Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates using an InP buffer layer

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Author:R. Schmidt, A. Tonnesmann, Arnold Förster, M. Grimm, P. Kordos, H. Lüth
Parent Title (English):8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO 2000 ; [13 - 14 November 2000, University of Glasgow] / organised by Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow Scotland. MTT/ED/AP/LEO Societies Joint Chapter, United Kingdom and Republic of Ireland Section. With technical co-sponsorship from IEEE Electron Device Society
Publisher:IEEE Operations Center
Place of publication:Piscataway, NJ
Document Type:Article
Year of Completion:2000
Date of the Publication (Server):2012/12/18
Length:280 S. : Ill., graph. Darst.
First Page:95
Last Page:98
EDMO <8, 2000, Glasgow> ; University <Glasgow> / Department of Electronics and Electrical Engineering ; IEEE catalog number 00TH8534
Institutes:FH Aachen / Fachbereich Energietechnik
FH Aachen / INB - Institut für Nano- und Biotechnologien