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An array of 50 MHz quartz microbalances (QMBs) coated with a dendronized polymer was used to detect small amounts of volatile organic compounds (VOCs) in the gas phase. The results were compared to those obtained with the commonly used 10 MHz QMBs. The 50 MHz QMBs proved to be a powerful tool for the detection of VOCs in the gas phase; therefore, they represent a promising alternative to the much more delicate surface acoustic wave devices (SAWs).
Table of Contents Introduction 1. Generative Manufacturing Processes 2. Classification of Generative Manufacturing Processes 3. Application of Generative Processes on the Fabrication of Ceramic Parts 3.1 Extrusion 3.2 3D-Printing 3.3 Sintering – Laser Sintering 3.4 Layer-Laminate Processes 3.5 Stereolithography (sometimes written: Stereo Lithography) 4. Layer Milling 5. Conclusion - Vision
We report on the synthesis and CO gas-sensing properties of mesoporous tin(IV) oxides (SnO2). For the synthesis cetyltrimethylammonium bromide (CTABr) was used as a structure-directing agent; the resulting SnO2 powders were applied as films to commercially available sensor substrates by drop coating. Nitrogen physisorption shows specific surface areas up to 160 m2·g-1 and mean pore diameters of about 4 nm, as verified by TEM. The film conductance was measured in dependence on the CO concentration in humid synthetic air at a constant temperature of 300 °C. The sensors show a high sensitivity at low CO concentrations and turn out to be largely insensitive towards changes in the relative humidity. We compare the materials with commercially available SnO2-based sensors.
Functional testing and characterisation of ISFETs on wafer level by means of a micro-droplet cell
(2006)
A wafer-level functionality testing and characterisation system for ISFETs (ionsensitive field-effect transistor) is realised by means of integration of a specifically designed capillary electrochemical micro-droplet cell into a commercial wafer prober-station. The developed system allows the identification and selection of “good” ISFETs at the earliest stage and to avoid expensive bonding, encapsulation and packaging processes for nonfunctioning ISFETs and thus, to decrease costs, which are wasted for bad dies. The developed system is also feasible for wafer-level characterisation of ISFETs in terms of sensitivity, hysteresis and response time. Additionally, the system might be also utilised for wafer-level testing of further electrochemical sensors.