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Author
Förster, Arnold
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Lüth, H.
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Belyaev, A. E.
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Danylyuk, S. V.
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Author
The effect of inhomogeneous dopant profiles on the electron energy loss spectra of Si(100) /
(1988)
Förster, Arnold
;
Layet, J. M.
;
Lüth, H.
The Schottky barrier at the InSb(110)–Sn interface
(1987)
Förster, Arnold
;
Tulke, A.
;
Lüth, H.
Transport properties of gated resonant tunneling diodes in the single electron regime. Griebel, M.; Indlekofer, K. M.; Förster, A.; Lüth, H.
(1998)
Förster, Arnold
;
Griebel, M.
;
Indlekofer, K. M.
;
Lüth, H.
Transport through a buried double barrier single electron transistor at low temperatures
(1998)
Förster, Arnold
;
Griebel, M.
;
Indlekofer, M.
;
Lüth, H.
Tunneling Through X-Valley-Related Impurity States in GaAs/AlAs Resonant-Tunneling Diodes
(2000)
Vitusevich, S. A.
;
Förster, Arnold
;
Indlekofer, K.-M.
;
Lüth, H.
;
Belyaev, A. E.
;
Glavin, B. A.
;
Konakova, R. V.
Ultrafast low-temperature-grown epitaxial GaAs photodetectors transferred on flexible plastic substrates
(2005)
Mikulics, M.
;
Adam, R.
;
Kordos, P.
;
Förster, Arnold
;
Lüth, H.
;
Wu, S.
;
Zheng, X.
;
Sobolewski, R.
21
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26