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Fabrication and characterisation of GaAs Gunn Diode Chips for applications at 77 GHz in automotive industry

  • GaAs-based Gunn diodes with graded AlGaAs hot electron injector heterostructures have been developed under the special needs in automotive applications. The fabrication of the Gunn diode chips was based on total substrate removal and processing of integrated Au heat sinks. Especially, the thermal and RF behavior of the diodes have been analyzed by DC, impedance and S-parameter measurements. The electrical investigations have revealed the functionality of the hot electron injector. An optimized layer structure could fulfill the requirements in adaptive cruise control (ACC) systems at 77 GHz with typical output power between 50 and 90 mW.

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Metadaten
Author:Arnold Förster, Jürgen Stock, Simone Montanari, Mihail Ion Lepsa, Hans Lüth
URN:urn:nbn:de:hbz:a96-opus-1462
DOI:https://doi.org/10.21269/116
Document Type:Conference Proceeding
Language:English
Year of Completion:2006
Publishing Institution:Fachhochschule Aachen
Contributing Corporation:International Symposium on Sensor Science, I3S 2005 <3; 2005; Juelich, Germany>
Date of the Publication (Server):2006/05/22
Tag:GaAs hot electron injector; Gunn diode; microwave generation
GND Keyword:Biosensor
Source:http://www.mdpi.org/sensors/papers/s6040350.pdf
Institutes:FH Aachen / Fachbereich Medizintechnik und Technomathematik
FH Aachen / INB - Institut für Nano- und Biotechnologien
Dewey Decimal Classification:5 Naturwissenschaften und Mathematik / 57 Biowissenschaften; Biologie / 570 Biowissenschaften; Biologie
collections:FH Aachen / International Symposium on Sensor Science, I3S 2005 <3; 2005; Ju