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Förster, Arnold
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Tillmann, K.
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Gerthsen, D.
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Pfundstein, P.
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Thust, M.
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Fachbereich Energietechnik
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INB - Institut für Nano- und Biotechnologien
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Morphological transformations of MBE-grown In0.6Ga0.4As island on GaAs(001) substrates / K. Tillmann ; D. Gerthsen ; P. Pfundstein ; A. Förster ...
(1995)
Förster, Arnold
;
Tillmann, K.
;
Gerthsen, D.
Critical dimensions for the formation of interfacial misfit dislocations of In0.6Ga0.4As islands on GaAs(001)
(2000)
Tillmann, K.
;
Förster, Arnold
Growth morphology and misfit relaxation of MBE-grown In0.6 G0.4 As on GaAs(001) / K. Tillmann ; D. Gerthsen ; A. Förster ...
(1995)
Förster, Arnold
;
Tillmann, K.
;
Gerthsen, D.
Structural transformations and strain relaxation mechanisms of In0.6Ga0.4As islands grown by molecular beam epitaxy on GaAs(001) substrates / Tillmann, K. ; Gerthsen, D. ; Pfundstein, P. ; Förster, A. ; Urban, K.
(1995)
Förster, Arnold
;
Tillmann, K.
;
Gerthsen, D.
;
Pfundstein, P.
Determination of segregation, elastic strain and thin-foil relaxation in InxGa-1-x As islands on GaAs(001) by high resolution transmission electron microscopy / K. Tillmann ; A. Thust ; M. Lentzen ... A. Förster ...
(1996)
Förster, Arnold
;
Tillmann, K.
;
Thust, M.
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