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Förster, Arnold
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Lüth, H.
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Imaging the local density of states in a disordered semiconductor / T. Schmidt ; R. J. Haug ; V. I. Fal'ko ... A. Förster ...
(1996)
Förster, Arnold
;
Schmidt, T.
;
Haug, R. J.
Spectroscopy of local density of states fluctuations in a disordered conductor / T. Schmidt ; R. J. Haug ; V. I. Fal'ko ... A. Förster ...
(1996)
Förster, Arnold
;
Schmidt, T.
;
Haug, R. J.
AlGaAs/GaAs avalanche detector array-1 GBit/s X-ray receiver fortiming measurements / J. Lauter ; A. Förster ; H. Lüth ...
(1996)
Förster, Arnold
;
Lauter, J.
;
Lüth, H.
Spectroscopy of the single-particle states of a quantum-dot molecule / T. Schmidt ; R. J. Haug ; K. v. Klitzing ; A. Förster ...
(1997)
Förster, Arnold
;
Schmidt, T.
;
Haug, R. J.
Observation of the local structure of landau bands in a disordered conductor / T. Schmidt ; R. J. Haug ; Vladimir I. Fal'ko ... A. Förster ...
(1997)
Förster, Arnold
;
Schmidt, T.
;
Haug, R. J.
DX Centers in Al0.3Ga0.7As/GaAs Analyzed by Point Contact Measurements. Hauke, M.; Jakumeit, J.; Krafft, B.; Nimtz, G.; Förster, A.; Lüth, H.
(1998)
Förster, Arnold
;
Hauke, M.
;
Jakumeit, J.
;
Krafft, B.
Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs. Darmo, J.; Dubecky, F.; Kordos, P.; Förster, A.
(1998)
Förster, Arnold
;
Darmo, J.
;
Dubecky, F.
;
Kordos, P.
Deep-level states and electrical properties of GaAs grown at 250 °C / J. Darmo ; F. Dubecký ; P. Kordos ; A. Förster ...
(1994)
Förster, Arnold
;
Darmo, J.
;
Dubecký, F.
;
Kordos, P.
Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature / J. Betko ; P. Kordos ; S. Kuklovsky ; A. Förster ...
(1994)
Förster, Arnold
;
Betko, J.
;
Kordos, P.
;
Kuklovsky, S.
Characterization of low-temperature GaAs by galvanomagnetic an photoluminescence measurements / J. Novák ; M. Kucera ; M. Morvic ... A. Förster ...
(1997)
Förster, Arnold
;
Novak, J.
;
Kucera, M.
;
Morvic, M.
21
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30