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Förster, Arnold
(9)
Lüth, H.
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Indlekofer, K. M.
(4)
Griebel, M.
(3)
Indlekofer, K.M.
(3)
Belyaev, A. E.
(2)
Stock, J.
(2)
Vitusevich, S. A.
(2)
Glavin, B. A.
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Indlekofer, K.-M.
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Indlekofer, M.
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Konakova, R. V.
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Fachbereich Energietechnik
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Transport through a buried double barrier single electron transistor at low temperatures
(1998)
Förster, Arnold
;
Griebel, M.
;
Indlekofer, M.
;
Lüth, H.
Transport properties of gated resonant tunneling diodes in the single electron regime. Griebel, M.; Indlekofer, K. M.; Förster, A.; Lüth, H.
(1998)
Förster, Arnold
;
Griebel, M.
;
Indlekofer, K. M.
;
Lüth, H.
Single electron transport in resonant tunnelling diodes laterally confined by ion implantation. Griebel, M.; Indlekofer, K.M.; Förster, A.; Lüth, H.
(1999)
Förster, Arnold
;
Griebel, M.
;
Indlekofer, K.M.
;
Lüth, H.
Perspectives of resonant tunneling diodes
(2002)
Förster, Arnold
;
Stock, J.
;
Indlekofer, K. M.
Resonant tunneling in nanocolumns improved by quantum collimation. Wensorra, J.; Indlekofer, K. M.; Förster, A.; Lüth, H.
(2005)
Förster, Arnold
;
Wensorra, J.
;
Indlekofer, K. M.
;
Lüth, H.
Resonant tunneling effect in delta p-n GaAs junction. Vitusevich, S. A.; Förster, A.; Belyaev, A. E.; Indlekofer, K. M.; Lüth, H.; Konakova, R. V.
(1999)
Förster, Arnold
;
Vitusevich, S. A.
;
Belyaev, A. E.
;
Indlekofer, K. M.
Tunneling Through X-Valley-Related Impurity States in GaAs/AlAs Resonant-Tunneling Diodes
(2000)
Vitusevich, S. A.
;
Förster, Arnold
;
Indlekofer, K.-M.
;
Lüth, H.
;
Belyaev, A. E.
;
Glavin, B. A.
;
Konakova, R. V.
Density-matrix description of a quantum dot system with variable lateral confinement in the single-electron tunneling regime. Indlekofer, K.M.; Förster, A.; Lüth, H.
(2002)
Förster, Arnold
;
Indlekofer, K.M.
;
Lüth, H.
A Vertical Resonant Tunneling Transistor for Application in Digital Logic Circuits
(2001)
Stock, J.
;
Malindretos, J.
;
Indlekofer, K.M.
;
Pöttgens, Michael
;
Förster, Arnold
;
Lüth, Hans
1
to
9