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Author
Arnold Förster
(8)
H. Lüth
(5)
K. M. Indlekofer
(4)
K.M. Indlekofer
(3)
A. E. Belyaev
(2)
J. Stock
(2)
M. Griebel
(2)
S. A. Vitusevich
(2)
B. A. Glavin
(1)
Hans Lüth
(1)
J. Malindretos
(1)
J. Wensorra
(1)
K.-M. Indlekofer
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Michael Pöttgens
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R. V. Konakova
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2005
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Fachbereich Energietechnik
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INB - Institut für Nano- und Biotechnologien
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Title
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Author
Transport properties of gated resonant tunneling diodes in the single electron regime. Griebel, M.; Indlekofer, K. M.; Förster, A.; Lüth, H.
(1998)
Arnold Förster
;
M. Griebel
;
K. M. Indlekofer
;
H. Lüth
A Vertical Resonant Tunneling Transistor for Application in Digital Logic Circuits
(2001)
J. Stock
;
J. Malindretos
;
K.M. Indlekofer
;
Michael Pöttgens
;
Arnold Förster
;
Hans Lüth
Perspectives of resonant tunneling diodes
(2002)
Arnold Förster
;
J. Stock
;
K. M. Indlekofer
Density-matrix description of a quantum dot system with variable lateral confinement in the single-electron tunneling regime. Indlekofer, K.M.; Förster, A.; Lüth, H.
(2002)
Arnold Förster
;
K.M. Indlekofer
;
H. Lüth
Tunneling Through X-Valley-Related Impurity States in GaAs/AlAs Resonant-Tunneling Diodes
(2000)
S. A. Vitusevich
;
Arnold Förster
;
K.-M. Indlekofer
;
H. Lüth
;
A. E. Belyaev
;
B. A. Glavin
;
R. V. Konakova
Resonant tunneling in nanocolumns improved by quantum collimation. Wensorra, J.; Indlekofer, K. M.; Förster, A.; Lüth, H.
(2005)
Arnold Förster
;
J. Wensorra
;
K. M. Indlekofer
;
H. Lüth
Single electron transport in resonant tunnelling diodes laterally confined by ion implantation. Griebel, M.; Indlekofer, K.M.; Förster, A.; Lüth, H.
(1999)
Arnold Förster
;
M. Griebel
;
K.M. Indlekofer
;
H. Lüth
Resonant tunneling effect in delta p-n GaAs junction. Vitusevich, S. A.; Förster, A.; Belyaev, A. E.; Indlekofer, K. M.; Lüth, H.; Konakova, R. V.
(1999)
Arnold Förster
;
S. A. Vitusevich
;
A. E. Belyaev
;
K. M. Indlekofer
1
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8