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Förster, Arnold
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INB - Institut für Nano- und Biotechnologien
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GaAs hot electron injector
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Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs / P. Kordos ; M. Marso, ; A. Förster ...
(1997)
Förster, Arnold
;
Kordos, P.
;
Marso, M.
Composition evaluation of InxGa1 – xAs Stranski-Krastanow-island structures by strain state analysis / A. Rosenauer ; U. Fischer ; D. Gerthsen ; A. Förster
(1997)
Förster, Arnold
;
Rosenauer, A.
;
Fischer, U.
;
Gerthsen, D.
The effect of growth temperature on AlAs/GaAs resonant tunnelling diodes
(1994)
Förster, Arnold
;
Lange, J.
;
Gerthsen, D.
Band offsets at heavily strained III - V interfaces / C. Ohler ; A. Förster ; J. Moers...
(1997)
Förster, Arnold
;
Ohler, C.
;
Moers, J.
Reflection and transmission of ballistic electrons at a potential barrier / Schäpers, T. ; Müller, F. ; Förster, A. ; Lengeler, B. ; Lüth, H.
(1993)
Förster, Arnold
;
Schäpers, T.
;
Müller, F.
;
Lengeler, B.
Epitaxial growth and characterization of Si/NiSi2/Si(111) heterostructures / Angela Rizzi ; A. Förster ; H. Lüth
(1989)
Förster, Arnold
;
Rizzi, Angela
;
Lüth, H.
Arsenic passivation of MBE grown GaAs(100): structural and electronic properties of the decapped surfaces / U. Resch ; N. Essera ; Y. S. Raptis ... A. Förster ...
(1992)
Förster, Arnold
;
Resch, U.
;
Essera, N.
;
Raptis, Y. S.
Control of ballistic electrons in (AlGa)As/GaAs heterostructures by means of superconducting niobium gate structures / T. Schäpers ; F. Müller ; A. Förster ...
(1994)
Förster, Arnold
;
Schäpers, T.
;
Müller, F.
Evaluation of dopant profiles and diffusion constants by means of electron energy loss spectroscopy
(1989)
Förster, Arnold
;
Layet, J. M.
;
Lüth, H.
Thermal desorption of amorphous arsenic caps from GaAs(100) monitored by reflection anisotropy spectroscopy / U. Resch ; S. M. Scholz ; U. Rossow ... A. Förter ...
(1993)
Förster, Arnold
;
Resch, U.
;
Scholz, S. M.
111
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120