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Lüth, H.
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Schöning, Michael Josef
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Transport properties of gated resonant tunneling diodes in the single electron regime. Griebel, M.; Indlekofer, K. M.; Förster, A.; Lüth, H.
(1998)
Förster, Arnold
;
Griebel, M.
;
Indlekofer, K. M.
;
Lüth, H.
Transport through a buried double barrier single electron transistor at low temperatures
(1998)
Förster, Arnold
;
Griebel, M.
;
Indlekofer, M.
;
Lüth, H.
Tunneling Through X-Valley-Related Impurity States in GaAs/AlAs Resonant-Tunneling Diodes
(2000)
Vitusevich, S. A.
;
Förster, Arnold
;
Indlekofer, K.-M.
;
Lüth, H.
;
Belyaev, A. E.
;
Glavin, B. A.
;
Konakova, R. V.
Ultrafast low-temperature-grown epitaxial GaAs photodetectors transferred on flexible plastic substrates
(2005)
Mikulics, M.
;
Adam, R.
;
Kordos, P.
;
Förster, Arnold
;
Lüth, H.
;
Wu, S.
;
Zheng, X.
;
Sobolewski, R.
Voltohmmetrie an polykristallinen Goldelektroden
(2000)
Hüllenkremer, B.
;
Glück, O.
;
Emons, H.
;
Lüth, H.
;
Schöning, Michael Josef
Voltohmmetry – a novel sensing principle for heavy metal determination in aqueous solutions
(2001)
Schöning, Michael Josef
;
Hüllenkremer, B.
;
Glück, O.
;
Lüth, H.
;
Emons, H.
„High order“ hybrid sensor module based on an identical transducer principle
(2001)
Poghossian, Arshak
;
Berndsen, L.
;
Schultze, J. W.
;
Lüth, H.
;
Schöning, Michael Josef
113
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119