ... JF - Europhysics letters. 36 (1996), H. 1 Y1 - 1996 SN - 1286-4854 SP - 61 EP - 66 ER - TY - JOUR A1 - Förster, Arnold A1 - Schmidt, T. A1 - Haug, R. J. T1 - Spectroscopy of the single-particle states of a quantum-dot molecule / T. Schmidt ; R. J. Haug ; K. v. Klitzing ; A. Förster ... JF - Physical review letters. 78 (1997), H. 8 Y1 - 1997 SN - 0031-9007 N1 - ISSN der E-Ausg.: 1079-7114 SP - 1544 EP - 1547 ER -