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Förster, Arnold
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Lüth, H.
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Author
A novel InAlAs/InGaAs layer structure for monolithically integrated photoreceiver
(2000)
Hodel, U.
;
Orzati, A.
;
Marso, M.
;
Homann, O.
;
Fox, A.
;
Hart, A. v. d.
;
Förster, Arnold
;
Kordos, P.
;
Lüth, H.
AlGaAs/GaAs avalanche detector array -1 GBit/s X-ray receiver for timing measurements / J. Lauter ; A. Förster ; H. Lüth ...
(1996)
Förster, Arnold
;
Lauter, J.
;
Lüth, H.
AlGaAs/GaAs avalanche detector array-1 GBit/s X-ray receiver fortiming measurements / J. Lauter ; A. Förster ; H. Lüth ...
(1996)
Förster, Arnold
;
Lauter, J.
;
Lüth, H.
AlGaAs/GaAs SAM-avalanche photodiode : an X-ray detector for low energy photons / J. Lauter ; D. Protic ; A. Förster ; H. Lüth
(1995)
Förster, Arnold
;
Lauter, J.
;
Protic, D.
;
Lüth, H.
Density-matrix description of a quantum dot system with variable lateral confinement in the single-electron tunneling regime. Indlekofer, K.M.; Förster, A.; Lüth, H.
(2002)
Förster, Arnold
;
Indlekofer, K.M.
;
Lüth, H.
DX centres, conduction band offsets and Si-dopant segregation in heterostructures / A. Leuther ; A. Förster ; H. Lüth ...
(1996)
Förster, Arnold
;
Leuther, A.
;
Lüth, H.
Epitaxial growth and characterization of Si/NiSi2/Si(111) heterostructures / Angela Rizzi ; A. Förster ; H. Lüth
(1989)
Förster, Arnold
;
Rizzi, Angela
;
Lüth, H.
Evaluation of dopant profiles and diffusion constants by means of electron energy loss spectroscopy
(1989)
Förster, Arnold
;
Layet, J. M.
;
Lüth, H.
Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode
(2000)
Vitusevich, S. A.
;
Förster, Arnold
;
Reetz, W.
;
Lüth, H.
;
Belyaev, A. E.
;
Danylyuk, S. V.
Ga segregation and the effect of Si and Ge interlayers at the GaAs(100)/AlAs heterostructure / R. Kohleick ; A. Förster ; H. Lüth
(1993)
Förster, Arnold
;
Kohleick, R.
;
Lüth, H.
1
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10