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Förster, Arnold
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Lüth, H.
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Transport properties of gated resonant tunneling diodes in the single electron regime. Griebel, M.; Indlekofer, K. M.; Förster, A.; Lüth, H.
(1998)
Förster, Arnold
;
Griebel, M.
;
Indlekofer, K. M.
;
Lüth, H.
Single electron transport in resonant tunnelling diodes laterally confined by ion implantation. Griebel, M.; Indlekofer, K.M.; Förster, A.; Lüth, H.
(1999)
Förster, Arnold
;
Griebel, M.
;
Indlekofer, K.M.
;
Lüth, H.
Transport through a buried double barrier single electron transistor at low temperatures
(1998)
Förster, Arnold
;
Griebel, M.
;
Indlekofer, M.
;
Lüth, H.
Density-matrix description of a quantum dot system with variable lateral confinement in the single-electron tunneling regime. Indlekofer, K.M.; Förster, A.; Lüth, H.
(2002)
Förster, Arnold
;
Indlekofer, K.M.
;
Lüth, H.
Ga segregation and the effect of Si and Ge interlayers at the GaAs(100)/AlAs heterostructure / R. Kohleick ; A. Förster ; H. Lüth
(1993)
Förster, Arnold
;
Kohleick, R.
;
Lüth, H.
AlGaAs/GaAs avalanche detector array -1 GBit/s X-ray receiver for timing measurements / J. Lauter ; A. Förster ; H. Lüth ...
(1996)
Förster, Arnold
;
Lauter, J.
;
Lüth, H.
AlGaAs/GaAs avalanche detector array-1 GBit/s X-ray receiver fortiming measurements / J. Lauter ; A. Förster ; H. Lüth ...
(1996)
Förster, Arnold
;
Lauter, J.
;
Lüth, H.
AlGaAs/GaAs SAM-avalanche photodiode : an X-ray detector for low energy photons / J. Lauter ; D. Protic ; A. Förster ; H. Lüth
(1995)
Förster, Arnold
;
Lauter, J.
;
Protic, D.
;
Lüth, H.
The effect of inhomogeneous dopant profiles on the electron energy loss spectra of Si(100) /
(1988)
Förster, Arnold
;
Layet, J. M.
;
Lüth, H.
Evaluation of dopant profiles and diffusion constants by means of electron energy loss spectroscopy
(1989)
Förster, Arnold
;
Layet, J. M.
;
Lüth, H.
1
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10