Transport properties of gated resonant tunneling diodes in the single electron regime. Griebel, M.; Indlekofer, K. M.; Förster, A.; Lüth, H.
Author: | Arnold Förster, M. Griebel, K. M. Indlekofer, H. Lüth |
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ISBN: | 1089-7550 |
Parent Title (English): | Journal of Applied Physics. 84 (1998), H. 12 |
Document Type: | Article |
Language: | English |
Year of Completion: | 1998 |
First Page: | 6719 |
Last Page: | 6724 |
Link: | http://dx.doi.org/10.1063/1.368998 |
Zugriffsart: | campus |
Institutes: | FH Aachen / Fachbereich Energietechnik |