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Arnold Förster (143)
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English (143)
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Fachbereich Energietechnik
(142)
INB - Institut für Nano- und Biotechnologien
(24)
Fachbereich Chemie und Biotechnologie
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Fachbereich Medizintechnik und Technomathematik
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143
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140
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Title
Title
Author
Author
AlAs/GaAs Quantum well structures: Interface properties investigated by high-resolution transmission electron microscopy and photoluminescence spectroscopy / T. Walther ; D. Gerthsen ; R. Carius ; A. Förster ...
(1993)
T. Walther
;
D. Gerthsen
;
Reinhard Carius
;
Arnold Förster
Modulated ellipsometric measurements and transfer-matrix calculation of the field-dependent dielectric function of a multiple quantum well / J.-Th. Zettler ; H. Mikkelsen ; K. Leo ... A. Förster
(1992)
Arnold Förster
;
J.-T. Zettler
;
H. Mikkelsen
;
K. Leo
Growth mode and strain relaxation during the initial stage of InxGa1–xAs growth on GaAs(001) / M. Lentzen ; D. Gerthsen ; A. Förster ...
(1992)
Arnold Förster
;
M. Lentzen
;
D. Gerthsen
Arsenic passivation of MBE grown GaAs(100): structural and electronic properties of the decapped surfaces / U. Resch ; N. Essera ; Y. S. Raptis ... A. Förster ...
(1992)
Arnold Förster
;
U. Resch
;
N. Essera
;
Y. S. Raptis
High quality GaAs-based resonant tunneling diodes for high frequency device applications / H. Brugger ; U. Meiners ; C. Wölk ... A. Förster ...
(1991)
Arnold Förster
;
H. Brugger
;
U. Meiners
Epitaxial growth and characterization of Si/NiSi2/Si(111) heterostructures / Angela Rizzi ; A. Förster ; H. Lüth
(1989)
Arnold Förster
;
Angela Rizzi
;
H. Lüth
Evaluation of dopant profiles and diffusion constants by means of electron energy loss spectroscopy
(1989)
Arnold Förster
;
J. M. Layet
;
H. Lüth
Surface reactions of trimethylgallium and trimethylarsenic on silicon surfaces
(1989)
Arnold Förster
;
H. Lüth
The effect of inhomogeneous dopant profiles on the electron energy loss spectra of Si(100) /
(1988)
Arnold Förster
;
J. M. Layet
;
H. Lüth
Arsenic passivation of MOMBE grown GaAs surfaces / B. -J. Schäfer ; A. Förster ; M. Londschien ...
(1988)
Arnold Förster
;
B.-J. Schäfer
;
M. Londschien
131
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140