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Proceedings of the 2nd Humboldt Kolleg, Hammamet, Tunisia Organizer: Alexander von Humboldt Stiftung, Germany. pdf 184 p. Welcome Address Dear Participants, Welcome to the 2nd Humboldt Kolleg in “Nanoscale Science and Technology” (NS&T’12) in Tunisia, sponsored by the "Alexander von Humboldt" foundation. The NS&T’12 multidisciplinary scientific program includes seven "hot" topics dealing with "Nanoscale Science and Technology" covering basic and application-oriented research as well as industrial (market) aspects: - Molecular Biophyics, Spectroscopy Techniques, Imaging Microscopy - Nanomaterials Synthesis for Medicine and Bio-chemical Sensors - Nanostructures, Semiconductors, Photonics and Nanodevices - New Technologies in Market Industry - Environment, Electro-chemistry, Bio-polymers and Fuel Cells - Nanomaterials, Photovoltaic, Modelling, Quantum Physics - Microelectronics, Sensors Networks and Embedded Systems We are deeply indebted to all members of the Scientific Committee and General Chairs for joint Sessions and to all speakers and chairmen, who have dedicated invaluable time and efforts for the realization of this event. On behalf of the Organizing Committee, we are cordially inviting you to join the conference and hope that your stay will be fruitful, rewarding and enjoyable. Prof. Dr. Michael J. Schöning, Prof. Dr. Adnane Abdelghani
Doktoranden der FH Aachen stellen ihre wissenschaftlichen Arbeiten aus verschiedenen Fachdisziplinen vor.
Functional testing and characterisation of ISFETs on wafer level by means of a micro-droplet cell
(2006)
A wafer-level functionality testing and characterisation system for ISFETs (ionsensitive field-effect transistor) is realised by means of integration of a specifically designed capillary electrochemical micro-droplet cell into a commercial wafer prober-station. The developed system allows the identification and selection of “good” ISFETs at the earliest stage and to avoid expensive bonding, encapsulation and packaging processes for nonfunctioning ISFETs and thus, to decrease costs, which are wasted for bad dies. The developed system is also feasible for wafer-level characterisation of ISFETs in terms of sensitivity, hysteresis and response time. Additionally, the system might be also utilised for wafer-level testing of further electrochemical sensors.