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Thickness dependence of the electronic structure of ultrathin, epitaxial Ni(111)/W(110) layers.
(1988)
Semi-insulating GaAs layers grown by molecular-beam epitaxy / P. Kordos ; A. Förster ; J. Betko ...
(1995)
Evaluation of dopant profiles and diffusion constants by means of electron energy loss spectroscopy
(1989)
Investigation of the InSb(110)-Sn schottky barrier by means of electron energy loss spectroscopy
(1987)
Arsenic passivation of MOMBE grown GaAs surfaces / B. -J. Schäfer ; A. Förster ; M. Londschien ...
(1988)
The adsorption of fluor-carbon complexes on GaAs(110) studied by electron energy loss spectroscopy
(1986)