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Förster, Arnold
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Ohler, C.
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Moers, J.
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Fachbereich Energietechnik
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Strain dependence of the valence-band offset in arsenide compound heterojunctions determined by photoelectron spectroscopy / C. Ohler ; J. Moers ; A. Förster ...
(1993)
Förster, Arnold
;
Ohler, C.
;
Moers, J.
Strain dependence of the valence-band offset in InAs/GaAs heterojunctions determined by ultraviolet photoelectron spectroscopy / C. Ohler ; R. Kohleick ; A. Förster ...
(1994)
Förster, Arnold
;
Ohler, C.
;
Kohleick, R.
Band offsets at heavily strained III - V interfaces / C. Ohler ; A. Förster ; J. Moers...
(1997)
Förster, Arnold
;
Ohler, C.
;
Moers, J.
Barrier height at clean Au/InAs(100) interfaces / C. Ohler ; C. Daniels ; A. Förster ...
(1997)
Förster, Arnold
;
Ohler, C.
;
Daniels, C.
Heterojunction band offsets and Schottky-barrier heights: Tersoff’s theory in the presence of strain / C. Ohler ; C. Daniels ; A. Förster ...
(1998)
Förster, Arnold
;
Ohler, C.
;
Daniels, C.
1
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5