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A major design step in IETO concept realization that allows overcurrent protection and pushes limits of switching performance

  • This paper presents the latest prototype of the integrated emitter turn-off thyristor concept, which potentially ranks among thyristor high-power devices like the gate turn-off thyristor and the integrated gate-commutated thyristor (IGCT). Due to modifications of the external driver stage and mechanical press-pack design optimization, this prototype allows for full device characterization. The turn-off capability was increased to 1600 A with an active silicon area of 823mm2 . This leads to a transient peak power of 672.1kW/cm² . Within this paper, measurements and concept assessment are presented and a comparison to state-of-the-art IGCT devices is provided.

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Metadaten
Author:Michael Bragard, H. van Hoek, R. W. De Doncker
DOI:https://doi.org/10.1109/TPEL.2012.2189136
ISSN:0885-8993
Parent Title (English):IEEE transactions on power electronics
Publisher:IEEE
Place of publication:New York
Document Type:Article
Language:English
Year of Completion:2012
Date of the Publication (Server):2015/01/07
Volume:27
Issue:9
First Page:4163
Last Page:4171
Link: https://doi.org/10.1109/TPEL.2012.2189136
Zugriffsart:campus
Institutes:FH Aachen / Fachbereich Elektrotechnik und Informationstechnik
collections:Verlag / IEEE