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Arnold Förster
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GaAs hot electron injector
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microwave generation
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Fachbereich Energietechnik
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INB - Institut für Nano- und Biotechnologien
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147
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Title
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Author
The Schottky barrier at the InSb(110)–Sn interface
(1987)
Arnold Förster
;
A. Tulke
;
H. Lüth
Surface reactions of trimethylgallium and trimethylarsenic on silicon surfaces
(1989)
Arnold Förster
;
H. Lüth
Effect of interface roughness and scattering on the performance of AlAs/InGaAs resonant tunneling diodes
(1993)
Arnold Förster
;
J. Lange
;
D. Gerthsen
Strain dependence of the valence-band offset in arsenide compound heterojunctions determined by photoelectron spectroscopy / C. Ohler ; J. Moers ; A. Förster ...
(1993)
Arnold Förster
;
C. Ohler
;
J. Moers
The adsorption of fluor-carbon complexes on GaAs(110) studied by electron energy loss spectroscopy
(1986)
Arnold Förster
;
A. Spitzer
;
H. Lüth
Investigation of the InSb(110)-Sn schottky barrier by means of electron energy loss spectroscopy
(1987)
Arnold Förster
;
H. Lüth
Optimization of III/V binary growth with RHEED in MOMBE / C. Ungermanns ; M. v. d. Ahe ; R. Carius ; A. Förster ...
(1997)
C. Ungermanns
;
M. v. d. Ahe
;
Reinhard Carius
;
Arnold Förster
Pixel X-ray detectors in epitaxial gallium arsenide withhigh-energy resolution capabilities (Fano factor experimentaldetermination) / G. Bertuccio ; A. Pullia ; J. Lauter ; A. Förster ...
(1997)
Arnold Förster
;
G. Bertuccio
;
A. Pullia
On the hopping and band conductivity in molecular-beam epitaxial low-temperature grown GaAs / M. Morvic ; J. Betko ; J. Novák ... A. Förster
(1998)
Arnold Förster
;
M. Morvic
;
J. Betko
High quality GaAs-based resonant tunneling diodes for high frequency device applications / H. Brugger ; U. Meiners ; C. Wölk ... A. Förster ...
(1991)
Arnold Förster
;
H. Brugger
;
U. Meiners
101
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110