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H. Lüth (118)
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2005
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(108)
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Fachbereich Medizintechnik und Technomathematik
(92)
INB - Institut für Nano- und Biotechnologien
(62)
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118
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Ga segregation and the effect of Si and Ge interlayers at the GaAs(100)/AlAs heterostructure / R. Kohleick ; A. Förster ; H. Lüth
(1993)
Arnold Förster
;
R. Kohleick
;
H. Lüth
Density-matrix description of a quantum dot system with variable lateral confinement in the single-electron tunneling regime. Indlekofer, K.M.; Förster, A.; Lüth, H.
(2002)
Arnold Förster
;
K.M. Indlekofer
;
H. Lüth
Transport through a buried double barrier single electron transistor at low temperatures
(1998)
Arnold Förster
;
M. Griebel
;
M. Indlekofer
;
H. Lüth
Single electron transport in resonant tunnelling diodes laterally confined by ion implantation. Griebel, M.; Indlekofer, K.M.; Förster, A.; Lüth, H.
(1999)
Arnold Förster
;
M. Griebel
;
K.M. Indlekofer
;
H. Lüth
Transport properties of gated resonant tunneling diodes in the single electron regime. Griebel, M.; Indlekofer, K. M.; Förster, A.; Lüth, H.
(1998)
Arnold Förster
;
M. Griebel
;
K. M. Indlekofer
;
H. Lüth
Optimization of passivation layers for corrosion protection of silicon-based microelectrode arrays
(2000)
F. Faßbender
;
G. Schmitt
;
Michael Josef Schöning
;
H. Lüth
;
G. Buß
;
J. W. Schultze
Passivation and corrosion of microsensor devices exemplified at microelectrode arrays
(1999)
F. Faßbender
;
G. Schmitt
;
Michael Josef Schöning
;
H. Lüth
;
G. Buß
;
J. W. Schultze
Galvanic modifications of multifunctional silicon-based microelectrode arrays
(2000)
G. Buß
;
H. Ecken
;
S. Winkels
;
Michael Josef Schöning
;
H. Lüth
;
J. W. Schultze
111
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118