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P. Kordos (54)
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Deep-level states and electrical properties of GaAs grown at 250 °C / J. Darmo ; F. Dubecký ; P. Kordos ; A. Förster ...
(1994)
Arnold Förster
;
J. Darmo
;
F. Dubecký
;
P. Kordos
Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs. Darmo, J.; Dubecky, F.; Kordos, P.; Förster, A.
(1998)
Arnold Förster
;
J. Darmo
;
F. Dubecky
;
P. Kordos
Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature / J. Betko ; P. Kordos ; S. Kuklovsky ; A. Förster ...
(1994)
Arnold Förster
;
J. Betko
;
P. Kordos
;
S. Kuklovsky
Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range
(2000)
J. Darmo
;
F. Schäffer
;
Arnold Förster
;
P. Kordos
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54