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Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range

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Author:J. Darmo, F. Schäffer, Arnold Förster, P. Kordos
ISBN:0780359399
Parent Title (English):ASDAM 2000 : conference proceedings / edited by Jozef Osvald ... [et al.]
Publisher:IEEE
Place of publication:Piscataway, NJ
Document Type:Article
Language:English
Year of Completion:2000
Date of the Publication (Server):2012/12/18
Length:XI, 481 S.: Ill
First Page:147
Last Page:150
Note:
International Conference on Advanced Semiconductor Devices and Microsystems ; (3rd : ; 2000 : ; Smolenice, Slovakia)
Link:http://dx.doi.org/10.1109/ASDAM.2000.889470
Zugriffsart:campus
Institutes:FH Aachen / Fachbereich Energietechnik
FH Aachen / INB - Institut für Nano- und Biotechnologien