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F. Schäffer (1)
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Fachbereich Energietechnik
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INB - Institut für Nano- und Biotechnologien
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Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range
(2000)
J. Darmo
;
F. Schäffer
;
Arnold Förster
;
P. Kordos
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