A major design step in IETO concept realization that allows overcurrent protection and pushes limits of switching performance
- This paper presents the latest prototype of the integrated emitter turn-off thyristor concept, which potentially ranks among thyristor high-power devices like the gate turn-off thyristor and the integrated gate-commutated thyristor (IGCT). Due to modifications of the external driver stage and mechanical press-pack design optimization, this prototype allows for full device characterization. The turn-off capability was increased to 1600 A with an active silicon area of 823mm2 . This leads to a transient peak power of 672.1kW/cm² . Within this paper, measurements and concept assessment are presented and a comparison to state-of-the-art IGCT devices is provided.
Author: | Michael Bragard, H. van Hoek, R. W. De Doncker |
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DOI: | https://doi.org/10.1109/TPEL.2012.2189136 |
ISSN: | 0885-8993 |
Parent Title (English): | IEEE transactions on power electronics |
Publisher: | IEEE |
Place of publication: | New York |
Document Type: | Article |
Language: | English |
Year of Completion: | 2012 |
Volume: | 27 |
Issue: | 9 |
First Page: | 4163 |
Last Page: | 4171 |
Link: | https://doi.org/10.1109/TPEL.2012.2189136 |
Zugriffsart: | campus |
Institutes: | FH Aachen / Fachbereich Elektrotechnik und Informationstechnik |
collections: | Verlag / IEEE |