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This thesis introduces the Integrated Emitter Turn-Off (IETO) Thyristor as a new high-power device. Known state-of-the-art research activities like the Dual GCT, the ETO thyristor and the ICT were presented and critically reviewed. A comparison with commercialized solutions identifies the pros and cons of each type of device family. Based on this analysis, the IETO structure is proposed, covering most benefits of each device class. In particular the combination of a MOS-assisted turn-off with a thyristor-based device allows a voltage-controlled MOS switching and the low on-state voltage of the thyristors. The following synthesis of an IETO device stands on a three-dimensional field of optimization spanned by electric, mechanical and thermal aspects. From an electric point of view, the lowest possible parasitic inductance and resistance within the commutation path are optimization criteria. The mechanical construction has to withstand the required contact pressure of multiple kilo Newtons. Finally, thermal borders limit the maximum average current of the device. FEM simulations covering these three aspects are performed for several design proposals. An IETO prototype is constructed and measurements on various test benches attest thermal, mechanical and electric performance. A local decoupling of the external driver stage and the presspack housing is presented by a cable connection. This separation enables a thermal and mechanical independence, which is advantageous in terms of vibrations and thermal cycles including increased reliability. The electric pulse performance of the prototype device is a factor of 3.1 above today''s solutions. In single-pulse measurements, a current up to 1600 A was successfully turned off at 115°C with an active silicon area of 823 mm². One reason for this increased turn-off capability is the extremely low-inductive construction. Additional functionality of the IETO thyristor like over-current self-protection and defined short-circuit failure state are successfully verified.
The inverse scattering problem for a conductive boundary condition and transmission eigenvalues
(2018)
In this paper, we consider the inverse scattering problem associated with an inhomogeneous media with a conductive boundary. In particular, we are interested in two problems that arise from this inverse problem: the inverse conductivity problem and the corresponding interior transmission eigenvalue problem. The inverse conductivity problem is to recover the conductive boundary parameter from the measured scattering data. We prove that the measured scatted data uniquely determine the conductivity parameter as well as describe a direct algorithm to recover the conductivity. The interior transmission eigenvalue problem is an eigenvalue problem associated with the inverse scattering of such materials. We investigate the convergence of the eigenvalues as the conductivity parameter tends to zero as well as prove existence and discreteness for the case of an absorbing media. Lastly, several numerical and analytical results support the theory and we show that the inside–outside duality method can be used to reconstruct the interior conductive eigenvalues.
The Inverted Rotary Pendulum: Facilitating Practical Teaching in Advanced Control Engineering
(2024)
This paper outlines a practical approach to teach control engineering principles, with an inverted rotary pendulum, serving as an illustrative example. It shows how the pendulum is embedded in an advanced course of control engineering. This approach is incorporated into a flipped-classroom concept, as well as classical teaching concepts, offering students practical experience in control engineering. In addition, the design of the pendulum is shown, using a Raspberry Pi as the target platform for Matlab Simulink. This pendulum can be used in the classroom to evaluate the controller design mentioned above. It is analysed if the use of the pendulum generates a deeper understanding of the learning contents.