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Structural transformations and strain relaxation mechanisms of In0.6Ga0.4As islands grown by molecular beam epitaxy on GaAs(001) substrates / Tillmann, K. ; Gerthsen, D. ; Pfundstein, P. ; Förster, A. ; Urban, K.

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Metadaten
Author:Arnold Förster, K. Tillmann, D. Gerthsen, P. Pfundstein
ISBN:0021-8979
Parent Title (English):Journal of applied physics. 78 (1995), H. 6
Document Type:Article
Language:English
Year of Completion:1995
Date of the Publication (Server):2012/12/18
First Page:3824
Last Page:3832
Link:http://dx.doi.org/10.1063/1.359897
Zugriffsart:campus
Institutes:FH Aachen / Fachbereich Energietechnik