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Förster, Arnold
(146)
Lüth, H.
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Annealing characteristics of native defects in low-temperature-grown MBE GaAs / J. Darmo ; F. Dubecky ; P. Kordos ; A. Förster
(1996)
Förster, Arnold
;
Darmo, J.
;
Dubecký, F.
;
Kordos, P.
Critical dimensions for the formation of interfacial misfit dislocations of In0.6Ga0.4As islands on GaAs(001)
(2000)
Tillmann, K.
;
Förster, Arnold
Spectral Responsivity of single-quantum-well photodetectors
(2000)
Vitusevich, S. A.
;
Förster, Arnold
;
Reetz, W.
;
Lüth, H.
;
Belyaev, A. E.
;
Danylyuk, S. V.
Atomic scale analysis of the indium distribution in InGaAs/GaAs (001) heterostructures: segregation, lateral indium redistribution and the effect of growth interruptions. Rosenauer, A. ; Oberst, W. ; Gerthsen, D. ; Förster, A.
(1999)
Förster, Arnold
;
Rosenauer, A.
;
Oberst, W.
;
Gerthsen, D.
Mode-Discriminating Photoconductor and Coplanar Wave-Guide Circuits for Picosecond Sampling. Zamdmer, N.; Hu, Qing ; Verghese, S. ; Förster, A.
(1999)
Förster, Arnold
;
Zamdmer, N.
;
Hu, Qing
;
Verghese, S.
Tunneling Through X-Valley-Related Impurity States in GaAs/AlAs Resonant-Tunneling Diodes
(2000)
Vitusevich, S. A.
;
Förster, Arnold
;
Indlekofer, K.-M.
;
Lüth, H.
;
Belyaev, A. E.
;
Glavin, B. A.
;
Konakova, R. V.
Layer Deposition I
(2003)
Förster, Arnold
Nonlinear charging effect of quantum dots in a p-i-n diode. Kiesslich, G.; Wacker, A.; Scholl, E.; Vitusevich, S.A.; Belyaev, A.E.; Danylyuk, S.V.; Forster, A.; Klein, N.; Henini, M.
(2003)
Förster, Arnold
;
Kiesslich, G.
;
Wacker, A.
;
Scholl, E.
Perspectives of resonant tunneling diodes
(2002)
Förster, Arnold
;
Stock, J.
;
Indlekofer, K. M.
Density-matrix description of a quantum dot system with variable lateral confinement in the single-electron tunneling regime. Indlekofer, K.M.; Förster, A.; Lüth, H.
(2002)
Förster, Arnold
;
Indlekofer, K.M.
;
Lüth, H.
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