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Macroporous silicon has been etched from n-type Si, using a vertical etching cell where no rear side contact on the silicon wafer is necessary. The resulting macropores have been characterised by means of Scanning Electron Microscopy (SEM). After etching, SiO₂ was thermally grown on the top of the porous silicon as an insulating layer and Si₃N₄ was deposited by means of Low Pressure Chemical Vapour Deposition (LPCVD) as transducer material to fabricate a capacitive pH sensor. In order to prepare porous biosensors, the enzyme penicillinase has been additionally immobilised inside the porous structure. Electrochemical measurements of the pH sensor and the biosensor with an Electrolyte/Insulator/Semiconductor (EIS) structure have been performed in the Capacitance/Voltage (C/V) and Constant capacitance (ConCap) mode.
Side bands in ¹⁷² Hf
(1978)
Side bands in ¹⁷² Hf
(1977)
High-spin isomer in ¹³⁷ Ce
(1978)
Band structure in ¹⁹⁴ Au
(1979)
New isomers in ¹⁴² Sm
(1980)
Band structure in ¹⁹⁰,¹⁹² Au
(1978)
Side bands in ¹⁷² Hf
(1978)
Isomeric states in ¹³⁴ Ba
(1980)
Isomeric state in ¹³⁴ La
(1981)
Isomeric state in ¹³⁶ La
(1981)
New side-bands in ¹³⁴ Ce
(1981)
High-spin states in ¹³³ La
(1980)
Isomeric states in ¹³⁴ Ba
(1980)
New isomeric state in ¹⁴⁴ Eu
(1980)
Band structure in ¹⁹⁰,¹⁹² Au
(1978)
New isomers in ¹⁴² Sm
(1979)
New isomeric state in ¹⁴⁵ Eu
(1979)
In-beam study of ¹⁴⁵ Gd
(1979)
High-spin states in ¹⁸⁰ Os
(1979)
In-beam study of ¹⁴⁴ Gd
(1978)
High-spin states in ¹³³ La
(1982)
In-beam study of ¹⁴⁴ Gd
(1978)
In-beam study of ¹⁴⁴ Gd
(1977)