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Transport properties of gated resonant tunneling diodes in the single electron regime. Griebel, M.; Indlekofer, K. M.; Förster, A.; Lüth, H.

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Metadaten
Author:Arnold Förster, M. Griebel, K. M. Indlekofer, H. Lüth
ISBN:1089-7550
Parent Title (English):Journal of Applied Physics. 84 (1998), H. 12
Document Type:Article
Language:English
Year of Completion:1998
Date of the Publication (Server):2012/12/18
First Page:6719
Last Page:6724
Link:http://dx.doi.org/10.1063/1.368998
Zugriffsart:campus
Institutes:FH Aachen / Fachbereich Energietechnik