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Hagemann, Hans-Jürgen
(38)
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The valence change of Fe in BaTiO3 studied by Mößbauer effect and gravimetry. Hagemann, H. J.; Hero, A.; Gonser, U.
(1980)
Hagemann, Hans-Jürgen
;
Hero, A.
;
Gonser, U.
Reversible Weight change of acceptor-doped BaTiO3. Hagemann, H. J.; Hennings, D.
(1981)
Hagemann, Hans-Jürgen
;
Hennings, D.
Ceramic multilayer capacitors. Hagemann, H. J.; Hennings, D.; Wernicke, R.
(1984)
Hagemann, Hans-Jürgen
;
Hennings, D.
;
Wernicke, R.
Keramische Vielschichtkondensatoren. Hagemann, H. J.; Hennings, D.; Wernicke, R.
(1984)
Hagemann, Hans-Jürgen
;
Hennings, D.
;
Wernicke, R.
The influence of contact effects on the dielectric behavior of diffuse phase transitions. Stumpe, R.; Wagner, D.; Bäuerle, D.; Hagemann, H. J.
(1985)
Hagemann, Hans-Jürgen
;
Stumpe, R.
;
Wagner, D.
;
Bäuerle, D.
Reduction of geometric taper losses in the PCVD process. Geittner, P.; Hagemann, H. J.; Warnier, J.; Weling, F.; Wilson, H.
(1985)
Hagemann, Hans-Jürgen
;
Geittner, P.
;
Warnier, J.
;
Weling, F.
Intrinsic scattering and absorption losses of Ge- and F-doped optical fibres prepared by PCVD. Geittner, P.; Hagemann, H. J. ; Leers, D.
(1989)
Hagemann, Hans-Jürgen
;
Geittner, P.
;
Leers, D.
PCVD at high deposition rates. Geittner, P.; Hagemann, H. J.; Warnier, J.; Wilson, H.
(1986)
Hagemann, Hans-Jürgen
;
Geittner, P.
;
Warnier, J.
;
Wilson, H.
31
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38