TY  - JOUR
A1  - Förster, Arnold
A1  - Layet, J. M.
A1  - Lüth, H.
T1  - Evaluation of dopant profiles and diffusion constants by means of electron energy loss spectroscopy
JF  - Applied Surface Science. 41 - 42 (1989)
Y1  - 1989
SN  - 0169-4332
N1  - ISSN der E-Ausg.: 0169-4332
SP  - 306
EP  - 311
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Rizzi, Angela
A1  - Lüth, H.
T1  - Epitaxial growth and characterization of Si/NiSi2/Si(111) heterostructures / Angela Rizzi ; A. Förster ; H. Lüth
JF  - Surface Science. 211 - 212 (1989)
Y1  - 1989
SN  - 0039-6028
N1  - ISSN der E-Ausg.: 0039-6028
SP  - 620
EP  - 629
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lauter, J.
A1  - Bauser, E.
T1  - Epitaxial gallium arsenide for nuclear radiation detector applications / J. Lauter ; E. Bauser ; A. Förster ...
JF  - Nuclear physics B / Proceedings supplements. 44 (1995), H. 1-3
Y1  - 1995
SN  - 0920-5632
SP  - 381
EP  - 385
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Müller, F.
A1  - Lengeler, B.
A1  - Schäpers, T.
T1  - Electron-electron interaction in ballistic electron beams / F. Müller ; B. Lengeler ; Th. Schäpers ... A. Förster...
JF  - Physical Review B . 51 (1995), H. 8
Y1  - 1995
SN  - 0163-1829
N1  - 2. ISSN: 1098-0121 ; ISSN der E-Ausg.: 1095-3795
SP  - 5099
EP  - 5105
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Appenzeller, J.
A1  - Schroer, C.
T1  - Electron interference in a T-shaped quantum transistor based on Schottky-gate technology / J. Appenzeller ; Ch. Schroer ; Th. Schäpers ... A. Förster ...
JF  - Physical review / B, Condensed matter and materials physics. 53 (1996), H. 15
Y1  - 1996
SN  - 1095-3795
SP  - 9959
EP  - 9963
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Betko, J.
A1  - Kordos, P.
A1  - Kuklovsky, S.
T1  - Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature / J. Betko ; P. Kordos ; S. Kuklovsky ; A. Förster ...
JF  - Materials science and engineering B: Solid– state materials for advanced technology. 28 (1994), H. 1-3
Y1  - 1994
SN  - 0921-5107
SP  - 147
EP  - 150
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kordos, P.
A1  - Betko, J.
T1  - Electrical and structural characterization of MBE GaAs grown at temperatures between 200 and 600 °C / P. Kordos ; J. Betko; A. Förster ...
JF  - Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141)
Y1  - 1995
SN  - 0-7503-0226-7
N1  - International Symposium on Compound Semiconductors <21, 1994, San Diego, Calif.> ;  Institute of Physics <London>
SP  - 295
EP  - ff.
PB  - Institute of Physics
CY  - Bristol [u.a.]
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lange, J.
A1  - Gerthsen, D.
T1  - Effect of interface roughness and scattering on the performance of AlAs/InGaAs resonant tunneling diodes
JF  - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11 (1993), H. 4
Y1  - 1993
SN  - 1071-1023
N1  - ISSN der E-Ausg.: 0734-211X
SP  - 1743
EP  - 1747
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schäpers, T.
A1  - Krüger, M.
A1  - Appenzeller, J.
T1  - Effect of electron-electron interaction on hot ballistic electron beams / Th. Schäpers ; M. Krüger ; J. Appenzeller ; A. Förster ...
JF  - Applied physics letters. 66 (1995), H. 26
Y1  - 1995
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 3603
EP  - 3606
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Leuther, A.
A1  - Lüth, H.
T1  - DX centres, conduction band offsets and Si-dopant segregation in heterostructures / A. Leuther ; A. Förster ; H. Lüth ...
JF  - Semiconductor science and technology. 11 (1996), H. 5
Y1  - 1996
SN  - 1361-6641
SP  - 766
EP  - 771
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Hauke, M.
A1  - Jakumeit, J.
A1  - Krafft, B.
T1  - DX Centers in Al0.3Ga0.7As/GaAs Analyzed by Point Contact Measurements. Hauke, M.; Jakumeit, J.; Krafft, B.; Nimtz, G.; Förster, A.; Lüth, H.
JF  - Journal of Applied Physics. 84 (1998), H. 4
Y1  - 1998
SN  - 1089-7550
SP  - 2034
EP  - 2039
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lüth, Hans
A1  - Schäpers, Thomas
T1  - Die neue Welt
JF  - Spektrum der Wissenschaft (1999)
Y1  - 1999
SN  - 0170-2971
SP  - 90
EP  - 93
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Tillmann, K.
A1  - Thust, M.
T1  - Determination of segregation, elastic strain and thin-foil relaxation in InxGa-1-x As islands on GaAs(001) by high resolution transmission electron microscopy / K. Tillmann ; A. Thust ; M. Lentzen ... A. Förster ...
JF  - Philosophical magazine / Letters. 74 (1996), H. 5
Y1  - 1996
SN  - 1362-3036
SP  - 309
EP  - 315
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Rose, D.
A1  - Pietsch, U.
A1  - Metzger, T. H.
T1  - Depth resolved investigations of the relaxation behaviour in strained GaInAs/GaAs superlattices using grazing incidence X-ray diffraction / Rose, D. ; Pietsch, U. ; Förster, A. ; Metzger, T. H.
JF  - Nuclear instruments and methods in physics research / Section B, Beam interactions with materials and atoms. 97 (1995), H. 1-4
Y1  - 1995
SN  - 0168-583X
SP  - 333
EP  - 336
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Rose, D.
A1  - Pietsch, U.
A1  - Metzger, H.
T1  - Depth resolved investigation of the relaxation behaviour in strained GaInAs/GaAs superlattices / Rose, D. ; Pietsch, U. ; Förster, A. ; Metzger, H....
JF  - Physica B: condensed matter. 198 (1994), H. 1-3
Y1  - 1994
SN  - 0921-4526
SP  - 256
EP  - 258
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Indlekofer, K.M.
A1  - Lüth, H.
T1  - Density-matrix description of a quantum dot system with variable lateral confinement in the single-electron tunneling regime. Indlekofer, K.M.; Förster, A.; Lüth, H.
JF  - Physica B: Condensed Matter. 314 (2002), H. 1-4
Y1  - 2002
SN  - 0921-4526
SP  - 499
EP  - 502
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Darmo, J.
A1  - Dubecký, F.
A1  - Kordos, P.
T1  - Deep-level states and electrical properties of GaAs grown at 250 °C / J. Darmo ; F. Dubecký ; P. Kordos ; A. Förster ...
JF  - Materials science and engineering B: Solid&#150; state materials for advanced technology. 28 (1994), H. 1-3
Y1  - 1994
SN  - 0921-5107
SP  - 393
EP  - 396
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Verghese, S.
A1  - Zamdmer, N.
A1  - Hu, Qing
T1  - Cryogenic picosecond sampling using fiber-coupled photoconductive switch / S. Verghese ; N. Zamdmer ; Qing Hu ; A. Förster
JF  - Applied physics letters. 70 (1997), H. 20
Y1  - 1997
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 2644
EP  - 2646
ER  - 
TY  - JOUR
A1  - Tillmann, K.
A1  - Förster, Arnold
T1  - Critical dimensions for the formation of interfacial misfit dislocations of In0.6Ga0.4As islands on GaAs(001)
JF  - Thin Solid Films. 368 (2000), H. 1
Y1  - 2000
SN  - 0040-6090
SP  - 93
EP  - 104
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schäpers, T.
A1  - Müller, F.
T1  - Control of ballistic electrons in (AlGa)As/GaAs heterostructures by means of superconducting niobium gate structures / T. Schäpers ; F. Müller ; A. Förster ...
JF  - Surface Science. 305 (1994), H. 1-3
Y1  - 1994
SN  - 0039-6028
N1  - ISSN der E-Ausg.: 0039-6028
SP  - 460
EP  - 464
ER  - 
TY  - JOUR
A1  - Krafft, B.
A1  - Förster, Arnold
A1  - Hart, A. van der
A1  - Schäpers, T.
T1  - Control of Aharonov-Bohm oscillations in a AlGaAs/GaAs ring by asymmetric and symmetric gate biasing
JF  - Physica E: Low-dimensional Systems and Nanostructures. 9 (2001), H. 4
Y1  - 2001
SN  - 1386-9477
SP  - 635
EP  - 641
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Rosenauer, A.
A1  - Fischer, U.
A1  - Gerthsen, D.
T1  - Composition evaluation of InxGa1 – xAs Stranski-Krastanow-island structures by strain state analysis / A. Rosenauer ; U. Fischer ; D. Gerthsen ; A. Förster
JF  - Applied physics letters. 71 (1997), H. 26
Y1  - 1997
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 3868
EP  - 3870
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Rosenauer, A.
A1  - Fischer, U.
A1  - Gerthsen, D.
T1  - Composition evaluation by lattice fringe analysis. Rosenauer, A.; Fischer U.;  Gerthsen D.;  Förster A.
JF  - Ultramicroscopy. 72 (1998), H. 3-4
Y1  - 1998
SN  - 0304-3991
SP  - 121
EP  - 133
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Hardtdegen, Hilde
A1  - Ungermanns, C.
T1  - Comparative investigation of electrical and optical characteristics of AlxGa1-xAs/GaAs structures deposited by LP-MOVPE and MBE / H. Hardtdegen ; M. Hollfelder ; C. Ungermanns ... A. Förster ...
JF  - Compound semiconductors, 1994 : proceedings of the twenty-first International Symposium on Compound Semiconductors held in San Diego, California, 18 - 22 September, 1994 / ed. by Herb Goronkin ... - (Conference series / Institute of Physics ; 141)
Y1  - 1995
SN  - 0-7503-0226-7
N1  - International Symposium on Compound Semiconductors <21, 1994, San Diego, Calif.> ;  Institute of Physics <London>
SP  - 81
EP  - ff.
PB  - Institute of Physics
CY  - Bristol [u.a.]
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lachenmann, S. G.
A1  - Friedrich, I.
T1  - Charge transport in superconductor/semiconductor/normal-conductor step junctions / S. G. Lachenmann ; I. Friedrich ; A. Förster ...
JF  - Physical review / B, Condensed matter and materials physics. 56 (1997), H. 21
Y1  - 1997
SN  - 1095-3795
SP  - 14108
EP  - 14115
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Novak, J.
A1  - Kucera, M.
A1  - Morvic, M.
T1  - Characterization of low-temperature GaAs by galvanomagnetic an photoluminescence measurements / J. Novák ; M. Kucera ; M. Morvic ... A. Förster ...
JF  - Materials science and engineering B: Solid&#150; state materials for advanced technology. 44 (1997), H. 1-3
Y1  - 1997
SN  - 0921-5107
SP  - 341
EP  - 344
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Morvic, M.
A1  - Betko, J.
A1  - Novak, J.
T1  - Characterization of low-temperature GaAs by conductivity, Hall effect and magnetoresistance measurements.  Morvic, M., Betko, J.; Novak, J.; Förster, A.; Kordos, P.
JF  - 2nd Symposium on Non-Stoichiometric III-V Compounds : [4th - 6th October 1999, Erlangen] / [ed. by T. Marek ...] Friedrich-Alexander-Universität Erlangen-Nürnberg
Y1  - 1999
SN  - 3-932392-19-1
N1  - Symposium on Non-Stoichiometric III-V Compounds <2, 1999, Erlangen>
SP  - 79
EP  - 85
PB  - Lehrstuhl für Mikrocharakterisierung
CY  - Erlangen
ER  - 
TY  - JOUR
A1  - Darmo, J.
A1  - Schäffer, F.
A1  - Förster, Arnold
A1  - Kordos, P.
T1  - Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range
JF  - ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]
Y1  - 2000
SN  - 0780359399
N1  - International Conference on Advanced Semiconductor Devices and Microsystems ; (3rd : ; 2000 : ; Smolenice, Slovakia)
SP  - 147
EP  - 150
PB  - IEEE
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Ohler, C.
A1  - Daniels, C.
T1  - Barrier height at clean Au/InAs(100) interfaces / C. Ohler ; C. Daniels ; A. Förster ...
JF  - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15 (1997), H. 3
Y1  - 1997
SN  - 0169-4332
SP  - 702
EP  - 706
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Ohler, C.
A1  - Moers, J.
T1  - Band offsets at heavily strained III - V interfaces / C. Ohler ; A. Förster ; J. Moers...
JF  - Journal of Physics D: Applied Physics. 30 (1997), H. 10
Y1  - 1997
SN  - 0022-3727
N1  - ISSN der E-Ausg.: 1361-6463
SP  - 1436
EP  - 1441
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Rosenauer, A.
A1  - Remmele, T.
T1  - Atomic scale strain measurements by the digital analysis of transmission electron microscopic lattice images / A. Rosenauer ; T. Remmele ; D. Gerthsen ... A. Förster
JF  - Optik : international journal for light and electron optics. 105 (1997), H. 3
Y1  - 1997
SN  - 0030-4026
SP  - 99
EP  - 107
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Rosenauer, A.
A1  - Oberst, W.
A1  - Gerthsen, D.
T1  - Atomic scale analysis of the indium distribution in InGaAs/GaAs (001) heterostructures: segregation, lateral indium redistribution and the effect of growth interruptions. Rosenauer, A. ; Oberst, W. ; Gerthsen, D. ; Förster, A.
JF  - Thin Solid Films. 357 (1999)
Y1  - 1999
SN  - 0040-6090
SP  - 18
EP  - 21
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Schäfer, B.-J.
A1  - Londschien, M.
T1  - Arsenic passivation of MOMBE grown GaAs surfaces / B. -J. Schäfer ;  A. Förster ; M. Londschien ...
JF  - Surface Science. 204 (1988), H. 3
Y1  - 1988
SN  - 0039-6028
N1  - ISSN der E-Ausg.: 0039-6028
SP  - 485
EP  - 490
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Resch, U.
A1  - Essera, N.
A1  - Raptis, Y. S.
T1  - Arsenic passivation of MBE grown GaAs(100): structural and electronic properties of the decapped surfaces / U. Resch ;  N. Essera ; Y. S. Raptis ... A. Förster ...
JF  - Surface Science. 269-270 (1992)
Y1  - 1992
SN  - 0039-6028
N1  - ISSN der E-Ausg.: 0039-6028
SP  - 797
EP  - 803
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Darmo, J.
A1  - Dubecky, F.
A1  - Kordos, P.
T1  - Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs. Darmo, J.; Dubecky, F.; Kordos, P.; Förster, A.
JF  - Applied Physics Letters. 72 (1998), H. 5
Y1  - 1998
SN  - 1077-3118
SP  - 590
EP  - 592
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Darmo, J.
A1  - Dubecký, F.
A1  - Kordos, P.
T1  - Annealing characteristics of native defects in low-temperature-grown MBE GaAs / J. Darmo ; F. Dubecky ; P. Kordos ; A. Förster
JF  - Semiconducting and insulating materials 1996 : proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC '9), April 29 - May 3, 1996, Toulouse, France / [IEEE]
Y1  - 1996
SN  - 0-7803-3095-1
N1  - 2. ISBN: 0-7803-3179-6 ; Conference on Semiconducting and Insulating Materials <9, 1996, Toulouse> ; Institute of Electrical and Electronics Engineers ; IEEE Cat. No.96CH35881
SP  - 67
EP  - ff.
CY  - Piscataway, NJ [u.a.]
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Verghese, S.
A1  - Zamdmer, N.
A1  - Hu, Qing
T1  - An optical correlator using a low-temperature-grown GaAs photoconductor / S. Verghese ; N. Zamdmer ; Qing Hu .... A. Förster
JF  - Applied physics letters. 69 (1996), H. 6
Y1  - 1996
SN  - 0003-6951
N1  - ISSN der E-Ausg.: 1077-3118
SP  - 842
EP  - 844
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Marso, M.
A1  - Gersdorf, P.
A1  - Fox, A.
T1  - An InAlAs-InGaAs OPFET with responsivity above 200 A/W at 1.3-&#956;m wavelength. Marso, M.; Gersdorf, P.; Fox, A.; Hodel, U.; Lambertini, R.; Kordos, P.
JF  - IEEE Photonics Technology Letters. 11 (1999), H. 1
Y1  - 1999
SN  - 1041-1135
SP  - 117
EP  - 119
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lauter, J.
A1  - Protic, D.
A1  - Lüth, H.
T1  - AlGaAs/GaAs SAM-avalanche photodiode : an X-ray detector for low energy photons / J. Lauter ;  D. Protic ; A. Förster ; H. Lüth
JF  - Nuclear instruments and methods in physics research section A: Accelerators, spectrometers, detectors and associated equipment. 356 (1995), H. 2-3
Y1  - 1995
SN  - 0168-9002
SP  - 324
EP  - 329
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lauter, J.
A1  - Lüth, H.
T1  - AlGaAs/GaAs avalanche detector array-1 GBit/s X-ray receiver fortiming measurements / J. Lauter ; A. Förster ; H. Lüth ...
JF  - IEEE Transactions on Nuclear Science (T-NS). 43 (1996), H. 3, Part 2
Y1  - 1996
SN  - 0018-9499
SP  - 1446
EP  - 1451
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Lauter, J.
A1  - Lüth, H.
T1  - AlGaAs/GaAs avalanche detector array -1 GBit/s X-ray receiver for timing measurements / J. Lauter ; A. Förster ; H. Lüth ...
JF  - 1995 IEEE conference record : October 21 - 28, 1995, San Francisco / Patricia A. Moonier, guest ed. - Vol. 1
Y1  - 1996
SN  - 0-7803-3180-X
N1  - Nuclear Science Symposium <1995, San Francisco, Calif.> ; Medical Imaging Conference <1995, San Francisco, Calif.> ; IEEE catalog number: 95CH35898
SP  - 579
EP  - ff.
PB  - IEEE Service Center
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Walther, T.
A1  - Gerthsen, D.
A1  - Carius, Reinhard
A1  - Förster, Arnold
T1  - AlAs/GaAs Quantum well structures: Interface properties investigated by high-resolution transmission electron microscopy and photoluminescence spectroscopy / T. Walther ; D. Gerthsen ; R. Carius ; A. Förster ...
JF  - Microscopy of semiconducting materials 1993 : proceedings of the Royal Microscopical Society Conference held at Oxford University, 5 - 8 April 1993 / ed. by A. G. Cullis ... - (Conference series / Institute of Physics ; 134)
Y1  - 1993
SN  - 0-7503-0290-9
N1  - Royal Microscopical Society Conference on Microscopy of Semiconducting Materials <8, 1993, Oxford> ; MSM <8, 1993, Oxford>
SP  - 449
EP  - ff.
PB  - Institute of Physics
CY  - Bristol [u.a.]
ER  - 
TY  - JOUR
A1  - Stock, J.
A1  - Malindretos, J.
A1  - Indlekofer, K.M.
A1  - Pöttgens, Michael
A1  - Förster, Arnold
A1  - Lüth, Hans
T1  - A Vertical Resonant Tunneling Transistor for Application in Digital Logic Circuits
JF  - IEEE Transactions on Electron Devices (T-ED). 48 (2001), H. 6
Y1  - 2001
SN  - 0018-9383
SP  - 1028
EP  - 1032
ER  - 
TY  - JOUR
A1  - Hodel, U.
A1  - Orzati, A.
A1  - Marso, M.
A1  - Homann, O.
A1  - Fox, A.
A1  - Hart, A. v. d.
A1  - Förster, Arnold
A1  - Kordos, P.
A1  - Lüth, H.
T1  - A novel InAlAs/InGaAs layer structure for monolithically integrated photoreceiver
JF  - Conference Proceedings: 2000 International Conference on Indium Phosphide and related materials
Y1  - 2000
SN  - 0-7803-6320-5
N1  - International Conference on Indium Phosphide and Related Materials <12, 2000, Williamsburg, Va.>
SP  - 466
EP  - 469
PB  - IEEE Service Center
CY  - Piscataway, NJ
ER  - 
TY  - JOUR
A1  - Förster, Arnold
A1  - Kordos, P.
A1  - Marso, M.
A1  - Rüders, F.
T1  - 550 GHz bandwidth photodetector on low-temperature grown molecular-beam epitaxial GaAs.  Kordos, P., Förster, A.; Marso, M.; Rüders, F.
JF  - Electronics Letters. 34 (1998), H. 1
Y1  - 1998
SN  - 1350-911X
SP  - 119
EP  - 120
ER  -